Ing. Michal BLAHO, PhD.

 

  • 2017
Blaho, M., Gregušová, D., Haščík, Š., Ťapajna, M., Fröhlich, K., Šatka, A., Kuzmík, J., : Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs. Applied Phys. Lett. 111 (2017) 033506. (APVV 15-0673). (CENTE).

 
Brytavskyi, I., Gregušová, D., Ťapajna, M., Stoklas, R., Blaho, M., Seifertová, A., Hasenöhrl, S., Dobročka, E., Kuzmík, J., : Hafnium oxide as a promising material for gate isolation in GaN-based MOS HFETs In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 207-210.. (VEGA 2/0109/17). (VEGA 2/0104/17).
Chvála, A., Nagy, L., Marek, J., Priesol, J., Blaho, M., Kuzmík, J., Gregušová, D., Príbytný, P., Bernát, M., Donoval, D., Šatka, A., : Characterization of monolithic InAlN/GaN NAND logic cell supported by device simulation In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 40-43. (APVV 15-0673). (APVV 0367-11).
Stoklas, R., Gregušová, D., Blaho, M., Fröhlich, K., Novák, J., Matys, M., Yatabe, Z., Kordoš, P., Hashizume, T., : Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction,. Semicond. Sci Technol. 32 (2017) 045018. (VEGA 2/0105/13). (VEGA 2/0138/14). (APVV 14-0297). (CENTE).
Matys, M., Stoklas, R., Blaho, M., Adamowicz, J., : Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition. Applied Phys. Lett. 110 (2017) 243505. (SAFEMOST).
Gregušová, D., Blaho, M., Haščík, Š., Šichman, P., Laurenčíková, A., Seifertová, A., Dérer, J., Brunner, F., Würfl, H., Kuzmík, J., : Polarization-engineered n+GaN/InGaN/AlGaN/GaN normally-off MOS HEMTs. Physica Status Solidi a 214 (2017) 1700407. (HiPoSwitch). (APVV 15-0031). (SAFEMOST). (VEGA 2/0109/17).
Gregušová, D., Gucmann, F., Kúdela, R., Mičušík, M., Stoklas, R., Válik, L., Greguš, J., Blaho, M., Kordoš, P., : Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment,. Applied Surface Sci 395 (2017) 140-144. (VEGA 2/0105/13). (CENTE). (APVV 14-0297).
Nagy, L., Chvála, A., Stopjaková, V., Blaho, M., Kuzmík, J., Gregušová, D., Priesol, J., Šatka, A., : Towards standard digital cells on InAlN/GaN heterostructure In: Proc. ADEPT. 5st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. I. Lettrichová et al. Žilina: Univ. Žilina 2017. ISBN 978-80-554-1342-6. P. 255-258.. (APVV 15-0673).
2016
Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Priesol, J., Kuzmík, J., : Post-deposition annealing and thermal stability of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs In: ASDAM 2016. Eds. Š. Haščík et al. IEEE 2016. ISBN 978-1-5090-3081-1. P. 177-180. (APVV 15-0673).
Blaho, M., Gregušová, D., Haščík, Š., Seifertová, A., Ťapajna, M., Šoltýs, J., Šatka, A., Nagy, L., Chvála, A., Marek, J., Carlin, J., Grandjean, N., Konstantinidis, G., Kuzmík, J., : Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics. Semicond. Sci Technol. 31 (2016) 065011. (CENTE). (APVV 0367-11). (VEGA 2/0138/14).
2015
Čičo, K., Jančovič, P., Dérer, J., Šmatko, V., Rosová, A., Blaho, M., Hudec, B., Gregušová, D., Fröhlich, K., :Resistive switching in nonplanar HfO2-based structures with variable series resistance. J. Vacuum Sci Technol. B 33 (2015) 01A108.. (APVV 0509-10). (VEGA 2/0138/14). (CENTE II).
Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J., Grandjean, N., Kuzmík, J., : Self-aligned normally-off metal-oxide-semiconductor n+++GaN/InAlN/GaN high-electron mobility transistors. Phys. Status Solidi A 112 (2015) 1086-1090. (MORGaN). (APVV 0367-11). (VEGA 2/0138/14). (CENTE).
Gregušová, D., Kúdela, R., Gucmann, F., Stoklas, R., Blaho, M., Ťapajna, M., Kordoš, P., Fröhlich, K., : Technology and application of in-situ alox layers on III-V semiconductors. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 58.. (VEGA 2/0105/13). (APVV 14-0297). (CENTE).
2014
Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M., Kuzmík, J., : Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth. Applied Phys. Lett. 104 (2014) 013506. (HiPoSwitch). (APVV 0367-11). (VEGA 2/0105/13).
Stoklas, R., Gregušová, D., Blaho, M., Čičo, K., Fröhlich, K., Novák, J., Kordoš, P., : Gate leakage reduction of AlGaN/GaN MOS-HFETs with HfO2 prepared by ALD In: ASDAM 2014. Eds. J. Breza et al. IEEE 2014. ISBN 978-1-4799-5474-2. P. 133-136.. (VEGA 2/0105/13). (VEGA 2/0138/14). (APVV 0301-10). (CENTE).
Blaho, M., Dérer, J., Liday, J., Vogrinčič, P., Kordoš, P., Novák, J., Gregušová, D., : Low temperature ohmic contacts for self/aligned GaN-based HEMTs In: Proc. ADEPT. 2st Inter. Conf. on Advan. in Electronic and Photonic Technol. Eds. D. Pudis et al. Žilina: Univ. Žilina 2014. ISBN 978-80-554-0881-1. P. 124-128. (VEGA 2/0105/13). (VEGA 2/0098/13). (CENTE).
2013
Blaho, M., Gregušová, D., Jurkovič, M., Haščík, Š., Fedor, J., Kordoš, P., Fröhlich, K., Brunner, F., Cho, E., Hilt, O., Würfl, H., Kuzmík, J., : Ni/Au-Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOSHEMTs. Microelectr. Engn. 112 (2013) 204-207. (HiPoSwitch). (APVV 0104-10). (APVV 0367-11).
Laurenčíková, A., Hasenöhrl, S., Eliáš, P., Stoklas, R., Blaho, M., Novotný, I., Križanová, Z., Novák, J., :Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization. Applied Surface Sci 267 (2013) 60-64. (ITMS 2624220028). (APVV 0301-10). (ITMS 26240220041).
Jurkovič, M., Gregušová, D., Palankovski, V., Haščík, Š., Blaho, M., Čičo, K., Fröhlich, K., Carlin, J., Grandjean, N., Kuzmík, J., : Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region,. IEEE Electron Dev. Lett. 34 (2013) 432-434. (MORGaN). (APVV 0104-10).
Gregušová, D., Hušeková, K., Stoklas, R., Blaho, M., Jurkovič, M., Carlin, J., Grandjean, N., Kordoš, P., :Zr2/InAlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with InAlN barrier of different compositions. Japan. J. Applied Phys. 52 (2013) 08JN07. (VEGA 2/0098/09). (VEGA 2/0081/09). (VEGA 2-0147-11). (APVV LPP-0162-09).
2012
Jurkovič, M., Gregušová, D., Haščík, Š., Blaho, M., Molnár, M., Palankovski, V., Donoval, D., Carlin, J., Grandjean, N., Kuzmík, J., : GaN/InAlN/AlN/GaN normally-off HEMT with etched access region. In: WOCSDICE-EXMATEC 2012.Eds. Y. Cordier and J.-Y. Duboz. Island of Porquerolles: CRHEA & CNRS 2012.
Jurkovič, M., Gregušová, D., Haščík, Š., Blaho, M., Čičo, K., Palankovski, V., Carlin, J., Grandjean, N., Kuzmík, J., : Polarization engineered normally-off GaN/InAlN/AlN/GaN HEMT In: Inter. Workshop on Nitride Semicond. 2012 – IWN. Sapporo 2012..
Gregušová, D., Kúdela, R., Stoklas, R., Blaho, M., Gucmann, F., Fedor, J., Kordoš, P., : The influence of an AlOx film in-situ deposited on the GaAs-based HFETs properties. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 107-110.
2010
Stoklas, R., Gregušová, D., Blaho, M., Kordoš, P., Tajima, M., Hashizume, T., : Preparation and properties of AlGaN/GaN MOS-HFETs with atomic layer deposited Al2O3 as gate oxide. In: ASDAM ’10. Ed. J. Breza et al. Piscataway: IEEE 2010. ISBN: 978-1-4244-8572-7. P. 155-158.