Ing. Lubomír MALACKÝ, CSc.

1995 Gregušová, D., Eliáš, P., Malacký, L., Kúdela, R., and Škriniarová, J.: Wet chemical MESA etching of InGaP and GaAs with solutions based on HCl, CH₃COOH and H₂O₂, Physica Status Solidi A 151 (1995) 113. 1994 Malacký, L., Klockenbrink, R., Darmo, J., Wehmann, H., Zwinge, G., and Schlachetzki, A.: InGaAs Schottky contacts with iron-doped InP enhancement layer, J. of Phys. D 27 (1994) 2414. 1993 Novák, J., Hasenöhrl, S., and Malacký, L.: Large activation of praseodymium in In_0.53Ga_0.47As, Semicond. Sci Technol. 8 (1993) 747. 1991 Malacký, L., Novák, J., and Mikhailova, M.P.: Electrical properties of Al/GaInAsSb contacts, Physica Status Solidi A 123 (1991) K25. 1990 Malacký, L., Kordoš, P., and Novák, J.: Schottky barrier contacts on /p/ -GaInAs, Solid-State Electr. 33 (1990) 273. Novák, J. and Malacký, L.: Metal-semiconductor-metal photodetector on p-type In_0.53Ga_0.47As, Electronics Lett. 26 (1990) 704. 1989 Malacký, L., Kuzmík, J., and Cambel, V.: Optical properties of metal GaInAs contacts for Schottky photodiodes, Phys. Status Solidi A 115 (1989) K121.