RNDr. Jaroslava ŠAFRÁNKOVÁ, CSc.

1998 Huran, J., Šafránková, J., and Kobzev, A.P.: Preparation of hydrogenated amorphous silicon carbide thin films by plasma enhanced chemical vapour deposition, Vacuum 50 (1998) 103. Šafránková, J., Huran, J., Hotový, I., Kobzev, A.P., and Korenev, S.A.: Characterization of nitrogen-doped amorphous silicon carbide thin films, Vacuum 51 (1998) 165. 1995 Porges, M., Šafránková, J., Lalinský, T., Kostič, I., Rangelow, I.W., Tegude, F.J.: Asymmetric (Schottky — Ohmic) MSM photodetector, Solid State Electr. 38 (1995) 425. 1993 Šafránková, J., Porges, M., Lalinský, T., Mozolová, Ž., Hudek, P., Kostič, I., Kraus, J., von Wendorff, W., Tegude, F.J., and Jäger, D.: Photoelectrica l properties of GaAs MSM photodetector compatible with pseudomorphic heterostructure MESFET, Physica Status Solidi A 140 (1993) K111. Porges, M., Lalinský, T., Šafránková, J., Hudek, P., Kraus, J., Tegude, F.J., von Wendorff, W., and Jäger, D.: GaAs MSM photodiode using the highly doped channel layer of a heterostructure MESFET, Physica Status Solidi A 136 (1993) K65. 1992 Hrubčín, L., Šafránková, J., and Hudek, P.:Effect of proton bombardement on the dark current of GaAs MSM structures, Physica Status Solidi A 133 (1992) K53. 1987 Šafránková, J. and Kordoš, P.: Photocurrent multiplicaion in GaAs Schottky photodiodes, Solid-State Electr. 30 (1987) 93.