RNDr. Boháček Pavol, CSc.

Zaťko, B., Hrubčín, L., Boháček, P., Gurov, Y.B., Rozov, S.V., Evseev, S.A., Bulavin, M.V., Zamiatin, N.I., Kopylov, Y.A., Sekáčová, M., and Kováčová, E.: Spectrometric performance of 4H-SiC detectors after neutron irradiation, AIP Conf. Proc. 2778 (2023) 060012.

1. Long, Z.: Nuclear Instrum. Methods Phys. Res. A 1064 (2024) 169326.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Kováčová, E., Halahovets, Y., Rozov, S.V., and Sandukovskij, V.G.: Study of Schottky barrier detectors based on high quality 4H-SiC epitaxial layer with different thickness, Applied Surface Sci 536 (2021) 147801.

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16. He, X.Y.: Physica Scripta 99 (2024) 075943.
17. Feng, J.C.: Materials 17 (2024) 3657.

Hrubčín, L., Gurov, J.B., Zaťko, B., Boháček, P., Rozov, S.V., Rozov, I.E., Sandukovskij, V.G., a Skuratov, V.A.: The amplitude defect of SiC detectors during the recording of accelerated Xe ions, Yadernaya Fizika i Inzhiniring 10 (2019) no. 3, Phys. Atomic Nuclei 82 (2019) 1682-1685.

1. Gao, R.L.: IEEE Trans. Nuclear Sci 68 (2021) 1169.
2. Zhang, X.P.: J. Instrument. 18 (2023) P09038.

Kubanda, D., Zaťko, B., Šagátová, A., Žemlička, J., Zápražný, Z., Boháček, P., Dudák, J., Kováčová, E., and Nečas, V.: Performance of bulk semi-insulating GaAs-based sensor and its comparison to Si-based sensor for Timepix radiation camera, J. Instrument. 14 (2019) C01023.

#     1. Xu, J.: Rengong Jingti Xuebao/J. Synthetic Crystals 48 (2019) 975.

Zaťko, B., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Kováčová, E., and Nečas, V.: Neutron detection using epitaxial 4H-SiC detector structures. In: ASDAM 2018. IEEE 2018. ISBN 978-1-5386-7488-8. P. 41-44.

1. Slavicek, T.: J. Instrument. 15 (2020) C01036.

Šagátová, A., Zaťko, B., Nečas, V., Dubecký, F., Tu, L.A., Sedlačková, K., Boháček, P., and Zápražný, Z.: From single GaAs detector to sensor for radiation imaging camera, Applied Surface Sci 461 (2018) 3-9.

1. Xu, L.: Materials 12 (2019) 1192.
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10. Sun, X.: Acta Phys. Sinica 71 (2022) 178102.

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., and Nečas, V.: Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties, Applied Surface Sci 461 (2018) 276-280.

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5. Jiang, L.: Nuclear Instr. Methods in Phys. Res. A 1048 (2023) 167917.
6. Chen, L.: Ceramics Inter. 50 (2024) 30560.

Sedlačková, K., Zaťko, B., Šagátová, A., Nečas, V., Boháček, P., and Sekáčová, M.: Comparison of semi-insulating GaAs and 4H-SiC-based semiconductor detector covered by LiF film for thermal neutron detection, Applied Surface Sci 461 (2018) 242-248.

1. Monk, S.D.: IEEE Nuclear Sci Symp. Medical Imag. Conf. (NSS/MIC), 2019, pp. 1.
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Zaťko, B., Zápražný, Z., Jakůbek, J., Šagátová, A., Boháček, P., Sekáčová, M Korytár, D., Nečas, V., Žemlička, J., Mora, Y., and Pichotka, M.: Imaging performance of Timepix d etector based on semi-insulating GaAs, J. Instrument. 13 (2018) C01034.

1. Veale, M. C.: J. Phys. D 52 (2019) 085106.
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Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Dubecký, M., Boháček, P., Vanko, G., Gombia, E., Nečas, V., and Mudroň, J.: A comparative study of Mg and Pt contacts on semi-insulating GaAs: electrical and XPS characterization, Applied Surface Sci 395 (2017) 131-135.

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Dubecký, F., Osvald, J., Kindl, D., Hubík, P., Dubecký, M., Gombia, E., Šagátová, A., Boháček, P., Sekáčová, M., and Nečas, V.: Photocurrent spectra of semi-insulating GaAs M-S-M diodes: role of the contacts, Solid-State Electr. 118 (2016) 30-35.

#       1. Abdulkhaev, O.: Inter. Conf. Inf. Sci Comm. Techn. –  ICISCT 2020, art. no. 9351463.

Zaťko, B., Šagátová, A., Boháček, P., Sedláčková, K., Sekáčová, M., Arbet, J., and Nečas, V.: The influence of high-energy electrons irradiation on the electrical properties of Schottky barrier detectors based on semi-insulating GaAs, J. Instrument. 11 (2016) C01076.

1. Chia, J.Y.: Applied Phys. Express 15 (2022) 107002.

Zaťko, B., Šagátová, A., Sedláčková, K., Boháček, P., Sekáčová, M., Kohout, Z., Granja, C., and Nečas, V.: Radiation detector based on 4H-SiC used for thermal neutron detection, J. Instrument. 11 (2016) C11022.

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Sasinková, V., Huran,  J., Kleinová, A., Boháček, P., Arbet, J., and Sekáčová, M.: Raman spectroscopy study of SiC thin films prepared by PECVD for solar cell working in hard environment, Proc. SPIE 9563 (2015) 95630V.

1. de Obaldia, E.I.:Applied Sci-Basel 11 (2021) 3990.

Huran,  J., Hrubčín, L., Boháček, P., Borzakov, S.B., Skuratov, V.A., Kobzev, A.P., Kleinová, A., and Sasinková, V.: The effect of xe ion and neutron irradiation on the properties of SiC and SiC(N) film prepared by PECVD technology. In: RAD Proc. Ed. G. Ristič. Niš: RAD Ass. 2015. ISBN: 978-86-80300-01-6. P. 399-403.

1. Su, Q.: Acta Materialia 165 (2019) 587.

Šagátová, A., Zaťko, B., Sedlačková, K., Pavlovič, M., Fulop, M., Boháček, P., and Nečas, V.: GaAs detectors irradiated by electrons at different dose rates, J. Instrument. 9 (2014) C12050.

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Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Sasinková, V., Balalykin, N., Sekáčová, M., and Arbet, J. : Amorphous silicon carbide thin films deposited by plasma enhanced chemical vapor deposition at different temperature for hard environment applications. In: 21st Inter. Symp. Plasma Chemistry. Cairns (Australia) 2013. Výveska.

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Zaťko, B., Sedlačková, K., Dubecký,  F., Šagátová, A., Boháček, P., and Nečas, V.: Semiconductor detector based on 4H-SiC and analysis of its active region thickness, J. Instrument. 9 (2014) C05041.

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Huran, J., Boháček, P., Shvetsov, V., Kobzev, A., Kleinová, A., Borzakov, S., Hrubčín, L., Sekáčová, M., and Balalykin, N.: Neutron-irradation effect on the electrical chracteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology, Phys. Status Solidi a 210 (2013) 2756-2761.

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Šagátová, A., Zaťko, B., Sedlačková, K., Nečas, V., Dubecký, F., Boháček, P., and Chodák, I.: Semi-insulating GaAs detectors optimized for fast neutron detection, J. Instrument. 8 (2013) C03016.

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Huran, J., Valovič, A., Boháček, P., Shvetsov, V., Kobzev, A., Borzakov, S., Kleinová, A., Sekáčová, M., Arbet, J., and Sasinková, V.: The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition, Applied Surface Sci 267 (2013) 88-91.

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Zaťko, B., Dubecký, F., Šagátová, A., Sedlačková, K., Boháček, P., Sekáčová, M., Nečas, V., : Detector of fast neutrons based on silicon carbide epitaxial layers. In: ASDAM 2012. Eds. Š. Haščík, J. Osvald. Piscataway: IEEE 2012. ISBN 978-1-4673-1195-3. P. 151-154.

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Huran, J., Valovič, A., Kučera, M., Kleinová, A., Kováčová, E., Boháček, P., and Sekáčová, M.: Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties, J. Electr. Engn. 65 (2012) 333-335.

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Huran, J., Balalykin, N., Shirkov, G., Boháček, P., Kobzev, A., Valovič, A., Malinovsky, L., Sekáčová, M., :Characterization of nanocrystalline diamond/amorphous composite carbon films prepared by PECVD technology. Phys. Procedia 32 (2012) 875-879.

         1. Zhang, X.: J. Applied Phys. 115 (2014) 063508.

Zaťko, B., Sedlačková, K., Dubecký, F., Boháček, P., Sekáčová, M., and Nečas, V.: Detection of fast neutrons using detectors based on semi-insulating GaAs. J. Instrument. 6 (2011) C12047.

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Zaťko, B., Dubecký, F., Boháček, P., Huran, J., Nečas, V., and Ryc, L.: Development and evaluation of semi-insulating GaAs detectors in hot plasmas diagnostics, Nuclear Instr. Methods Phys. Res. A 633 (2011) S131-S133.

1. Chernykh, S.V.: Instrum. Experimen. Techniq. 61 (2018) 665.
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Huran, J., Zaťko, B., Boháček, P., Shvetsov, V., Kobzev, A., : Study of wide band gap nanocrystalline silicon carbide films for radiation imaging detectors. Nuclear Instr. Methods Phys. Res. A 633 (2011) S75-S77.

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Dubecký, F., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Huran, J., : A new kind of quasi-ohmic metallization in semi-insulating GaAs: Study of electrical characteristics. Nuclear Instr. and Methods in Phys. Res. A 607 (2009) 132-134.

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Zaťko, B., Dubecký, F., Přibil, J., Boháček, P., Frollo, I., Ščepko, P., Mudroň, J., Grybos, P., Nečas, V., : On the development of portable X-ray CT mini-system using semi-insulating GaAs radiation imaging detectors. Nuclear Instrum. Methods in Phys. Res. A 607 (2009) 67-70.

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Boháček, P., Huran, J., Kobzev, A., Balalykin, N., Petzold, J., : PECVD silicon carbon nitrid thin films: properties. In: ASDAM 2008. Eds. Š. Haščík and J.Osvald. Piscataway: IEEE 2008. ISBN: 978-1-4244-2325-5. P. 291-294.

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Dubecký, F., Hulicius, E., Frigeri, P., Šagátová-Perďochová, A., Zaťko, B., Hubík, P., Gombia, E., Boháček, P., Pangrác, J., Franchi, S., Nečas, V., : Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode. Nuclear Instr. and Methods in Phys. Res. A 563 (2006) 159-162.

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Dubecký, F., Šagátová-Perďochová, A., Ščepko, P., Zaťko, B., Sekerka, V., Nečas, V., Sekáčová, M., Hudec, M., Boháček, P., and Huran, J.: Digital X-ray portable scanner based on monolithic semi-insulating GaAs detectors: General description and first “quantum” images, Nuclear Instr. and Methods in Phys. Res. A 546 (2005) 118-124.

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Dubecký, F., Ščepko, P., Loukas, D., Zaťko, B., Sekerka, V., Nečas, V., Šagátová-Perďochová, A., Sekáčová, M., Boháček, P., Hudec, M., Huran, J., : Application of monolithic strip line radiation detector based on semi-insulating GaAs in X-ray portable scanner. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 314-320.

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Šagátová-Perďochová, A., Nečas, V., Ly Anh, T., Dubecký, F., Boháček, P., Sekáčová, M., Pavlicová, V., :Influence of top contact topology on detection properties of semi-insulating GaAs detectors. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 103-110.

*     1. Ladziansky, M.: PhD. Thesis. Bratislava: FEI STU 2009.

Dubecký, F., Boháček, P., Zaťko, B., Sekáčová, M., Huran, J., Šmatko, V., Fornari, R., Gombia, E., Mosca, R., Pelfer, P., : Role of electrode technology in radiation detector based on semi-insulating InP in development of detector array. Nuclear Instr. and Methods in Phys. Res. A 531 (2004) 181-191.

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Boháček, P., Korytár, D., Ferrari, C., Dubecký, F., Surma, B., Zaťko, B., Šmatko, V., Huran, J., Fornari, R., Sekáčová, M., Strzelecka, S., : Correlation of crystal defects and galvanomagnetic parameters of semi-insulating InP with performance of radiation detectors fabricated from characterised materials. Materials Sci Engn. B 91-92 (2002) 516-520.

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Morvic, M., Boháček, P., Betko, J., Dubecký, F., Huran, J., Sekáčová, M., : Electrical properties of semi-insulating GaAs irradiated with neutrons. Nuclear Instr. Methods in Phys. Res. B 197 (2002) 240-246.

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Dubecký, F., Zaťko, B., Nečas, V., Sekáčová, M., Fornari, R., Gombia, E., Boháček, P., Krempasky, M., and Pelfer, P.: Recent improvements in detection performances of radiation detectors based on bulk semi-insulating InP, Nuclear Instrum. Methods in Phys. Research A 487 (2002) 27-32.

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