doc.RNDr. Lubomír HRIVNÁK, DrSc.

1993 Hrivnák, L.: Relativistic analogies in direct-gap semiconductors, Progress in Quantum Electron. 17 (1993) 235-271. 1992 Hrivnák, L.: Exciton binding-energy as a function of the well width, J. Applied Phys. 72 (1992) 321-3219. Hrivnák, L.: Simple calculations of energy-levels in quantum-wells of lattice-matched semiconductors with nonparabolic bands, J. Applied Phys. 72 (1992) 4370-4376. 1991 Hrivnák, L.: The relations for electron effective masses of strained In_xGa_1-xAs layers, Physica Status Solidi A 123 (1991) K133-K137. Hrivnák, L.: Conduction-band discontinuities of strained and unstrained layer In_xGa_1-xAs and In_xGa_1-xAs/InP heterojunctions and quantum-wells, Physica Status Solidi A 123 (1991) K111-K116. Hrivnák, L.: Band-gaps, effective masses, and band offsets in lattice matched heterojunctions, Physica Status Solidi A 128 (1991) K89-K93. 1990 Hrivnák, L.: Determination of gamma-electron and light hole effective masses in Al_xGa_1-xAs on the basis of energy gaps, band-gap offsets, and energy-levels in Al_xGa_1-xAs/GaAs quantum-wells, Applied Phys. Lett. 56 (1990) 2425-2427. 1989 Hrivnák, L.: Compositional dependences of band-gap energy and electron and light hole effective masses in In_xGa_1-xAs, Physica Status Solidi A 116 (1989) K73-K76. 1988 Hrivnák, L.: New relations for band-edge offsets in lattice matched heterojunctions, Acta Physica Slovaca 38 (1988) 346. 1987 Hrivnák, L.: An empirical relation for relative electronic permittivity of AⁿB^8-n tetrahedrally coordinated crystals, Czechoslovak J. Phys. 37 (1987) 1407-1408. Hrivnák, L.: On the nearest-neighbor distances in tetrahedrally coordinated AⁿB^8-n crystals, Czechoslovak J. Phys. 37 (1987) 1313-1316. Hrivnák, L.: Band-gap narrowing in semiinsulating gallium-arsenide, J. Applied Phys. 62 (1987) 3228-3233. 1986 Hrivnák, L.: The approximative formulas for longitudinal optical phonon energy and density in tetrahedrally coordinated AⁿB^8-n crystals, Czechoslovak J. Phys. 36 (1986) 771-774. 1985 Hrivnák, L.: Band-gap narrowing in semi-insulating GaAs, Phys. Status Solidi b 127 (1985) K165. Hrivnák, L.: New formula for the nearest-neighbour distances in tetrahedrally coordinated AⁿB^8-n crystals, Czechoslov. J. Phys. B 35 (1985) 581. Hrivnák, L.: A simple formula for the lattice constant of cubic crystals, Acta Physica Slovaca 35 (1985) 55. Hrivnák, L.: Estimation of nearest-neighbour distances and electron effective masses in ternarry and quaternarry tetrahedrally coordinated solid solutions of III-V and II-VI compounds, Czechosl. J. Phys. 35 (1985) 1445. 1984 Hrivnák, L.: Semiinsulating GaAs, Czechoslov. J. Phys. B 34 (1984) 436. Hrivnák, L. and Kedro, M.: Mobility of electrons limited by scattering on an impurity-ion potential with a spatialy variable dielectric function, Acta Physica Slovaca 34 (1984) 37. Hrivnák, L. and Kedro, M.: On the electron mobility in GaAs samples with dominant electrical level 0.15 eV below the conduction band, Acta Physica Slovaca 34 (1984) 234. 1983 Hrivnák, L.: On the determination of carrier mobilities and densities in semi-insulating GaAs, Phys. Status Solidi a 80 (1983) 1982 Hrivnák, L. and Betko, J.: On the relation between electron and hole mobilities in semi-insulating GaAs, Physica Status Solidi B 112 (1982) K143. Hrivnák, L.: Electric field dependence of longitudinal electron diffusivity in GaAs, Acta Physica Slovaca 32 (1982) 153. 1981 Olejníková, B., Hrivnák, L., and Kedro, M.: The model potential for charged centers in semiconductors, Phys. Status Solidi b 107 (1981) 451. 1980 Hrivnák, L.: A note on the utilization of the Poole-Frenkel effect for the determination of trap potential well, Phys. Status Solidi b 101 (1980) K137. Hrivnák, L.: Current induced transition from a high resistivity to a low resistivity state in semiconductors, Acta Physica Slovaca 30 (1980) 243. Hrivnák, L. and Dubecký, F.: The temperature and compensation dependence of the threshold voltage for switching effect due to the Poole-Frenkel and screening effects with application to chromium doped GaAs structures, Acta Physica Slovaca 30 (1980) 233. 1979 Hrivnák, L. and Ďurovová, B.: High-field capture of electrons by screened coulomb attractive center, Phys. Status Solidi b 92 (1979) K99. 1978 Hrivnák, L.: On the switching effect in crystalline semiconductors, Phys. Status Solidi A (1978) 2. 1977 Hrivnák, L., Morvic, M., and Betko, J.: Current-voltage characteristics of GaAs p-i-n and n-i-n diodes, Solid-State Electr. 20 (1977) 417. 1976 Hrivnák, L.: The switching effect in crystalline semiconductors due to the screening of donor: by conduction electrons, Phys. Status Solidi A 36 (1976) 551. Hrivnák, L.: Injection of electron into semi-insulating GaAs, Phys. Status Solidi A 37 (1976) K1. Hrivnák, L.: The screening inflence of the conduction electrons on the shallow donor levels in n-type GaAs, Czechoslov. J. Phys. 26 (1976) 670.