Ing. Anna HORNIAKOVÁ

1994 Haščík, Š., Horniaková, A., and Huran, J.: Silicon trench etching multifrequency discharge reactor, Vacuum 45 (1994) 915. 1993 Horniaková, A., Huran, J., and Haščík, Š.: Etching of GaAs in a multi-frequency discharge reactor, Physica Status Solidi A 136 (1993) 93. Horniaková, A., Huran, J., and Haščík, Š.: Use of a CCl₂F₂/H₂ plasma plasma for the reactive ion etching of GaAs, Vacuum 44 (1993) 123. 1992 Huran, J., Horniaková, A., and Haščík, Š.: Deep plasma etching of Si in a CBrF ₃ plasma through a submicron single layer electron-beam litographic mask, Physica Status Solidi A 132 (1992) K81.