Ing. Kúdela Róbert, CSc.

Kučera, M., Adikimenakis, A., Dobročka, E., Kúdela, R., Ťapajna, M., Laurenčíková, A., Georgakilas, A., and Kuzmík, J.: Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates, Thin Solid Films 672 (2019) 114-119.

1. Andreev, B.A.: Semiconductors 53 (2019) 1357. 2. Cross, G. B.: J. Crystal Growth 536 (2020) 125574. 3. Wang, S.: Coatings 10 (2020) 1185. 4. Damas, G.B.: Applied Surface Sci 592 (2022) 153290. #    5. Cao, B.: Adv. Function. Mater. 32 (2022) 2110715.

Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, J., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I.V., Dobročka, E., and Gregušová, D.: Technology and application of in-situ AlOx layers on III-V semiconductors, Applied Surface Sci 461 (2018) 33-38.

1. Sa, Z.X.: Adv. Functional Mater. 33 (2023) Iss. 38.

Gucmann, F., Kúdela, R., Rosová, A., Dobročka, E., Mičušík, M., and Gregušová, D.: Optimization of UV-assisted wet oxidation of GaAs, J. Vacuum Sci Technol. B 35 (2017) 01A116.

1. Toyoshima, R.: Chem. Comm. 56 (2020) 14905. 2. Wang, J.J.: Mater. Sci Semicond. Process. 159 (2023) 107372.

Kuzmík, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., and Georgakilas, A.: Current conduction mechanism and electrical break-down in InN grown on GaN, Applied Phys. Lett. 110 (2017) 232103.

1. Shen, L.: Applied Surface Sci 476 (2019) 418.

Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., and Kordoš, P.:Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment,. Applied Surface Sci 395 (2017) 140-144.

1. Silva, J.C.F.: J. Molecular Model. 23 (2017) 204. 2. Kumar, J.: J. Alloys Compounds 727 (2017) 1089. 3. Sharma, I.: J. Alloys Compounds 723 (2017) 50. 4. Zhou, Y.: J. Colloid Interface Sci 560 (2020) 769. #    5. Panda, S.: Proc. DevIC 2021, pp. 71-74. 6. Gil-Corrales, J.A.: Inter. J. Molecular Sci 23 (2022) 5169. 7. Panda, S.R.: Physica Scripta 97 (2022) 114006. 8. Panda, S.R.: Physica Scripta 98 (2023) 125984.

Ščepka, T., Polakovič, J., Šoltýs, J., Tóbik, J., Kulich, M., Kúdela, R., Dérer, J., and Cambel, V.: Individual vortex nucleation/annihilation in ferromagnetic nanodots with broken symmetry observed by micro/Hall magnetometry, AIP Adv. 5 (2015) 117205.

1. Ehrmann, A.: J. Magnetism Magnetic Mater. 475 (2019) 727.

Gucmann, F., Kúdela, R., Kordoš, P., Dobročka, E., Gaži, Š., Dérer, J., Liday, J., Vogrinčič, P., and Gregušová, D.: III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap, J. Vacuum Sci Technol. B 33 (2015) 01A111.

1. Grabnic, T.: Surface Sci 692 (2020) 121516.

Kuzmík, J., Haščík, Š., Kučera, M., Kúdela, M., Dobročka, E., Adikimenakis, A., Mičušík, M., Gregor, M., Plecenik, A., and Georgakilas, A.: Elimination of surface band bending on N-polar InN with thin GaN capping, Applied Phys. Lett. 107 (2015) 191605.

1. Lund, C.: J. Applied Phys. 123 (2018) 055702. 2. Pfusterschmied, G.: Proc. IEEE Micro Electro Mechan. Systems 2019, pp. 735-738. 3. Park, B.-G.: Nanotechnol.‏ 31 (2020) 335503.

Gucmann, F., Gregušová, D., Stoklas, R., Dérer, J., Kúdela, R., Fröhlich, K., and Kordoš, P.: InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator, Applied Phys. Lett. 105 (2014) 183504.

1. Kim, S.-H.: IEEE Electron Device Lett. 36 (2015) 884. 2. Kim, S.-H.: J. Nanosci Nanotechnol. 16 (2016) 10389. 3. Akazawa, M.: Phys. Status Solidi B 254 (2017) 1600691. 4. Bazaka, K.: Nanoscale 10 (2018) 17494. 5. Kim, S.-H.: ACS Applied Mater. Interfaces 10 (2018) 26378.

Kúdela, R., Šoltýs, J., Vincze, A., Novák, J., : Tellurium delta-doped InGaP layers grown by metalorganic vapour phase epitaxy. Phys. Status Solidi RRL 7 (2013) 443–446.

1. Gibson, B.: J. Anal. Atomic Spectrom. 29 (2014) 1969. 2. Bedair, S.M.: Applied Phys. Lett. 108 (2016) 203903. 3. Li, B.: J. Applied Phys. 134 (2023) 065702.

Kordoš, P., Kúdela, R., Stoklas, R., Čičo, K., Mikulics, M., Gregušová, D., and Novák, J.: Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition. Applied Phys. Lett. 100 (2012) 142113.

1. Wang, L.S.: Applied Phys. Lett. 103 (2013) 092901. 2. Wang, L.-S.: Applied Phys. Express 7 (2014) 061201. 3. Aoki, T.: Applied Phys. Express 7 (2014) 106502. 4. Liu, L. N.: Applied Phys. Lett. 107 (2015) 213501. 5. Liu, L.: J. Vacuum Sci Technol. B 33 (2015) 050601. 6. Liu, L.N.: Physica Status Solidi-R 10 (2016) 703. 7. Moille, G.: Laser & Photonics Rev. 10 (2016) 409. 8. Liu, L. N.: Applied Phys. Lett. 110 (2017) 123506. 9. Liu, L.N.: Physica Status Solidi-R 11 (2017) 1700180. 10. Liu, L.N.: IEEE Trans. Electron Dev. 65 (2018) 72. 11. Izsak, T.: Mater. Sci Engn. B 273 (2021) 115434. 12. Vimala, P.: Inter. J. Comput. Mater. Sci Engn. 10 (2021) 2150021.

Martaus, J., Cambel, V., Gregušová, D., Kúdela, R., Fedor, J., : 50-nm local anodic oxidation technology of semiconductor heterostructures. J. Nanosci Nanotechnol. 10 (2010) 4448-4453.

      1. Chu, H.: J. Nanosci Nanotechnol. 13 (2013) 8055.

Kúdela, R., Kučera, M., Dobročka, E., Šoltýs, J., : AlGaAs/InGaP interfaces in structures prepared by MOVPE. J. Crystal Growth 311 (2009) 3123-3129. (APVV 51-045705).

       1. Farag, A.A.M.: J. Alloys Compounds 509 (2011) 8056.

Gregušová, D., Martaus, J., Fedor, J., Kúdela, R., Kostič, I., and Cambel, V.: On-tip sub-micrometer Hall probes for magnetic microscopy prepared by AFM lithography. Ultramicroscopy 109 (2009) 1080-1084.

1. Wang, L.: Nanoscale Res. Lett. 11 (2016) 342. 2. Liu, Z.-G.: IEEE Access 7 (2019) 79103. 3. Collomb, D.: J. Phys.-Cond. Matt. 33 (2021) 243002.

Cambel, V., Martaus, J., Šoltýs, J., Kúdela, R., Gregušová, D., : Local anodic oxidation by AFM tip developed for novel semiconductor nanodevices. Ultramicroscopy 108 (2008) 1021-1024.

       1. Voves, J.: Microelectr. Engn. 86 (2009) 561. 2. Simeone, F.C.: J. Phys. Chem. C 113 (2009) 18987. #    3. Abdullah, A.M.: Inter. J. Nanosci 9 (2010) 251. #    4. Hu, K.: Inter. J. Nanomanufact. 9 (2013) 19.

Martaus, J., Gregušová, D., Cambel, V., Kúdela, R., Šoltýs, J., : New approach to local anodic oxidation of semiconductor heterostructures. Ultramicroscopy 108 (2008) 1086-1089.

1. Pust, S.E.: Nanotechnology 20 (2009) 075302. 2. Simeone, F.C.: J. Phys. Chem. C 113 (2009) 18987. 3. Janousek, M.: Microelectr. Engn. 87 (2010) 1066. #     4. Hu, X.-D.: Nami Jishu yu Jingmi Gongcheng/Nanotechnol. Precision Engn. 8 (2010) 352. #     5. Abdullah, A.M.: Inter. J. Nanosci 9 (2010) 251. #    6. Tian, L.: Scientia Sinica Chimica 49 (2019) 455.

Cambel, V., Martaus, J., Šoltýs, J., Kúdela, R., Gregušová, D., : AFM nanooxidation process – technology perspective for mesoscopic structures. Surface Sci. 601 (2007) 2717-2723. (APVV 51-045705).

   1. Parisse, P.: Mater. Sci Engn. B 165 (2009) 227. 2. Jo, Y.D.: Applied Phys. Lett. 96 (2010) 082105. 3. Bukauskas, V.: Surface Interface Anal. 42 (2010) 991. 4. Lin, C.W.: Applied Surface Sci 264 (2013) 280. 5. Han, C.: Bull. Korean Chem. Soc 36 (2015) 1024. 6. Batkova, M.: Europ. Phys. J.-Applied Phys. 73 (2016) 30301. 7. Mollick, S.A.: Nanotechnol. 27 (2016) 435302.

Cambel, V., Karapetrov, G., Novosad, V., Bartolome, E., Gregušová, D., Fedor, J., Kúdela, R., Šoltýs, J., :Novel Hall sensors developed for magnetic field imaging systems. J. Magnetism Magn. Mater. 316 (2007) 232-235. (APVV 51-045705).

        1. Cheng, Y.H.: Physical Rev. B 80 (2009) 174412. 2. Tian, W.: Rev. Sci Instrum. 84 (2013) 035004.

Šoltýs, J., Cambel, V., Kúdela, R., Eliáš, P., : Study into the shape of oxide lines formed by LAO – influence an oxidized material. Surface Sci 601 (2007) 2876-2880.

   1. Kim, T.Y.: Surface Sci 601 (2007) 4910.

Gregušová, D., Eliáš, P., Öszi, Z., Kúdela, R., Šoltýs, J., Fedor, J., Cambel, V., Kostič, I., : Technology and properties of a vector hall sensor. Microelectronics J. 37 (2006) 1543-1546.

#     1.Rybak, M.: Przeglad Wlokienniczy 61 (2007) 39. 2. Dai, C.-L.: Microelectronics J. 39 (2008) 744. 3. Peters, V.: IEEE Trans. Magn. 49 (2013) 109. 4. Dede, M.: Applied Phys. Lett. 109 (2016) 182407.

Kordoš, P., Kúdela, R., Gregušová, D., Donoval, D., : The effect of passivation on the performance of AlGaN/GaN heterostructure field-effect transistors. Semicond. Sci Technol. 21 (2006) 1592-1596.

1. Shiu, J.Y.: Semicond. Sci Technol. 22 (2007) 717. 2. Adamowicz, B.: Optica Applicata 37 (2007) 327. #     3. Kaminska, E.: MRS Symp. Proc. 1035 (2008) 104. 4. Romero, M.F.: IEEE Electron Device Lett. 29 (2008) 209. 5. Desmaris, V.: Solid-State Electron. 52 (2008) 632. 6. Kurakin, A.M.: J. Applied Phys. 103 (2008) art. no. 083707. 7. Shim, J.: J. Electrochem. Soc. 156 (2009) H68. #     8. Chevtchenko, S.A.: 2011 Inter. Conf. Compound Semicond. Manufact. Technol. 100648. 9. McKerracher, I.R.: J. Phys. D 43 (2010) 335104. 10. Cho, S.-J.: Thin Solid Films 520 (2012) 4455. 11. McKerracher, I.: J. Applied Phys. 112 (2012) 113511. 12. Liao, S.Y.: J. Nanosci Nanotechnol. 14 (2014) 6243. 13. Mutta, G.R.: Semicond. Sci Technol. 29 (2014) 095010. 14. Liao, S.Y.: J. Nanosci Nanotechnol. 14 (2014) 6243. 15. Zhang, B.: Applied Phys. Lett. 106 (2015) 093506. 16. Jabli, F.: J. Alloys Compounds 650 (2015)  533. 17. Singh, Sarab P.: J. Phys. D 48 (2015) 365104. 18. Kara, D.: Proc. ASME 2017. Art. No.UNSP V001T04A011. 19. Gulseren, M.E.: Mater. Res. Express 6 (2019) 095052. 20. Khan, D.: Micromachines 11 (2020) 680. 21. Khan, D.: ACS Sensors 5 (2020)‏ 3124.

Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., : Growth and characterisation of InxGa1-xP layers with composition close to crossover from direct to indirect band gap. J. Crystal Growth 275 (2005) e1281-e1286.

     1. Wolos, A.: Spintronics 82 (2008) 325. 2. Kovac, J.: More Than Moore: Creating High Value Micro/Nanoelectr. Systems. Springer 2009. ISBN 0387755926.  P. 203-238. 3. Lankinen, A.: J. Crystal Growth 311 (2009) 4619. 4. Jenichen, A.: Physica Status Solidi B 247 (2010) 59. 5. Nicklas, J.W.: Applied Phys.Lett. 97 (2010) 091902. 6. Norizan, M. N.: IOP Conf. Ser.-Mater. Sci Engn. 209 (2017) 012029.

Pelosi, C., Attolini, G., Frigeri, P., Bersani, M., Giubertoni, D., Vanzetti, L., Kúdela, R., : In-depth analysis of the interfaces in InGaP/GaAs heterosystems European Physical J. 27 (2004) 379-383.

       1. Laserna, J. J.: IOP Conf. Ser.-Mater. Sci Engn. 59 (2014) 012002.

Kicin, S., Kromka, A., Kúdela, R., Hasenöhrl, S., Schwarz, A., Novák, J., : Micro-Raman study of InGaP composition grown on V-grooved substrates. Materials Sci Engn. B 113 (2004) 111-116.

1. Smyth, T.: IEEE J. Photovolt. 6 (2016) 166. 2. Yaccuzzi, E.: J. Phys. D 54 (2021) 115302.

Cambel, V., Gregušová, D., Fedor, J., Kúdela, R., Bending, S., : Scanning vector Hall probe microscopy. J. Magnetism Magnetic Mater. 272-276 (2004) 2141-2143.

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Hasenöhrl, S., Novák, J., Kúdela, R., Betko, J., Morvic, M., Fedor, J., : Anisotropy in transport properties of ordered strained InGaP. J. Crystal Growth 248 (2003) 369.

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Gregušová, D., Cambel, V., Fedor, J., Kúdela, R., Šoltýs, J., Lalinský, T., Kostič, I., Bending, S., : Fabrication of a vector Hall sensor for magnetic microscopy. Applied Phys. Lett. 82 (2003) 3704-3706.

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Cambel, V., Gregušová, D., Kúdela, R., : Formation of GaAs three-dimensional objects using AlAs “facet-forming” sacrificial layer and H3PO4, H2O2, H2O based solution. J. Applied Phys. 94 (2003) 4643-4648.

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Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., Alonso, M., Garriga, M., : Influence of ordered and random parts on properties of InGaP alloy grown by MOVPE. In: EW MOVPE X. Univ. Lecce 2003. P. 161.

      1. Zakaria, A.: J. Applied Phys. 108 (2010) 074908.

Hasenöhrl, S., Kúdela, R., Novák, J., Tuomi, T., Knuuttila, L., : Anisotropic surface structure in ordered strained InGaP. Materials Sci Engn. B 88 (2002) 134-138.

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Novák, J., Hasenöhrl, S., Kúdela, R., Kučera, M., Alonso, M., Garriga, M., : Effect of strain and ordering on the band-gap energy of InGaP. Materials Sci Engn. B 88 (2002) 139-142.

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Kúdela, R., Kučera, M., Novák, J., Ferrari, C., Pelosi, C., : Study of narrow InGaP/(In)GaAs quantum wells. J. Crystal Growth 242 (2002) 132-140.

      1. Begotti, M.: Applied Surface Sci 222 (2004) 423. *    2. Gladkov, P.: ASDAM 2004. Piscataway: IEEE 2004. S. 17. 3. Saly, V.: Renewable Energy 31 (2006) 865. 4. Ichikawa, O.: J. Crystal Growth 298 (2007) 85. 5. Longo, M.: J. Crystal Growth 311 (2009) 4293.

Kuzmík, J., Hasenöhrl, S., Kúdela, R., Haščík, Š., Mozolová, Ž., Lalinský, T., Breza, J., Vogrinčič, P., Škriniarová, J., Fox, A., Kordoš, P., : InGaAs/InGaP HEMTs: technological optimization and analytical modelling. Vacuum 61 (2001) 333-337.

      1. Li, A.Z.: J. Crystal Growth 251 (2003) 816.

Longo, M., Parisini, A., Tarricone, L., Toni, L., Kúdela, R., : Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers. Materials Sci & Engn. B 86 (2001) 157-164.

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Attolini, G., Bocchi, C., Germini, F., Pelosi, C., Parisini, A., Tarricone, L., Kúdela, R., Hasenöhrl, S., : Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE Materials Chemistry & Physics 66 (2000) 246-252.

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Kúdela, R., Kučera, M., Olejníková, B., Eliáš, P., Hasenöhrl, S., Novák, J., : Formation of interfaces in InGaP/GaAs/InGaP quantum wells. J. Crystal Growth 212 (2000) 21-28.

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