2027

Krajčovičová, T.E., Kotrusz, P., Skákalová, V., Laurenčíková, A., Píš, I., Hulman, M., Mustonen, K., and Sojková, M.: Graphene-confined growth of few-layer PtSe₂ via one-step selenization, Applied Surface Sci 755 (2027) 168682. (APVV SK-AT-23-0021, APVV-23-0564, VEGA 2/0075/25, SAS Return Project Scheme) access

Ondrejka, P., Husar, M., Stranovsky, A., Petrik, A., Sojková, M., Píš, I., Novak, P., Kemeny, M., and Mikolášek, M.: Binder-free MoOX/MoS₂ heterostructures based on molybdenum enabling ultra-stable hybrid supercapacitors, J. Power Sources 697 (2027) 241549. (EU Next Generation EU RRP No. 2DSuperCap-09I05-03-V02-00037, VEGA 2/0075/25, VEGA 1/0707/24)

Vadamundi, S.G., Gregušová, D., Hušeková, K., Sousani, S., Rosová, A.,  Izsák, T., Chouhan, H., Pospechová, Z., Pohorelec, O., Ťapajna, M., and Gucmann, F.: SiCl₄-based reactive ion etching for controlled low-damage mesa and gate recess formation in β-Ga₂O₃ MOSFETs, Mater. Sci Semicond. Process. 218 (2027) 111231. (EU Next Generation EU RRP No. 09I05-03-V02-00030, APVV-24-0325, APVV-23-0361, SK-TW-RD-24-0006, VEGA 2/0156/25) access