RNDr. Božena OLEJNÍKOVÁ (Ďurovová), CSc.

2000 Kúdela, R., Kučera, M., Olejníková, B., Eliáš, P., Hasenöhrl, S., and Novák, J.: Formation of interfaces in InGaP/GaAs/InGaP quantum wells, J. Crystal Growth 212 (2000) 21-28. 1998 Cambel, V., Olejníková, B., Eliáš, P., Kúdela, R., Novák, J., and Kučera, M.: Microscopic 2DEG linear Hall probe arrays, Superlattices Microstruc. 24 (1998) 181. Cambel, V., Eliáš, P., Kúdela, R., Novák, J., Olejníková, B., Mozolová, Ž., Majoroš, M., Kvitkovič, J., and Hudek, P.: Preparation, characterization and application of microscopic Hall probe arrays, Solid State Electron. 42 (1998) 247. Cambel, V., Gregušová, D., Eliáš, P., Hasenöhrl, S., Olejníková, B., Novák, J., Kučera, M., Shapers, T., Neurohr, K., and Fox, A.: Characterization of InGaAs/InP microscopic Hall probe arrays with 2DEG active layer, Mater. Sci Engn. B 51 (1998) 188. 1997 Olejníková, B.: Spin-orbit-couting, electric-field and free-carrier-screening effects on valence band structure of strained quantum wells, Acta Physica Polonica A 92 (1997) 940. 1993 Olejníková, B.: Electric-field and screening dependence of exciton binding-energy in asymmetric double-quantum-well, Superlattices Microstr. 14 (1993) 215-220. Olejníková, B.: Asymmetric double well in an electric-field as a single quantum-mechanical problem, Semicond. Sci Technol. 8 (1993) 525-529. 1991 Dubecký, F. and Olejníková, B.: C-V analysis of the Schottky barrier inmsemi-insulating semiconductors, J. Applied Phys. 69 (1991) 1769. 1985 Olejníková, B.: Calculation of field-induced phenon-assisted tunnel ionization of deep centres in GaAs using the quantum defect method, Czechoslov. J. Phys. B 35 (1985) 585. Olejníková, B.: A method of determination of the trap depth of deep centres by capacitance measurements, Phys. Status Solidi a 89 (1985) K197. 1984 Olejníková, B.: Non-exponential capacitance transient due to field-enhanced emission of electrons from deep traps, Phys. Status Solidi A 84 (1984) 621. 1981 Olejníková, B., Hrivnák, L., and Kedro, M.: The model potential for charged centers in semiconductors, Phys. Status Solidi b 107 (1981) 451. Olejníková, B.: The influence of the electric field on the electron capture coeffecient of screened Coulomb centers, Phys. Status Solidi b 108 (1981) 79. 1979 Hrivnák, L. and Ďurovová, B.: High-field capture of electrons by screened coulomb attractive center, Phys. Status Solidi b 92 (1979) K99.