Publikačná činnosť

Nádaždy, Peter

• GUCMANN, Filip – ŤAPAJNA, Milan – HUŠEKOVÁ, Kristína – DOBROČKA, Edmund – ROSOVÁ, Alica – NÁDAŽDY, Peter – ELIÁŠ, Peter – EGYENES, Fridrich – HRUBIŠÁK, Fedor – CHOUHAN, Hemendra – KESHTKAR, Javad – ZHENG, X – POMEROY, J.W. – KUBALL, M. – XIAO, Xiaoyi – MAO, Y. – MENG, Baozhong – MA, Guozhong – YUAN, C. Thermal properties of Ga2O3 thin films and devices prepared on sapphire and SiC substrates by liquid-injection MOCVD. In Proceedings of the SPIE, 2024, vol. 12887, no. 1288705. (2023: 0.152 – SJR). ISSN 0277-786X. Dostupné na: https://doi.org/10.1117/12.3013087 Typ: ADMB
• GUCMANN, Filip** – HUŠEKOVÁ, Kristína – ROSOVÁ, Alica – DOBROČKA, Edmund – EGYENES, Fridrich – HRUBIŠÁK, Fedor – KESHTKAR, Javad – CHOUHAN, Hemendra – KRETTOVÁ, Miriam – ELIÁŠ, Peter – NÁDAŽDY, Peter – GREGUŠOVÁ, Dagmar – POHORELEC, Ondrej – KOZAK, Andrii – ŤAPAJNA, Milan. Gallium oxide for applications in electronics and optoelectronics. In 12th International Conference on Advances in Electronic and Photonic Technologies – ADEPT 2024 : Proceedings of ADEPT. Editors: M. Feiler, M. Ziman, S. Kováčová, J. Kováč, jr. – Zilina : University of Zilina in EDIS-Publishing Centre of UZ, 2024, s. 13-16. ISBN 978-80-554-2109-4. (APVV 20-0220. VEGA 2/0100/21. International Conference on Advances in Electronic and Photonic Technologies (ADEPT 2024)) Typ: AFD
• CHOUHAN, Hemendra** – EGYENES, Fridrich – ROSOVÁ, Alica – HUŠEKOVÁ, Kristína – DOBROČKA, Edmund – NÁDAŽDY, Peter – ŤAPAJNA, Milan – XIAO, Xiaoyi – MAO, Y. – MENG, Baozhong – MA, Guozhong – YUAN, C. – GUCMANN, Filip. Heteroepitaxial growth of (010) β-Ga2O3ON sapphire substrates using α-Ga2O3 template by liquid-injection MOCVD. In 12th International Conference on Advances in Electronic and Photonic Technologies – ADEPT 2024 : Proceedings of ADEPT. Editors: M. Feiler, M. Ziman, S. Kováčová, J. Kováč, jr. – Zilina : University of Zilina in EDIS-Publishing Centre of UZ, 2024, s. 73-76. ISBN 978-80-554-2109-4. (APVV 20-0220. VEGA 2/0100/21. International Conference on Advances in Electronic and Photonic Technologies (ADEPT 2024)) Typ: AFD
• ŤAPAJNA, Milan – EGYENES, Fridrich – HRUBIŠÁK, Fedor – HUŠEKOVÁ, Kristína – DOBROČKA, Edmund – NÁDAŽDY, Peter – ROSOVÁ, Alica – CHOUHAN, Hemendra – KESHTKAR, Javad – GUCMANN, Filip. Liquid-injection MOCVD-grown Ga2O3 on sapphire and 4H-SiC substrates: Material, transport, and MOSFET properties. In IMFEDK 2023 : International Meeting for Future of Electron Devices, Kansai. – IEEE, 2023, p. IN10. ISBN 979-8-3503-9378-1. Dostupné na: https://doi.org/10.1109/IMFEDK60983.2023.10366336 (APVV 20-0220. APVV 21-0231. VEGA 2/0100/21) Typ: AFA