Hrubišák, F., Ťapajna, M., Egyenes, F., Pohorelec, O., Dobročka, E., Rosová, A., Hušeková, K., Vincze, A., Noga, P., Izsák, T., Hudec, B., Ščepka, T., and Gucmann, F.: The effect of hydrogen annealing on the electrical properties of β-Ga2O3/4H-SiC MOSFETs grown by liquid-injection MOCVD, Mater. Sci Semicond. Process. 206 (2026) 110402. ( (APVV-20-0220, 24-0325, SK-TW-RD-24-0006, VEGA 2/0156/25, IVF 22320095, CAS-SAS-2024-08, SAS-TUBITAK/JRP/2024/1107.C/COPS, EU NextGenerationEU Recovery and Resilience Plan for Slovakia No. 09I05-03-V02-00030)
