Gucmann, F., Meng, B., Chvála, A., Kúdela, R., Yuan, C., Ťapajna, M., Florovič, M., Egyenes, F., Eliáš, P., Hrubišák, F., Kováč, J.Jr., Fedor, J., and Gregušová, D.: Improved thermal performance of InGaAs/GaAs nanomembrane HEMTs transferred onto various substrates by epitaxial lift-off, ACS Applied Electron. Mater. 6 (2024) 5651–5660.
1. Wang, J.Q.: J. Mater. Process. Technol. 337 (2025) 118712.
2. Zhang, J.Y.: Mater. Res. Express 12 (2025) 025902.
3. Inoch, W.F.: Nanoscale 17 (2025) 15279.
Hrubišák, F., Hušeková, K., Zheng, X., Rosová, A., Dobročka, E., Ťapajna, M., Mičušík, M., Nádaždy, P., Egyenes, F., Keshtkar, J., Kováčová, E., Pomeroy, J.W., Kuball, M., and Gucmann, F.: Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices, J. Vacuum Sci Technol. A 41 (2023) 042708.
1. Woo, K.: J. Phys.-Mater. 7 (2024) 022003.
2. Vo, T.H.: Mater. Sci Semicond. Process. 173 (2024) 108130.
3. Akyol, F.: Mater. Sci Semicond. Process. 170 (2024) 107968.
4. Saquib, T.: J. Applied Phys. 135 (2024) 065701.
5. Hu, Y.: Mater. Sci Semicond. Process. 178 (2024) 108453.
6. Ferdous, N.: Sci Rep. 14 (2024) 12748.
7. Ku, C.W.: Applied Surface Sci Adv. 24 (2024) 100661.
8. Su, J.: J. Mater. Sci Technol. 210 (2025) 20.
9. Tarntair, F.G.: Adv. Electron. Mater. 11 (2025) SI2300679.
10. Chen, J.T.: IEEE J. Electron Dev. Soc 13 (2025) 570.
11. Wu, K.P.: J. Applied Phys. 137 (2025) 105701.
12. Kumar, M.: Applied Phys. Lett. 126 (2025) 193505.
13. Park, J.H.: J. Mater. Chem. C 13 (2025) 13464.
14. Wei, M.Y.: Surfaces Interfaces 66 (2025) 106607.
Egyenes, F., Gucmann, F., Rosová, A., Dobročka, E., Hušeková, K., Hrubišák, F., Keshtkar, J., and Ťapajna, M.: Conductance anisotropy of MOCVD-grown α-Ga2O3 films caused by (010) β-Ga2O3 filament-shaped inclusions, J. Phys. D: Appl. Phys. 56 (2023) 045102.
1. Kim, C.: ACS Applied Mater. Interfaces 17 (2025) 41215.
Dobročka, E., Gucmann, F., Hušeková, K., Nádaždy, P., Hrubišák, F., Egyenes, F., Rosová, A., Mikolášek, M., and Ťapajna, M.: Structure and thermal stability of ε/κ-Ga2O3 films deposited by liquid-injection MOCVD, Materials 16 (2023) 20.
1. Girolami, M.: J. Mater. Chem. C 11 (2023) 3759.
2. Aarik, L.: Crystal Growth Design 23 (2023) 5899.
3. Chen, S.J.: J. Alloys Comp. 989 (2024) 174388.
4. Woo, K.: J. Phys.-Mater. 7 (2024) 022003.
5. He, Y.J.: Mater. 17 (2024) 1870.
6. Hu, Y.: Mater. Sci Semicond. Process. 178 (2024) 108453.
7. Aarik, L.: J. Mater. Chem. C 12 (2024) 10562.
8. Banda, Y.: AIP Adv. 14 (2024) 115019.
9. Xu, K.: Mater. Sci Semicond. Process. 185 (2025) 108874.
10. Kung, P.K.: Mater. Today Adv. 26 (2025) 100589.
11. Askarzadeh, N.: Results Chem. 16 (2025) 102390.
12. Pozina, G.: J. Crystal Growth 668 (2025) 128289.
13. Chen, J.H.: Applied Surface Sci 710 (2025) 163959.
14. Almaev, A.V.: Sensors Actuators B 444 (2025) 138355.