Mgr. Laurenčíková Agáta, PhD.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Kováč, J.jr., and Kováč, J.: Investigation of a nanostructured GaP/MoS2 p-n heterojunction photodiode, AIP Adv. 12 (2022) 065004.

1. Late, D.: AIP Adv. 12 (2022) 110401.

Škriniarová, J., Hronec, P., Chlpík, J., Laurenčíková, A., Kováč, J.jr., Novák, J., and Andok, R.: Investigation of volume fraction of GaP nanowires by SEM characterization and spectroscopic ellipsometry, Optik 234 (2021) 166572.

1. Zhao, R.N.: J. Nanopart. Res. 23 (2021) 269.
2. Yao, Z.H.: Inter. J. Fatigue 165 (2022) 107179.

Novák, J., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Kováč, J.jr., Urbancová, P., and Pudiš, D.: Twinned nanoparticle structures for surface enhanced Raman scattering, Applied Surface Sci 528 (2020) 146548.

1. Dumiszewska, E.: Crystals 13 (2023) 1539.
2. Shevchuk, R.E.: Lett. on Mater. 14 (2024) 175.

Gregušová, D., Tóth, L., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Cora, I., Fogarassy, Z., Stoklas, R., Seifertová, A., Blaho, M., Laurenčíková, A., Oyobiki, T., Pécz, B., Hashizume, T., and Kuzmík, J.: InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region, Japan. J. Applied Phys. 58 (2019) SCCCD21.

1. Biswas, D.: Mater. Sci Semicond. Process. 135 (2021) 106109.

Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119.

1. Andreev, B.A.: Semiconductors 53 (2019) 1357.
2. Cross, G. B.: J. Crystal Growth 536 (2020) 125574.
3. Wang, S.: Coatings 10 (2020) 1185.
4. Damas, G.B.: Applied Surface Sci 592 (2022) 153290.
#    5. Cao, B.: Adv. Function. Mater. 32 (2022) 2110715.

Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Kováč, J.jr., Szobolovszký, R., and Novák, J.: GaP nanocones covered with silver nanoparticles for surface-enhanced Raman spectroscopy, Applied Surface Sci 461 (2018) 149-153.

1. Zeng, Y.: Applied Surface Sci 544 (2021) 148924.
2. Liu, Y.: Mater. Horizons ‏ 8 (2021)‏ 370.
3. Ge, K.: Sensors Actuators B 361 (2022) 131734.
4. Ge, K.: Analyt. Bioanalyt. Chem. 414 (2022) 2385.
5. Lee, J.Y.: J. Korean Phys. Soc 82 (2023) 473.
6. Dumiszewska, E.: Crystals 13 (2023) 1539.

Lettrichová, I., Pudiš, D., Gaso, P., Jandura, D., Kováč, J.jr., Laurenčíková, A., Novák, J., and Goraus, M.: Polymer-based 3D microcones for application in SERS, Proc. SPIE 10976 (2018) 109760V.

1. Kim, J.A.: Adv. Optical Mater.‏ 8 (2020) 1901934.
#    2. Kim, J.A.: Progress in Biomed. Engn. 2 (2020) 042001.

Lettrichová, I., Laurenčíková, A., Pudiš, D., Novák, J., Goraus, M., Kováč, J.jr., Gaso, P., and Nevrela, J.: 2D periodic structures patterned on 3D surfaces by interference lithography for SERS, Applied Surface Sci 461 (2018) 171-174.

1. Hofmann, M.: J. Vacuum Sci Technol. B 37 (2019) 061803.
2. Chen, L.S.: Acta Optica Sinica 41 (2021) 0823018.
3. Pangpaiboon, N.: J. Metals Mater. Minerals 31 (2021) 33.
#     4. Lu, C.: Guangxue Jingmi Gongcheng/Optics Precision Engn. 30 (2022) 1836.
5. Roa, S.: Surfac. Interfac. 39 (2023) 102948.
6. Nie, C.H.: J. Pharmaceut. Anal. 13 (2023) 1429.

Novák, J., Laurenčíková, A., Eliáš, P., Hasenöhrl, S., Sojková, M., Dobročka, E., Kováč, J.jr., Kováč, J., Ďurišová, J., and Pudiš, D.: Nanorods and nanocones for advanced sensor applications, Applied Surface Sci 461 (2018) 61-65.

1. Rajkumar, C.: Results in Phys. 15 (2019) 102647.
2. Rajkumar, C.: Vacuum 168 (2019) UNSP 108856.
3. Chen, Y.: Adv. Mater. 32 (2021) 2001668.
4. Dumiszewska, E.: Crystals 13 (2023) 1539.

Ďurišová, J., Pudiš, D., Laurenčíková, A., Novák, J., and Šušlik, Ľ.: Reflectance suppression of ZnO coated GaP nanowires, Thin Solid Films 640 (2017) 88–92.

1. Tripathi, S.: Mapan-J. Metrol. Soc India 36 (2021) 97.
2. Vazinishayan, A.: Optik 234 (2021) 166545.

Novák, J., Laurenčíková, A., Hasenöhrl, S., Eliáš, P., and Kováč, J.:Methanol sensor for integration with GaP nanowire photocathode, Proc. SPIE 10248, Nanotechnology VIII (2017) 102480E.

#       1. Zhao, T.: Lecture Notes in Electr. Engn. 567 (2020) 264.

Gregušová, D., Blaho, M., Haščík, Š., Šichman, P., Laurenčíková, A., Seifertová, A., Dérer, J., Brunner, F., Wurfl, J., and Kuzmík, J.: Polarization-engineered n+GaN/InGaN/AlGaN/GaN normally-off MOS HEMTs, Physica Status Solidi a 214 (2017) 1700407.

1. Tokuda, H.: Japan. J. Applied Phys. 59 (2020) 084002.
2. Tapajna, M.: Crystals 10 (2020) 1153.
3. Biswas, D.: Mater. Sci Semicond. Process. 135 (2021) 106109.
4. Li, J.L.: Superlatt. Microst. 161 (2022) 107064.

Lettrichová, I., Pudiš, D., Laurenčíková, A., Gaso, P., Šušlik, Ľ., Jandura, D., Ďurišová, J., and Novák, J.: Optical properties of GaAs-based LED with Fresnel structure in the surface, Proc. SPIE 10142 (2016) 101421P.

1. Chen, D.: Macromolecul. Rapid Comm. 42 (2021) 2000462.

Pudiš, D., Škriniarová, J., Lettrichová, I., Laurenčíková, A., Benčurová, A., Kováč, J., and Novák, J.: Near-field scanning optical microscopy and lithography for LED characterization and semiconductor patterning, Proc. SPIE 9441 (2014) 94410P.

1. Suslik, L.: In 13th Inter. Conf. Elektro – ELEKTRO 2020.

Novák, J., Laurenčíková, A., Vávra, I., Hasenöhrl, S., and Reiffers, M.: Magnetic properties of InMnAs nanodots prepared by MOVPE, J. Magnetism Magnetic Mater. 327 (2013) 20-23.

1. Bouravleuv, A. D.: Nanotechnol. 27 (2016) 425706.
2. Bouravleuva, A.: J. Crystal Growth 468 (2017) 680.
3. Kodaira, R.: J. Crystal Growth 507 (2019) 241.
#     4. Sanygin, V.P.: Kondensir. Sredy Mezhfaznye Granitsy 23 (2021) 413.
5. Muneta, I.: Sci Rep 12 (2022) 17199.

Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Stoklas, R., Blaho, M., Novotný, I., Križanová, Z., and Novák, J.:Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization. Applied Surface Sci 267 (2013) 60-64.

1. Vidu, R.: Frontiers in Systems Neurosci 8 (2014) 91.
#     2. Opris, I.: In Recent advances on the modular organization of the cortex. Springer 2015 ISBN: 978-94-017-9899-0. P. 339.
3. Jahromi, K.E.: IEEE Electron Device Lett. 37 (2016) 43.
4. Pampaloni, N.P.: Front. Neurosci 12 (2019) 953.

Novák, J., Križanová, Z., Vávra, I., Eliáš, P., Hasenöhrl, S., Laurenčíková, A., Novotný, I., Kováč, J., Šutta, P., and Mikulics, M.: Structural and optical properties of individual GaP/ZnO core-shell nanowires, Vacuum 98 (2013) 106-110.

1. Chee, C.Y.: Ceramics Inter. 40 (2014) 9997.
2. Karunakaran, C.: Powder Technol. 254 (2014) 480.

Chromik, Š., Štrbík, V., Dobročka, E., Dujavová, A., Reiffers, M., Liday, J., and Španková, M.: Significant increasing of onset temperature of FM transition in LSMO thin films, Applied Surface Sci 269 (2013) 98-101.

  1. Pei, H.: ACS Applied Mater. Interfaces 10 (2018) 30895.

Hasenöhrl, S., Eliáš, P., Šoltýs, J., Stoklas, R., Laurenčíková, A., and Novák, J.: Zinc-doped gallium phosphide nanowires for photovoltaic structures, Applied Surface Sci 269 (2013) 72-76.

1. Chandiramouli, R.: Mater. Sci Engn. B 194 (2015) 55.
2. Lee, S.: ACS Applied Mater. & Interfaces 8 (2016) 16178.
3. Horley, P.: Physica E 83 (2016) 227.
4. Chen, J.-Y.: CRYSTENGCOMM 19 (2017) 975.
5. Mohammad, R.: Inter. J. Modern Phys. C 28 (2017) Iss. 3.
6. Kim, D.-H.: J. Electronic Mater. 46 (2017) 4750.
7. Sharov, V.: Scripta Materialia 248 (2024) 116128.
8. Singh, N.P.: Solid State Comm. 390 (2024) 115593.

Woch, W.M., Dujavová, A., Przewoznik, J., Zalecki, R., Kolodziejczyk, A., Sojková, M., and Chromik, Š.: Magnetization, susceptibility and critical currents of (Tl2-xRex)Ba2CaCu2Oy thin films, Acta Phys. Polonica A 121 (2012) 845-849.

#       1. Kong, W.: Solid State Phenom. 290 (2019) 227.

Novák, J., Šoltýs, J., Eliáš, P., Hasenöhrl, S., Stoklas, R., Laurenčíková, A., and Mikulics, M.: Electrical and photoluminescence properties of individual GaP nanowires doped by zinc, Phys. Status Solidi a 209 (2012) 2505-2509.

1. Jiang, H.-B.: Chinese Sci Bull. 59 (2014) SI2135.
2. Wallentin, J.: Nano Lett. 14 (2014) 1707.
3. Tomioka, K.: J. Phys. D 47 (2014) SI394001.
4. Liao, G.: Sci Rep. 6 (2016) 28240.

Truchly, M., Plecenik, T., Krško, O., Gregor, M., Satrapinskyy, L., Roch, T., Grančič, B., Mikula, M.,Laurenčíková, A., Chromik, Š., Kúš, P., and Plecenik, A.: Studies of YBa2Cu3O6+x degradation and surface conductivity properties by scanning spreading resistance microscopy, Physica C 483 (2012) 61-66.

1. Vilimova, P.: Polymer Testing 52 (2016) 46.
2. Zhong, J.: RSC Adv. 6 (2016) 1103.
3. Il’in, A. I.: Phys. Solid State 62 (2020) 1725.
4. Choi, E.-M.: Nanoscale 12 (2020) 3157.
5. Sander, A.: Sci Rep. 11 (2021) 20788.

Štrbik, V., Beňačka, Š., Gaži, Š., Šmatko, V., Chromik, Š., Laurenčíková, A., and Vávra, I.: Effect of gallium focused ion beam irradiation on properties of YBa2Cu3Ox/La0,67Sr0,33MnO3 heterostructures, J. Electr. Engn. 62 (2011) 109-113.

1. Cui, A.: Sci Rep 3 (2013) 2429.
2. Popovic, Z.: J. Phys. Soc Japan 82 (2013) 114714.
3. Popovic, Z.: Europ. Phys. J. Plus 138 (2023) 767.

Laurenčíková, A., Sojková, M., Chromik, Š., Štrbik, V., and Kostič, I.: Tl-based patterned superconducting structures: fabrication and study, Supercond. Sci Technol. 23 (2010) 045007.

 1. Narasimhachar, V.: Nature Comm. 6 (2015) 7689.
#    2. Chen, M.: Key Engn. Mater. 773 (2018) 162.
3. Qin, B.Y.: Sustainab. Energy Technol. Assessments 69 (2024) 103925.

Laurenčíková, A., Sojková, M., Štrbik, V., Matkovičová, Z., Plesch, G., and Kostič, I.: Influence of the reaction conditions on the formation of Tl(Re)-Ba-Ca-Cu-O superconducting thin films by thallination in open system, Central European J. Phys. 5 (2007) 229-235.

   1. Chen, Y.F.: Supercond. Sci Technol. 21 (2008) 085005.

Matkovičová, Z., Štrbik, V., Plesch, G., Sojková, M., and Laurenčíková, A.: Tl-based superconducting films prepared by aerosol spray deposition and thallinated in an open system, Central European J. Phys. 5 (2007) 398-404.

1. Kalubarme, R.S.: J. Alloys Compounds 479 (2009) 732.
2. Kalubarme, R.S.: J. Supercond. Novel Magnetism 23 (2010) 1313.
3. Liang, X.L.: Ceram. Inter. 49 (2023) 15665.