Mgr. Gaži Štefan

Štrbík, V., Beňačka, Š., Gaži, Š., Španková, M., Šmatko, V., Knoška, J., Gál, N., Chromik, Š., Sojková, M., and Pisarčík, M.: Superconductor-ferromagnet-superconductor nanojunctions from perovskite materials, Applied Surface Sci 395 (2017) 237-240.

1. Ma, L.: Sensors Actuators B 255 (2018) 2546. 2. Liu, X.: J. Alloys Compounds 772 (2019) 263.

Tsindlekht, M.I., Genkin, V.M., Felner, I., Zeides, F., Katz, N., Gaži, Š., Chromik, Š., Dobrovolskiy, O.V., Sachser, R., and Huth, M.: Magnetic moment jumps in flat and nanopatterned Nb thin-walled cylinders, Physica C 533 (2017) 101-104.

1. Margulis, V.A.: Nanosystems-Phys. Chem. Mathem. 9 (2018) 244.

Žemlička, M., Neilinger, P., Trgala, M., Rehak, M., Manca, D., Grajcar, M., Szabó, P., Samuely, P., Gaži, Š., Hübner, U., Vinokur, V., and Iľichev, E.: Finite quasiparticle lifetime in disordered superconductors, Phys. Rev B 92 (2015) 224506.

1. Blien, S.: Physica Status Solidi B 253 (2016) 2385. 2. Peltonen, J. T.: Phys. Rev. B 94 (2016) 180508. 3. Simmendinger, J.: Phys. Rev. B 94 (2016) 064506. 4. Herman, F.: Phys. Rev. B 96 (2017) 014509. 5. Kapria, P.: Europ. Phys. J. B 90 (2017) 33. 6. Seibold, G.: Phys. Rev. B 96 (2017) 144507. 7. Pracht, U.S.: Phys. Rev. B 96 (2017) 094514. 8. Kapri, P.: Physica E 99 (2018) 67. 9. Kapri, P.: European Phys. J. B 91 (2018) 12. 10. Kapri, P.: Physica E 103 (2018) 383. 11. Mauskopf, P.D.: Publ. Astronom. Soc Pacific 130 (2018) 082001. 12. Basset, J.: Applied Phys. Lett. 113 (2019) 102601. 13. Maccari, I.: Phys. Rev. B 99 (2019) 104509.

Tsindlekht, M., Genkin, V., Felner, I., Zeides, F., Katz, N., Gaži, Š., Chromik, Š., : dc and ac magnetic properties of thin-walled superconducting niobium cylinders. Phys. Rev. B 90 (2014) 014514.

1. Aburas, M.: Supercond. Sci Technol.  30 (2017) 015009. 2. Ptok, A.: Comm. Comput. Phys. 21 (2017) 748. 3. Demchenko, I.N.: Applied Surface Sci 399 (2017) 32. 4. Demchenko, I.N.: J. Electron Spectrosc. Related Phenomena 224 (2018) SI 17.

Bystritsky, V.M., Bystritskii, Vit.M., Dudkin, G.N., Filipowicz, M., Gaži, Š., Huran, J., Nechaev, B.A., Padalko, V.N., Parzhitskii, S.S., Penkov, F.M., Philippov, A.V., and Tuleshev, Yu.Zh.: First experimental evidence of D(p, ᵧ)3He reaction in deuteride titanium in ultralow collision energy region, Nuclear Instr. Methods Phys. Res. A 753 (2014) 91-96.

1. Bagulya, A. V.: Phys. Particl. Nuclei 48 (2017) 691.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Tuleushev, Y., : Effect of the crystal structure of a deuterated target on the yield of neutrons in the dd reaction at ultralow energies. JETP Lett. 99 (2014) 497-502.

1. Molodets, A.M.: Phys. Solid State 56 (2014) 2524. 2. Bagulya, A.V.: J. Surface Invest. 11 (2017) 58.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Tuleushev, Y., Varlachov, V., : Experimental verification of hypothesis of dd reaction enhancement by channeling of deuterons in titanium deuteride at ultralow energies,. Nuclear Instr. Methods Phys. Res. A 764 (2014) 42-47.

 1. Bagulya, A.V.: Nuclear Instr. Methods in Phys. Res. B  402 (2017) 243. 2. Bagulya, A. V.: Phys. Particl. Nuclei 48 (2017) 691. 3. Choudhury, R.K.: EPL 126 (2019) 12002.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Tuleushev, Y., : First experimental evidence of D(p, ᵧ)3He reaction in titanium deuteride in ultralow collision energy region,. J. Experiment. Theoret. Phys. 119 (2014) 54-62.

       1. Bagulya, A.V.: J. Surface Invest. 11 (2017) 58.

Bystritsky, V., Kobzev, A., Krylov, A., Parzhitskii, S., Philippov, A., Dudkin, G., Nechaev, B., Padalko, V., Penkov, F., Tuleushev, Y., Filipowicz, M., Bystritsky, V., Gaži, Š., Huran, J., : Study of the d(p, ᵧ)3He reaction at ultralow energies using a zirconium deuteride target,. Nuclear Instr. Methods Phys. Res. A 737 (2014) 248-252.

1. Purcell, J.E.: Nuclear Data Sheets 130 (2015) 1. 2. Bagulya, A. V.: Phys. Particl. Nuclei 48 (2017) 691.

Trgala, M., Žemlička, M., Neilinger, P., Rehak, M., Leporis, M., Gaži, Š., Greguš, J., Plecenik, T., Roch, T., Dobročka, E., Grajcar, M., : Superconducting MoC thin films with enhanced sheet resistance. Applied Surface Sci 312 (2014) 216-219.

1. Jiao, G.: Applied Phys. A 120 (2015) 579. 2. Zou, J.: Acta Metall. Sinica 53 (2017) 31.

Tsindlekht, M., Genkin, V., Gaži, Š., and Chromik, Š.: AC conductivity of a niobium thin film in a swept magnetic field, J. Phys.: Cond. Matt. 25 (2013) 085701.

        1. Kang, N.L.: AIP Adv. 3 (2013) 072104.

Šoltýs, J., Gaži, Š., Fedor, J., Tóbik, J., Precner, M., and Cambel, V.: Magnetic nanostructures for non-volatile memories. Microelectr. Engn. 110 (2013) 474-478.

        1. Hluchy, L.: Comput. Informat. 35 (2016) 1386.

Cambel, V., Tóbik, J., Šoltýs, J., Fedor, J., Precner, M., Gaži, Š., and Karapetrov, G.: The influence of shape anisotropy on vortex nucleation in Pacman-like nanomagnets,. J. Magnetism Magnetic Mater. 336 (2013) 29-36.

1. Galvao, S.B.: Mater. Lett. 115 (2014) 38. 2. Hluchy, L.: Comput. Informat. 35 (2016) 1386. 3. Zheng, Y.: Rep. Progress in Phys. 80 (2017) 086501. 4. Ziegelwanger, H.: J. Comput. Phys. 346 (2017) 152.

Bystritsky, V.M., Bystritskii, Vit.M., Dudkin, G.N., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A.P., Mesyats, G.A., Nechaev, B.A., Padalko, V.N., Parzhitskii, S.S., Penkov, F.M., Philippov, A.V., Kaminskii, V.L., Tuleshev, Yu.Zh., and Wozniak, J.: Investigation of temperature dependence of neutron yield and electron screening potentials for d(d,n)3He reaction proceeding in deuterides ZrD2 and TiD2, Phys. Atomic Nuclei 75 (2012) 913-922.

1. Choudhury, R.K.: EPL 126 (2019) 12002.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Kaminskii, V., Tuleushev, Y., Wozniak, J., :Measurement of astrophysical S factors and electron screening potentials for d(d,n)3He reaction in ZrD2, TiD2, D2D, and CD2 targets in the ultralow energy region using plasma accelerators. Phys. Atomic Nuclei 75 (2012) 53-62.

1. Bagulya, A. V.:  Bull. Lebedev Phys. Inst. 39 (2012) 325. 2. Tsyganov, E.N.: Nuclear Instr. Methods in Phys. Res. B  355 (2015) 333.

Nurgaliev, T., Blagoev, B., Mateev, E., Štrbik, V., Beňačka, Š., Šmatko, V., Gaži, Š., and Chromik, Š.:  Planar homogeneity of the electrical properties of YBa2Cu3O7/La0.7Sr0.3MnO3 bi-layers , J. Phys.: Conf. Ser. 356 (2012) 012020.

1. Marinov, G.: Optical Mater. 89 (2019) 390.

Bystritsky, V., Bystritsky, V., Dudkin, G., Filipowicz, M., Gaži, Š., Huran, J., Kobzev, A., Mesyats, G., Nechaev, B., Padalko, V., Parzhitskii, S., Penkov, F., Philippov, A., Kaminskii, V., Tuleushev, Y., Wozniak, J., :Measurement of astrophysical S-factors and electron screening potentials for View the MathML source reaction in ZrD2, TiD2 and TaD0.5 targets in the ultralow energy region using plasma accelerator. Nuclear Phys. A 889 (2012) 93-104.

1. Xu, Y.: Nuclear Phys. A 918 (2013) 61. 2. Coc, A.: Phys. Rev. D 92 (2015) 123526. 3. Tsyganov, E.N.: Nuclear Instr. Methods in Phys. Res. B  355 (2015) 333. 4. Choudhury, R.K.: EPL 126 (2019) 12002.

Štrbik, V., Beňačka, Š., Gaži, Š., Šmatko, V., Chromik, Š., Laurenčíková, A., Vávra, I., : Effect of gallium focused ion beam irradiation on properties of YBa2Cu3Ox/La0,67Sr0,33MnO3 heterostructures. J. Electr. Engn. 62 (2011) 109-113.

1. Cui, A.: Sci Rep 3 (2013) 2429. 2. Popovic, Z.: J. Phys. Soc Japan 82 (2013) 114714.

Stoklas, R., Gregušová, D., Gaži, Š., Novák, J., and Kordoš, P.: Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering. J. Vacuum Sci Technol. B 29 (2011) 01A809.

1. Shih, H.-A.: Japan. J. Applied Phys. 51 (2012) Part 2 02BF01. 2. Shih, H.-A.: Applied Phys. Lett. 101 (2012) 043501. 3. Freedsman, J.J.: Applied Phys. Lett. 101 (2012) 013506. 4. Tuan, Q.N.: Phys. Status Solidi C 10 (2013) 1401. 5. Shih, H.-A.: J. Applied Phys. 116 (2014) 184507. 6. Son, P.L.: J. Applied Phys. 116 (2014) 054510. 7. Le, S.P.: J. Applied Phys. 119 (2016) 204503. 8. Tan, S.: J. Semicond. 40 (2019) 042801.

Fröhlich, K., Hudec, B., Aarik, J., Tarre, A., Machajdík, D., Kasikov, A., Hušeková, K., Gaži, Š., : Post-deposition processing and oxygen content of TiO2-based capacitors. Microelectr. Engn. 88 (2011) 1525-1528.(APVV 0133-07).

      1. Bayati, M.: J. Mater. Res. 28 (2013) SI1669.

Valovič, A., Huran, J., Kučera, M., Kobzev, A., Gaži, Š., : Properties study of silicon carbide thin films prepared by electron cyclotron resonance plasma technology. European Phys. J. Applied Phys. 56 (2011) 24013.

       1. Omar, M.F.: IEEE 4th Inter. Conf. Photonics 2013, Art. no. 6687098, Pp 154.

Čičo, K., Gregušová, D., Gaži, Š., Šoltýs, J., Kuzmík, J., Carlin, J., Grandjean, N., Pogany, D., and Fröhlich, K.: Optimization of the ohmic contact processing in InAlN/GaN high electron mobility transistors for lower temprerature of annealing, Phys. Status Solidi c 7 (2010) 108-111.

1. Kim, S.: Applied Phys. Lett. 102 (2013) 052107. 2. Lee, D.S.: Japan. J. Applied Phys. 53 (2014) 100212. 3. Bergsten, J.: Semicond. Sci Technol. 30 (2015) 105034. 4. Li, Q.: AIP Adv. 7 (2017) 125103. 5. Li, Q.: Acta Phys. Sinica 67 (2018) 027303. 6. Yoshida, T.: Japan. J. Applied Phys. 57 (2018) 110302. 7. Lin, Y.-K.: Semicond. Sci Technol.33 (2018) 095019.

Gregušová, D., Gaži, Š., Sofer, Z., Stoklas, R., Dobročka, E., Mikulics, M., Greguš, J., Novák, J., and Kordoš, P.: Oxidized Al film as an insulation layer in AlGaN/GaN Metal–Oxide–Semiconductor heterostructure field effect transistors, Japan. J. Applied Phys. 49 (2010) 046504.

1. Ozen, S.: Mater. Res. Express 3 (2016) 045012. 2. Kanaga, S.: IEEE Inter. Conf. Electron. Comput. Comm. Technol. 2018.

Kordoš, P., Stoklas, R., Gregušová, D., Gaži, Š., and Novák, J.: Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurement. Applied Phys. Lett. 96 (2010) 013505.

1. Zeng, H.Z.: J. Applied Phys. 107 (2010) 084508. 2. Arslan, E.: Microelectr. Reliab. 51 (2011) 576. 3. Freedsman, Joseph J.: Applied Phys. Lett. 101 (2012) 013506. 4. Zhang, K.: J. Applied Phys. 113 (2013) 174503. 5. Ma, X.-H.: Applied Phys. Lett. 104 (2014) 093504. 6. Zhang, P.: Chinese Phys. Lett. 31 (2014) 037302. 7. Lu, X.: Applied Phys. Lett. 104 (2014) 032903. 8. Zhang, K.: Semicond. Sci Technol.  29 (2014) 075019. 9. Liu, X.: Applied Phys. Lett. 104 (2014) 263511. 10. Liao, X.-Y.: Chinese Phys. B 23 (2014) 057301.    11. Shih, H.-A.: J. Applied Phys. 116 (2014) 184507.    12. Ma, J.: Applied Phys. Express 7 (2014) 091002. 13. Zhou, Y.: Semicond. Sci Technol. 29 (2014) 095011. #  14. Kaushik, J.K.: IEEE 2nd ICEE 2014 – 7151157. 15. Ramanan, N.: IEEE Trans. Electron Dev. 62 (2015) 546. 16. Fang, Y.: Superlatt. Microstr. 82 (2015) 201. 17. Zhang, P.: Chinese Phys. B 24 (2015) 127306. 18. Jiang, H.: IEEE Trans. Electron Dev. 64 (2017) 832. 19. Wang, N.: AIP Adv. 7 (2017) 095317. 20. Byun, Y.-C.: Applied Phys. Lett. 111 (2017) 082905.

Tarenkov, V., D’yachenko, A., Sidorov, S., Bolchenko, V., Bolchenko, D., Chromik, Š., Štrbik, V., Gaži, Š., Španková, M., and Beňačka, Š.: Electron tunneling spectroscopy of the phonon spectrum of MgB2 Phys. Solid State 51 (2009) 1778-1784.

1. Markovskiy, N. D.: Phys. Rev. B 83 (2011) 174301. 2. Ponosov, Y.S.: Phys. Rev. B 96 (2017) 214503.

Stoklas, R., Gaži, Š., Gregušová, D., Novák, J., Kordoš, P., : Enhancement of effective carrier velocity in AlGaN/GaN MOSHFETs with Al2O3 gate oxide. Physica Status Solidi c 5 (2008) 1935-1937.

  1. Saadat, O.I.: IEEE Electron Device Lett. 30 (2009) 1254. 2. Li, Y.: IEEE Trans. Electron Dev. 64 (2017) 3139.

Kordoš, P., Gregušová, D., Stoklas, R., Gaži, Š., and Novák, J.: Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness, Solid-State Electr. 52 (2008) 973-979.

1. Osvald, J.: In: ASDAM 2008. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 319. 2. Chen H.: Proc. 9th Inter. Conf. Solid-State and Integr. Circuits (2008) 1443. 3. Selvaraj, S.L.: J. Electrochem. Soc. 156 (2009) H690. 4. Osvald, J.: J. Applied Phys. 106 (2009) 013708. 5. Maeda, N.: Phys. Status.Solidi C 6 (2009) S1049. 6. Maeda, N.: Proc. SPIE 7216 (2009) 721605. 7. Liu, Z.H.: Applied Phys. Lett. 95 (2009) 223501. 8. Bi, Z.W.: 2009 IEEE Inter. Conf. Electron Dev. Solid-St. Circuits (2009) 419. 9. Taking, S.: Electronics Lett. 46 (2010) 301. •  10. Osvald, J.: In: ASDAM 2010. Piscataway: IEEE, 2010. ISBN: 978-1-4244-8572-7. P. 167. 11. Bi, Z.W.: Chinese Phys. B 19 (2010) 077303. 12. Kim, K,-W.: Microelectr. Engn. 88 (2011) 1225. 13. Liu, S.: Japan. J. Applied Phys. 50 (2011) 04DF10. 14. Esposto, M.: Applied Phys. Lett. 99 (2011) 133503. 15. Hung, T.-H.: Applied Phys. Lett. 99 (2011) 162104. 16. Osvald, J.: J. Applied Phys. 110 (2011) 073702. 17. Kirkpatrick, C.: Phys. Status Solidi C 8 (2011) Is. 7-8. 18. Bi, Z.W.: Chinese Phys. B 29 (2012) 028501. 19. Ji, D.: Applied Phys. Lett. 100 (2012) 132105. 20. Kirkpatrick, C.J.: IEEE Electron Device Lett. 33 (2012) 1240. 21. Osvald, J.: ASDAM 2012 (2012) art. no. 6418555, pp. 59. 22. Hung, T.-H.: Applied Phys. Lett. 102 (2013) 072105. *   23. Osvald, J.: ADEPT 2013. Žilina: Univ. Žilina 2013. ISBN 978-80-554-0689-3. P. 36. 24. Meng, D.: IEEE Electron Device Lett. 34 (2013) 738. 25. Osvald, J.: J. Electronic Mater. 42 (2013) 1184. 26. Ji, D.: Thin Solid Films 534 (2013) 655. 27. Kambayashi, H.: Japan. J. Applied Phys. 52 (2013) SIUNSP 04CF09. 28. Pang, L.: 2013 IEEE Power Energy Conf. (2013) 8. 29. Osvald, J.: Phys. Status Solidi A 210  (2013) 1340. 30. Liu, X.: Applied Phys. Lett. 103 (2013) 053509. 31. Osvald, J.: Environmen. Sci Engn. (2014) 215. 32. Mazumder, B.: J. Applied Phys. 116 (2014) 134101. 33. Feng, Q.: Chinese Phys. Lett. 32 (2015) 017301. 34. Winzer, A.: J. Applied Phys. 118 (2015) 124106. 35. Hung, C.-W.: Solid-State Electron. 124 (2016) 5. #   36. Zhou, X.J.: J. Applied Phys. 120 (2016) 125706. 37. Teramoto, A.: IEEE Electron Device Lett. 38 (2017) 1309. 38. Liu, J.: Sensors 18 (2018) 813.

Ťapajna, M., Rosová, A., Dobročka, E., Štrbik, V., Gaži, Š., Fröhlich, K., Benko, P., Harmatha, L., Manke, C., Baumann, P., : Work function thermal stability of RuO2-rich Ru–Si–O p-channel metal-oxide-semiconductor field-effect transistor gate electrodes. J. Applied Phys. 103 (2008) 073702.

1. Choi, C.: Applied Phys. Lett. 98 (2011) 083506. 2. Choi, C.: Applied Phys. Lett. 98 (2011) 123506. 3. Benkovska, J.: Phys. Status Solidi A 209 (2012) 1384. 4. Kaczmarski, J.: J. Display Technol. 11 (2015) 528. 5. Popovici, M.: Chem. Mater. 29 (2017) 4654. #    6. Jung, W.: New Phys.: Sae Mulli 67 (2017) 696.

Vávra, O., Gaži, Š., Golubovič, J., Vávra, I., Dérer, J., Verbeeck, J., van Tendeloo, G., and Moshchalkov, V.: 0 and π phase Josephson coupling through an insulating barrier with magnetic impurities. Phys. Rev. B 74 (2006) 020502.

1. Kawabata, S.: Phys. Rev. B 74 (2006) art. no. 180502(R). 2. Goldobin, E.: Phys. Rev. B 76 (2007) art. no. 224523. 3. Derks, G.: SIAM J. Applied Dynamical Systems 6 (2007) 99. 4. Walser, R.: New J. Phys. 10 (2008) 045020. 5. Cristofano, G.: Phys. Lett. A 372 (2008) 6965. 6. De Luca, R.: Phys. Rev. B 79 (2009) 094516. 7. Susanto, H.: Phys. Lett. A 373 (2009) 1387. 8. Sprungmann, D.: J. Phys. D 42 (2009) 075005. 9. Gurlich, C.: Phys. Rev. Lett. 103 (2009) 067011. 10. Ahmad, S.: Phys. Rev. B 80 (2009) 064515. 11. Gurlich, C.: Phys. Rev. B 81 (2010) 094502. 12. Susanto, H.: Phys. Rev. B 82 (2010) 132301. 13. Ahmad, S.: Phys. Rev. B 82 (2010) 174504. 14. Ali, A.: Physica D 246 (2013) 15. 15. Savinov, D.A.: Physica C 509 (2015) 22. 16. Ali, A.: J. Mathemat. Phys. 56 (2015) 051502. 17. Schrade, C.: Phys. Rev. Lett. 115 (2015) 237001. 18. Savinov, D.A.: Physica C 527 (2016) 80. 19. Jiang, L.: Phys. Rev. A 94 (2016) 043625. 20. Gul, Z.: Chaos Solitons & Fractals 107 (2018)103. 21. Ostrovskii, V.Y.: Proc. Conf. Open Innovations Association FRUCT (2018)300. 22. Gul, Z.: J. Phys. A 52 (2019) 015203.

Vávra, O., Gaži, Š., Vávra, I., Golubovič, J., Dérer, J., and Moshchalkov, V.: Integration method for visualization of the suppressed Josephson supercurrent. Physica C 435 (2006) 92-95.

1. Savinov, D.A.: Physica C 509 (2015) 22. 2. Savinov, D.A.: Physica C 527 (2016) 80.

Chromik, Š., Gaži, Š., Štrbik, V., Španková, M., Vávra, I., Beňačka, Š., van der Beek, C., and Gierlowski, P.:Electrical and structural properties of MgB2 films prepared by sequential deposition of B and Mg on the NbN-buffered Si(100) substrate. J. Applied Physics 96 (2004) 4668-4670.

1. Zhu, H.M.: Physica C 452 (2007) 11. 2. Mazzetti, P.: Phys. Rev. B 77 (2008) 064516.

Vávra, O., Gaži, Š., Vávra, I., Dérer, J., and Kováčová, E.: High efficiency Andreev reflection observed in Nb/Fe0.5Si0.5/Nb Josephson junctions. Physica C 404 (2004) 395-399.

1. Balaev, D.A.: Phys. Solid State 48 (2006) 2046. 2. Zikic, R.: Phys. Rev. B 75 (2007) art. no. 100502(R). 3. Zikic, R.: Supercond. Sci Technol. 22 (2009) 075022. 4. Popovic, Z.: Phys. Rev. B 85 (2012) 174510. 5. Dalouji, V.: Optik 156 (2018) 338.

Tesař, R., Koláček, R., Kawate, E., Beňačka, Š., Gaži, Š., Šimša, Z., : Far-infrared thermal spectroscopy of low-Tc and high-Tc superconductor films. Supercond. Sci Technol. 16 (2003) 916-920.

1. Mezzetti, E.: Physica C 470 (2010) 918. 2. Zhang, C.: J. Infrared Millim. Terahertz Waves 33 (2012) 1071.

Španková, M., Vávra, I., Chromik, Š., Gaži, Š., Štrbik, V., Kúš, P., Machajdík, D., Beňačka, Š., : Improvement of the superconducting properties of YBCO thin films upon annealing of CeO2/Al2O3 substrate. Thin Solid Films 416 (2002) 254-259.

1. Xiong, J.: Physica C 442 (2006) 124. 2. Sunder, M.: J. Electr. Mater. 38 (2009) 1931. #   3. Chouial, B.: J. Applied Sci 9 (2009) 197. 4. Vidu, R.: Industrial Engn. Chem. Res. 53 (2014) 7829.

Vávra, O., Gaži, Š., Bydžovský, J., Dérer, J., Kováčová, E., Frait, Z., Marysko, M., Vávra, I., : Study of the proximity effect in the Nb′/FexSi1−x/Nb tunnel junctions. J. Magnetism Magnetic Mater. 240 (2002) 583-585.

      1. Halterman, K.: Phys. Rev. B 70 (2004) 104516.

Chromik, Š., Beňačka, Š., Gaži, Š., Štrbik, V., Öszi, Z., Kostič, I., : Superconducting properties of MgB2 thin films prepared by sequential deposition of boron and magnesium. Vacuum 69 (2002) 351-356.

1. Matveev, AT.: Supercond. Sci Technol. 18 (2005) 1313. 2. Mičunek, R.: Physica C 435 (2006) 78. 3. Gregor, M.: Physica C 468 (2008) 785. 4. Yakinci, M.E.: J. Supercond. Novel Magnetism 24 (2011) 235. 5. Yakinci, Z.D.: J. Supercond. Novel Magnetism 24 (2011) 523. 6. Zhou, Z.: Advan. Mater. Res. 479-481 (2012) 1781. 7. Gregor, M.: Applied Surface Sci 312 (2014) 97. 8. Xu, Z.: Supercond. Sci Technol. 30 (2017) 035013.

Chromik, Š., Cannaerts, M., Gaži, Š., van Haesendonck, C., Španková, M., Kúš, P., Beňačka, Š., : The influence of (1 View the MathML source 0 2) sapphire substrate on structural perfection of CeO2 thin films. Physica C 371 (2002) 301-308.

1. Van Driessche, I.: Materials Science Forum 426-4 (2003) 3517. 2. Mozhaev, P.B.: Crystallography Reports 49 (2004) S129. *       3. De Barros, D.: PhD. Thesis. Grenoble: UJF 2004. 4. Valerianova, M.: Physica C 435 (2006) 31. 5. Dujavová, A.: Central European J. Phys. 5 (2007) 229. 6. Murugesan, M.: J. Crystal Growth 304 (2007) 118. 7. Solovyov, V.F.: Physical Rev. B 80 (2009) 104102. 8. You, F.: Supercond. Sci Technol. 23 (2010) 065002. 9. Zhang, T.: J. Materials Engn. Perform. 19 (2010) 1220.

Chromik, Š., Jergel, M., Gaži, Š., Štrbik, V., Hanic, F., Falcony, C., Vaško, M., Beňačka, Š., : Influence of substrate and precursor film composition on morphology and superconducting transition of Tl-2212 thin films characterized by microwaves. Physica C 354 (2001) 429-433.

1. Malandrino, G.: Chemistry Mat. 16 (2004) 608. *     2. Malandrino, G.: IoP Conf. Ser. No 181 (2004) 1590. 3. Malandrino, G.: Chemical Vapor Deposition 11 (2005) 381. 4. Speller, S.C.: J. Mater. Research 21 (2006) 1645.

Plecenik, A., Satrapinskyy, L., Kúš, P., Gaži, Š., Beňačka, Š., Vávra, I., Kostič, I., : MgB2 superconducting thin films on Si and Al2O3 substrates. Physica C 363 (2001) 224-230.

1. Buzea, C.: Supercond. Sci Technol. 14 (2001) R115. 2. Fu, X. H.: Physica C 377 (2002) 407. 3. Zhu, Y.-Bin.: Physica C 371 (2002) 7. 4.Kang, W.N.: Physica C 385 (2003) 24. 5. Peng, N.: Applied Physics Letters 82 (2003) 236. 6. Sahoo, B.: Phase Transitions 76 (2003) 423. 7. Jadhav, A.B.: Supercond Sci Techn. 16 (2003) 752. 8. Xi, X.X.: IEEE Trans. Applied Supercond. 13 (2003) 3233. 9. Monticone, E.: IEEE Trans. Applied Supercond. 13 (2003) 3242. 10. Gritzner, G.: IEEE Trans. on Applied Supercond. 13 (2003) 3313. 11. Andrade, E.: Thin Solid Films 433 (2003) 103. 12. Yates, K.A.: Materials Sci Forum 426-4 (2003) 3379. 13. Cheang-Wong, J.C.: Supercond Sci Technol. 16 (2003) 879. 14. Xi, X.X.: J. Supercond. 16 (2003) 801. 15. Jergel, M.: Physica C 383 (2003) 287. 16. Wang, S.F.: Chinese Phys. Lett. 20 (2003) 1356. 17. Krasnosvobodtsev, S.I.: Technical Phys. 48 (2003) 1071. 18. Zhao, Y.: Supercond. Sci Technol. 16 (2003) 1487. 19. Xi, X.X.: Supercond. Sci Technol. 17 (2004) S196. #     20. Xi, X.X.: Inst. Phys. Conf. Series 181 (2004) 37. 21. Monticone, E.: Supercond. Sci Technol. 17 (2004) 649. 22. Shaltaf, R.: Phys. Rev. B 69 (2004) 125417. 23. Dmitriev, V.M.: Low Temperature Phys. 30 (2004) 284. 24. Chromik, S.: Acta Physica Slovaca 54 (2004) 169. *     25. Portesi, C. E.: IoP Conf. Ser. No 181 (2004) 1333. 26. Vasek, P.: Physica C 411 (2004) 164. 27. Andrade, E.: Nuclear Instrum. Methods Phys. Res.  B 219-20 (2004) 768. *     28. Shaltaf, R.: PhD. Thesis. The Middle East Technical Univ. 2004. *     29. Kirkby, I.K.: Encyclopedia Nanosci Nanotechnol. Vol. 4. American Sci 2004 Publ. ISBN: 1-58883-060-8. P. 1. 30. Shim, S.H.: J. American Ceramic Society 88 (2005) 2385. 31. Portesi, C.: IEEE Trans. Applied Supercond. 15 (2005) 3242. 32. Ochsenkuhn-Petropoulou, M.: J. Mater. Process. Technol. 161 (2005) 16. *     33. Goldacker W.: In: Frontiers in Supercond. Matreials. Berlin: Springer 2005. P. 1049. *     34. Koch, T.A.R.: PhD. Thesis. Chisinau: Moldavian Acad. Sci, Inst. Applied Phys. 2006. 35. Subhedar, K.M..: Physica C 450 (2006) 66. #     36. Vasek, P.: Physica Status Solidi (c) 3 (2006) 3096. 37. Zhu, H.M..: Physica C 452 (2007) 11. 38. Vasek, P.: Supercond. Sci Technol. 20 (2007) 67. 39. Xi, X.X.: Physica C 456 (2007) 22. #     40. Zdravkov, V.: J. Phys.: Conf. Series 61 (2007) 122, pp. 606-611. 41. Hanna, M.: Supercond. Sci Technol. 21 (2008) 045005. 42. Xi, X.X.: Supercond. Sci Technol. 22 (2009) 043001. 43. Hanna, M.: Supercond. Sci Technol. 22 (2009) 015024. 44. El-Hadek, M.A.: Strain 45 (2009) 506. 45. Kong, X.: Supercond. Sci Technol. 24 (2011) 105013. 46. Sahoo, B.: Supercond. Sci Technol. 25 (2012) 015004. 47. Dai, Q.: Physica C 475 (2012) 24. 48. Zhou, Z.: Adv. Mater. Res. 479-481 (2012) 1781. 49. Sarpi, B.: Applied Phys. Lett. 106 (2015) 021604. *    50. Wolak, M.A.: In MgB2 superconducting wires. Ed. R. Flückiger. New Jersey: World Sci Publ. 2016. ISBN978-981-4725-58-3. P. 49.

Gilabert, A., Plecenik, A., Fröhlich, K., Gaži, Š., Pripko, M., Mozolová, Ž., Machajdík, D., Beňačka, Š., Medici, M., Grajcar, M., and Kúš, P.: Photoinduced insulator–metal transition in La0.81MnO3/Al2O3/Nb tunnel junctions. Applied Phys. Lett. 78 (2001) 1712-1714.

1. Tulina, N.  A.: Europhysics Letters 56 (2001) 836. 2. Ziese, M.: Report on Progress in Phys. 65 (2002) 143. 3. Li, H.Q.: Materials Research Bulletin 37 (2002) 859. #    4. Singh, M.P.: Bulletin Materials Sci 25 (2002) 163. 5. Li, H.Q. Materials Research Bull. 37 (2002)  859. 6. Roy, S.: Solid State Commun. 128 (2003) 91. 7. Dorr, K.: J. Phys. D 39 (2006) R125. 8. Repsas, K.: Acta Physica Polonica A 110 (2006) 537. 9. Yan,  Z.J.: J. Phys. D 40 (2007) 2797. 10. Yan,  Z.J.: Applied Phys. Lett. 91 (2007) 104101. 11. Yuan, X. .: Applied Phys. Lett. 90 (2007) 224105. 12. Yan,  Z.J.: Chinese Phys. Lett. 24 (2007) 1397. 13. Ni, H.: J. Applied Phys. 110 (2011) 033112. #  14. Yu, D.: Proc. 2011 Inter. Conf. on Electr. Mechanical Engn. Inf. Technol. –  EMEIT 2011. Vol. 2 (2011) 6023151, p. 725. ISBN 978-161284085-7. #   15. Hu, L.: In Manganite-Based Thin Films and Heterojunctions. Nova Sci Publ. 2015. ISBN: 978-163482475-0. P. 105.

Štrbik, V., Chromik, Š., Beňačka, Š., Plecenik, A., and Gaži, Š.: Superconducting Tl- and Hg- based cuprate thin films, Measurement Sci Rev. 1 (2001) 53-56.

*     1. De Barros, D.: PhD. Thesis. Grenoble: UJF 2004.

Chromik, Š., Španková, M., Vávra, I., Gaži, Š., Cannaerts, M., Hellemans, L., Machajdík, D., Beňačka, Š., : CeO2 buffer layers on R-plane Al2O3 Acta Physica Slovaca 50 (2000) 403-410.

1. Valerianova, M.: Physica C 435 (2006) 31. 2. Duclere, J.R.: J. Applied Phys. 101 (2007) 013509. 3. Dujavová, A.: Central European J. Phys. 5 (2007) 229. 4. Sunder, M.: J. Electronic Mater. 38 (2009) 1931.

Španková, M., Vávra, I., Gaži, Š., Machajdík, D., Chromik, Š., Fröhlich, K., Hellemans, L., and Beňačka, Š.:Growth and recrystallization of CeO2 thin films deposited on R-plane sapphire by off-axis RF sputtering. J. Crystal Growth 218 (2000) 287-293.

1. Sayle, D.C.: J. Amer. Chem. Soc. 124 (2002) 11429. 2. Kim, C.J.: Physica C 386 (2003) 327. 3. Kim, H.-J.: IEEE Trans. Applied Supercond. 13 (2003) 2555. 4. Okuyucu, H.: IEEE Trans. Applied Supercond. 13 (2003) 2680. 5. Sun, J.W.: IEEE Trans. Applied Supercond. 13 (2003) 2539. 6. Penneman, G.: Key Engn. Materials 264-268 (2004) 501. *        7. Gàzquez, J.: IoP Conf. Ser. No 181 (2004) 1613. 8. Mozhaev, P.B.: Crystallography Reports 49 (2004) S129. 9. Sohma, M.: IEEE Trans. Applied Supercond. 15 (2005) 2699. 10. Sandiumenge, F.: Nanotechnology 16 (2005) 1809. 11. Huang, H.H.: J. Crystal Growth 287 (2006) 458. 12. Wesolowski, D.E.: J. Materials Research 21 (2006) 1. 13. Cavallaro, A.: Advanced Functional Mater. 16 (2006) 1363. 14. Develos-Bagarinao, K.: Nanotechnology 18 (2007) 165605. 15. Guo, H.: Applied Surface Sci 254 (2008) 1961. 16. Wu, F.: Thin Solid Films 516 (2008) 4908. 17. Masek, K.: Applied Surface Sci 255 (2009) 6656. 18. Matolin, V.: J. Phys. D 42 (2009) 115301. 19. Vaclavu, M.: J. Electrochem. Soc. 156 (2009) B938. 20. Sunder, M.: J. Electr. Mater. 38 (2009) 1931. 21. Solovyov, V.F.: Physical Rev. B 80 (2009) 104102. 22. You, F.: Supercond. Sci Technol. 23 (2010) 065002. 23. Smatko, V.: J. Mater. Sci 21 (2010) 360. 24. Matolin, V.: Fuel Cells 10 (2010) 139. 25. Liu, H.: Proc. SPIE 7995 (2011) 799521. 26. Abal’osheva, I.: Acta Phys. Polonica A 121 (2012) 805. 27. Matolin, V.: Inter. J. Nanotechnol. 9 (2012) 680. #     28. Wang, G.: Zhenkong Kexue yu Jishu Xuebao/ Vacuum Sci Technol. 34 (2014) 549. 29. Develos-Bagarinao, K.: Nanotechnol. 26 (2015) 215401. #      30. Develos-Bagarinao, K.: In Oxide Thin Films, Multilayers, and Nanocomp. Springer 2015 ISBN: 978-3-319-14477-1. P. 213. 31. Hattori, T.: J. Crystal Growth 463 (2017) 90. 32. Yamamoto, S.: J. Crystal Growth 468 (2017) 262.

Beňačka, Š., Štrbik, V., Chromik, Š., Adam, R., Darula, M., and Gaži, Š.: Mechanisms of critical current limitation in YBCO thin film structures, Low Temp. Phys. 24 (1998) 468.

1. Petrov, M.I.: Physics Solid State 44 (2002) 1229. 2. Petrov, M.I.: Physics Solid State 49 (2007) 626. 3. Jones, W.A.: Applied Phys. Lett. 97 (2010) 262503.

Gaži, Š., Španková, M., Vávra, I., Juhás, P., Chromik, Š., Štrbik, V., Beňačka, Š., : Structural and electrical properties of YBa2Cu3O7-x films prepared on (110) SrTiO3 single crystal or buffered layers Vacuum 51 (1998) 145.

     1. Benzi, P.: J. Chemical Sci 119 (2007) 631.

Gaži, Š.,  Štrbík, V., and Beňačka,  Š.: Nonequilibrium phenomena in non-symmetrical superconducting double-barrier structure Nb/NbOx/Al/AlOx/Nb, J. of Low Temp.Phys. 106 (1997) 387.

1. Muduli, P. K.: Phys. Rev. B 96 (2017) 024514.

Vávra, I., Lobotka, P., Dérer, J., Gaži, Š., Wallenberg, L., Holý, V., Kubena, A., Sobota, J., : Stacked Josephson junction based on Nb/Si superlattice, J. Low Temper. Phys. 106 (1997) 373.

1. Kuplevashky, S.V.: Phys. Rev. B 56 (1997) 7858. 2. Kuplevashky, S.V.: Phys. Rev. B 60 (1999) 7496. 3. Yusuf, S.M.: J. Magnetism Magnetic Mater. 199 (1999) 564. *   4. Vávra, O.: Kand. diz. práca. Bratislava, ElÚ SAV 2002. 71 s. 5. Kashyap, S.: Thin Solid Films 531 (2013) 312. 6. Xing, J.: Applied Phys. Lett. 104 (2014) 163105.

Španková, M., Gaži, Š., Chromik, Š., Rosová, A., Vávra, I., and Beňačka, Š.: The problems of native SiO2 removing for epitaxial growth of YSZ film on Si, J. Low Phys. 106 (1997) 439.

1. Hartmanová, M.: Thin Solid Films 345 (1999) 330. 2. Hartmanová, M.: Solid State Ionics 130 (2000) 105. 3. Ishigaki, H.: J. Ceramic Soc Japan 109 (2001) 766. 4. Ishigaki, H.: J. Ceramic Soc Japan 110 (2002) 333.

Lobotka, P., Vávra, I., Gaži, Š., Dérer, J., : Vertically stacked (Nb/Si) 10 Josephson Junction Czechoslovak J. Phys. 46 (1996) 701.

      1. Fedorenko, A.I.: J. Experimen. Theoretical Phys. 90 (2000) 1010.

Adam, R., Beňačka, Š., Štrbik, V., Chromik, Š., Gaži, Š., Kostič, I., Pinčík, E., : YBa2Cu3O step edge junctions prepared on buffered sapphire substrates with ASZ buffer layer, IEEE Trans. Applied Supercond. 5 (1995) 2774.

1.Gilabert, A.: J. Low Temp. Phys. 106 (1997) 255. 2. Konsin, P.: Phys. Rev. B 58 (1998) 5795. 3. Kim, I.S.: Japanese J. Applied Phys. 38 (1999) L1532. 4. Lim, H.R.: IEEE Trans. Applied Supercond. 11 (2001) 1355. 5. Seidel, P.: J. Supercond. 14 (2001) 305. 6. Lutciv, R.: Physica C 372 (2002) 1195. 7. Tafuri, F.: Reports Progress Phys. 68 (2005) 2573. 8. Okunev, V.D.: Technical Phys. Lett. 31 (2005) 591.

Lobotka, P., Vávra, I., Machajdík, D., Jergel, M., Gaži, Š., Rosseel, E., Baert, M., Bruynseraede, Y., Forsthuber, M., and Hilscher, G.: Commensurate vortex lattice in superconducting Nb/Ti multilayers, Physica C 229 (1994) 231.

1. Ziese, M.: Phys. Rev. B 53 (1996) 8658. 2. Carneiro, G.: Phys. Rev. B 57 (1998) 6077. 3. Lehrer, R.A.: Phys. Rev. B 58 (1998) 12385. 4. Berger, J.: Phys. Rev. B 59 (1999) 8896. 5. Han, SW.: Phys. Rev. B 62 (2000) 9784. 6. Fogel, N.Y.: Low Temp. Phys. 27 (2001) 752. 7. Silva, C.C.D.: Physica C 354 (2001) 232. 8. Han, S.W.: J. Korean Phys. Soc. 42 (2003) 394. 9. Han, S.W.: Physica B 336 (2003)162. 10. Eisenmenger, J.: Physica C 411 (2004) 136. 11. Gavrilkin, S.Y.: Supercond. Sci Technol. 23 (2010) 065019.

Adam, R., Štrbik, V., Beňačka, Š., Chromik, Š., Tomáš, P., Gaži, Š., Darula, M., Šmatko, V., Hrubčín, L., Hudek, P., Kostič, I., Pinčík, E., : YBa2Cu3Ox step edge junctions on buffered substrates. In: EUCAS 93. Ed. H.C.Freyhardt. Oberursel: DGM, 1993. P. 1147.

*    1. Seidel, P.: Weak Superconductivity. Bratislava: IEE SAS 1994. P. 13.

Beňačka, Š., Maheľ, M., Gaži, Š., Chromik, Š., : Microwave absorption in YBa2Cu3Ox granular thin films at dc magnetic fields Bulletin Mater. Sci 14 (1991) 783.

    1. Ma, Z.: Applied Surface Sci 255 (2009) 6629.

Štrbik, V., Beňačka, Š., Gaži, Š., Chromik, Š., Levársky, J., Sith, J., : The temperature dependence of resistance and critical current in granular YBa2Cu3Ox superconducting films, Modern Phys. Lett. B 3 (1989) 729.

1. Don, S.X.: Supercond. Sci Technol. 3 (1990) 138. 2. Vad, K.: Cryogenics 30 (1990) 660.

Beňačka, Š., Svistunov, V., Plecenik, A., Chromik, Š., Gaži, Š., Levársky, J., Štrbik, V., Takács, S., : Tunneling spectroscopy in thin films YBaCuO/Pb tunnel structures, IEEE Trans. Magnetics 25 (1989) 2583.

1. Seidel, P.: Phys. Status Solidi A 122 (1990) 645. *    2. Seidel, P.: Proc. 22nd Int. Symp. Supercond. & Cryoel. Georgenthal: 1990. P. 68. 3. Walsh, T.: Phys. Rev. Lett. 66 (1991) 516. 4. Walsh, T.: Inter. Mod. Phys. B 6 (1992) 125. *    5. Hasegawa, T.:  Physical  Properties of High Temperature Superconductors III. 1992. 6. Sarapatka, T.J.: Applied Surface Sci. 68 (1993) 35.

Chromik, Š., Štrbik, V., Beňačka, Š., Levársky, J., Sith, J., Plecenik, A., Gaži, Š., Šmatko, V., Schilder, J., : YBaCuO superconducting thin films prepared by vacuum coevoparation without post treatment in oxygen, IEEE Trans. Magnetics 25 (1989) 2484.

1. Evets, J.E.: Thin Solid Films 174 (1989) 165. *    2. Jergel, M.: Studies of High Temp. Supercond. 5. NewYork: Nova Sci. Publ. 1990. P.293. *    3. Jergel, M.: Elektrotechn. časopis 41 (1990) 727. 4.  Somekh, R.E.:  Progress  in  High Temperature  Supercond. 24. Singapore: World Sci. 1990. P.257.

Beňačka, Š., Svistunov, V., Plecenik, A., Chromik, Š., Gaži, Š., : Tunneling spectroscopy in thin films superconducting junctionsYBCO/Pb, Solid State Comm. 68 (1988) 753.

1. Takács, S.: Czechosl. J. Phys. 39 (1989) 680. 2. Takács, S.: Mod. Phys. Lett. B 3 (1989) 421. 3. Takács, S.: Physica C 165 (1990) 91. *    4. Srimivasan,  R.: Studies High Temperature Supercond. 4. New York: Nova Sci. Publ. 1990. P. 265. *    5. Takács, S.: Weak Supercond.  New York: Nova Sci. Publ. 1990. P. 117 *    6. Averin, D.V.: Mesoscopic Phenomena in Solids. Amsterdam: North-Holland 1991. P. 173. *    7. Hasegawa, T.:  Physical  Properties  of  High Temperature Superconductors III. Ed. D.M.Ginsberg. 1992. 8. Sarapatka, T.J.: Applied Surface Sci 68 (1993) 35. 9. Greene, L.H.: Physica C 387 (2003) 162. 10. Hentges, P.J.: IEEE Trans. Applied Supercond. 13 (2003) 801. 11. Greene, L.H.: J. Mater. Chemistry 14 (2004) 3158.

Beňačka, Š., Bezáková, Ľ., Gaži, Š., Takács, S., Palaj, J., : Properties of long superconducting variable thickness bridges. I. DC and AC Josephson effect, Czechosl. J. Phys. B 28 (1978) 192.

1. Cesnak, L.: Acta Phys. Hungarica 50 (1981) 153. *    2. Blaney, T.G.: Natl.  Phys. Lab. Rept. No.89/0382. Teddington:  1978. *    3. Barone, A.:  Physics and Applied of the  Josephson Effect. New York: 1982.

Beňačka, Š., Bezáková, Ľ., Gaži, Š., Takács, S., and Palaj, J.: Properties of long superconducting variable thickness bridges. II. Influence of static magnetic field, Czechoslov. J. Phys. B 28 (1978) 203.

1. Cesnak, L.: Acta Phys. Hungarica 50 (1981) 153. *    2. Barone, A.:  Physics and Applied of the  Josephson Effect. New York: 1982. 3. Lykov, A.N.: Uspechi fizič. nauk 162 (1992) 1. 4. Lykov, A.N.: Adv. Phys. 42 (1993) 263.

Beňačka, Š., Bezáková, Ľ., Gaži, Š., Takács, S., and Palaj, J.: Josephson effect in long superconducting bridges with variable thiskness, Solid State Comm. 24 (1977) 717.

1. Cesnak, L.: Acta Phys. Hungarica 50 (1981) 153. *    2. Blaney, T.G.: Natl.  Phys. Lab. Rept. No.89/0382. Teddington: 1978. *    3. Barone, A.: Phys. and Applied of Josephson  Effect. New York: 1982. 4. Suderow, H.: Supercond. Sci Technol. 27 (2014) 063001.