Elektrotechnický ústav SAV, v.v.i.

2024

Moško, M., Koscelanská, M., Mošková, A., Vidiš, , Volkov, S., Gregor, M., Poláčková, M., Roch, T., Grančič, B., Satrapinsky, L., Kúš, P., Plecenik, A., and Plecenik, T.: Observation and characterization of titanium-like nano-filament in TiO2 memristor using superconducting electrode(s) and Andreev spectroscopy featured, J. Applied Phys. 136 (2024) 054303.

Hrdá, J., Moško, M., Píš, I., Vojteková, T., Pribusová Slušná, L., Hutár, P., Precner, M., Dobročka, E., Španková, M., Hulman, M., Chromik, Š., Šiffalovič, P., Bondino, F., and Sojková, M.: Investigating structural, optical, and electron-transport properties of lithium intercalated few-layer MoS₂ films: Unraveling the influence of disorder, Applied Phys. Lett. 124 (2024) 123101.

2023

Turiničová, V., Moško, M., Ďurina, , Tofail, S.A.M., Roch, T., and Gregor, M.: Measurement of electric charge in a charged hydroxyapatite dielectric using pendant drop, Langmuir 39 (2023) 7046–7056.

Hrdá, J., Moško, M., Vojteková, T., Pribusová Slušná, L., Precner, M., Hulman, M., Španková, M., Chromik, Š., and Sojková, M.: Electron transport in lithium-doped few-layer MoS₂ films. In Proc. 11^th Inter. Conf. on Advances in Electron. Photon. Technol. – ADEPT. Eds. D. Jandura et al. Žilina: EDIS 2023. ISBN 978-80-554-1977-0. P. 83-86.

Vidiš, , Patrnčiak, M., Moško, M., Plecenik, A., Satrapinsky, L., Roch, T., Ďurina, P., and Plecenik, T.: Gas-triggered resistive switching and chemiresistive gas sensor with intrinsic memristive memory, Sensors Actuators B 389 (2023) 133878. (Not IEE SAS)

2022

Moško, M., Koscelanská, M., Plecenik, T., Volko, S., Gregor, M., Mošková, A., Vidiš, M., Durina, P., Roch, T., Grančič, B., Satrapinsky, L., Kúš, P., and Plecenik, A.: Point contact spectroscopy of superconductors using nanofilament in a titanium-oxide based memristor. In: Proc. 12^th Inter. Conf. Solid State Surfaces Interfaces Conf. – SSSI 2022. Extend. Abstract Book. Ed. B. Brunner. Bratislava: Comenius Univ. 2022, p. 30-34. ISBN 978-80-223-5494-3. (Not IEE SAS)

2021

Kundrata, I., Mošková, A., Moško, M., Mičušík, M., Dobročka, E., and Fröhlich, K.: Atomic layer deposition of lithium metaphosphate from H₃PO₄ and P₄O₁₀ facilitated via direct liquid injection: Experiment and theory, J. Vacuum Sci Technol. A 39 (2021) 062407.

Mošková, A., Moško, M., Precner, M., Mikolášek, M., Rosová, A., Mičušík, M., Štrbík, V., Šoltýs, J., Gucmann, F., Dobročka, E., and Fröhlich, K.: Doping efficiency and electron transport in Al-doped ZnO films grown by atomic layer deposition, J. Applied Phys. 130 (2021) 035106.

2019

Vidiš, M., Plecenik, T., Moško, M., Tomašec, S., Roch, T., Satrapinsky, L., Grančič, B., and Plecenik, A.: Gasistor: A memristor based gas-triggered switch and gas sensor with memory, Applied Phys. Lett. 115 (2019) 093504. (Not IEE SAS)

2018

Mošková, A. and Moško, M.: States-conserving density of states for Altshuler-Aronov effect: Heuristic derivation, Solid State Comm. 284-286 (2018) 56-61.

Dvoranová,, Plecenik, T., Moško, M., Vidiš, M., Gregor, M., Roch, T., Grančič, B., Satrapinsky, L., Kúš, P., and Plecenik, A.: Point contact spectroscopy of superconductors via nanometer scale point contacts formed by resistive switching, AIP Adv. 8 (2018) 125217. (Not IEE SAS)

2017

Mošková, A., Moško, M., : Note on the Coulomb blockade of a weak tunnel junction with Nyquist noise: Conductance formula for a broad temperature range,. Phys. Status Solidi C 14 (2017) 1700029.

2015

Plecenik, T., Moško, M., Haidry, A., Durina, P., Truchly, M., Grančič, B., Gregor, M., Roch, T., Satrapinskyy, L., Mošková, A., Mikula, M., Kúš, P., Plecenik, A., : Fast highly-sensitive room-temperature semiconductor gas sensor based on the nanoscale Pt-TiO2-Pt sandwich. Sensors Actuators B 207 (2015) 351-361.

Krško, O., Plecenik, T., Moško, M., Haidry, A., Durina, P., Truchly, M., Grančič, B., Gregor, M., Roch, T., Satrapinskyy, L., Mošková, A., Kúš, P., Plecenik, A., : Highly sensitive hydrogen semiconductor gas sensor operating at room temperature. Procedia Engn. 120 (2015) 618-622.

Plecenik, T., Moško, M., Haidry, A., Durina, P., Truchly, M., Krško, O., Grančič, B., Gregor, M., Roch, T., Satrapinskyy, L., Mošková, A., Mikula, M., Kúš, P., Plecenik, A., : Highly sensitive Pt/TiO2/Pt sandwich type hydrogen gas sensor operating at room temperature. In: Progress in Applied Surface, Interface and Thin Film Sci. 2015 – SURFINT-SREN IV. Extend. Abstract Book. Ed. R. Brunner. Bratislava: CU 2015. ISBN: 978-80-223-3975-9. P. 116-117.

2014

Plecenik, A., Haidry, A., Plecenik, T., Durina, P., Truchly, M., Moško, M., Grančič, B., Gregor, M., Roch, T., Satrapinskyy, L., Mošková, A., Mikula, M., Kúš, P., : Metal oxide gas sensors on the nanoscale. Proc. SPIE 9083 (2014) 9083OY.

Durina, P., Plecenik, T., Moško, M., Haidry, A., Truchly, M., Mikula, M., Grančič, B., Roch, T., Gregor, M., Satrapinskyy, L., Kúš, P., Plecenik, A., : Properties of metal oxide gas sensors with electrodes placed below and on top of the sensing layer, Key Engn. Mater. 605 (2014) 527-530.

2013

Feilhauer, J., Moško, M., : Coexistence of diffusive resistance and ballistic persistent current in disordered metallic rings with rough edges: possible origin of puzzling experimental values. Phys. Rev. B 88 (2013) 125424, also arXiv: 1203.6512v2 (2012).

Mošková, A., Moško, M., Tóbik, J., : Theoretical study of persistent current in a nanoring made of a band insulator. Phys. Status Solidi B 250 (2013) 147-159.

2011

Feilhauer, J., Moško, M., : Conductance and persistent current in quasi-one-dimensional systems with grain boundaries: Effects of the strongly reflecting and columnar grains. Phys. Rev. B 84 (2011) 085454.

Mošková, A., Moško, M., : Jednoelektrónové tunelovanie a coulombovská blokáda. In: Kryofyzika a nanoelektronika. Košice: ÚEF SAV, 2011. ISBN 978-80-968060-9-6. S. 179-201.

Moško, M., : Perzistentný prúd v prstenci s normálnymi elektrónmi. In: Kryofyzika a nanoelektronika. Košice: ÚEF SAV, 2011. ISBN 978-80-968060-9-6. S. 202-219.

Feilhauer, J., Moško, M., : Quantum and Boltzmann transport in a quasi-one-dimensional wire with rough edges. Phys. Rev. B 83 (2011) 245328.

2009

Moško, M., Németh, R., Krčmár, R., Indlekofer, K., : Luttinger liquid and persistent current in a continuous mesoscopic ring with a weak link. Phys. Rev. B 79 (2009) 245323.

Tóbik, J., Mošková, A., Moško, M., : Persistent currents in perfect crystalline insulators: realistic tight-binding model. In: Proc. 17th Conf. Slovak Physicists. Ed. M. Reiffers. Bratislava: Slovak Phys. Soc., 2009. ISBN 978-80-969124-7-6. P. 49-50.

2008

Németh, R., Moško, M., : One-dimensional ring with Kronig–Penney periodic potential: Persistent currents at full filling. Physica E 40 (2008) 1498.

Feilhauer, J., Moško, M., : Persistent current in a disordered mesoscopic ring with many channels: Scattering-matrix based calculation. Physica E 40 (2008) 1582.

Krčmár, R., Gendiar, A., Moško, M., Németh, R., Vagner, P., Mitas, L., : Persistent current of correlated electrons in mesoscopic ring with impurity. Physica E 40 (2008) 1507-1509. (VEGA 2/6101/26).

Mošková, A., Moško, M., Gendiar, A., : Possible persistent current in a ring made of the perfect crystalline insulator. Physica E 40 (2008) 1991-1993.

2006

Moško, M., Vagner, P., Gendiar, A., Németh, R., : Coherent transport of interacting electrons through a single scatterer. Physica B 378-380 (2006) 908.

Vagner, P., Moško, M., Németh, R., Wagner, L., Mitas, L., : Hartree–Fock versus quantum Monte Carlo study of persistent current in a one-dimensional ring with single scatterer. Physica E 32 (2006) 350-353.

Cambel, V., Šoltýs, J., Martaus, J., Moško, M., : IV characteristics in structures prepared by tip induced oxidation J. de Physique IV 132 (2006) 171-175.

Gendiar, A., Moško, M., Vagner, P., Németh, R., : Tunneling of interacting one-dimensional electrons through a single scatterer: Luttinger liquid behavior in the Hartree–Fock model. Physica E 34 (2006) 596.

2005

Németh, R., Moško, M., : Hartree-Fock simulation of persistent current in rings with single scatterer. Acta Physica Polonica A 108 (2005) 795.

Gendiar, A., Moško, M., Vagner, P., Németh, R., : Tunneling of interacting fermions in 1D systems Acta Phys. Polonica 108 (2005) 661-667.

2004

Cambel, V., Šoltýs, J., Moško, M., Kúdela, R., : Two-dimensional electron transport through a barrier prepared by tip-induced oxidation. Superlatt. Microstruct. 36 (2004) 359-367.

2003

Moško, M., Vagner, P., Bajdich, M., Schaepers, T., : Coherent „metallic“ resistance and medium localization in a disordered one-dimensional insulator. Phys. Rev. Lett. 91 (2003) 136803.

Vagner, P., Markoš, P., Moško, M., Schaepers, T., : Coherent resistance of a disordered one-dimensional wire: Expressions for all moments and evidence for non-Gaussian distribution. Phys. Rev. B 67 (2003) 165316.

2002

Vagner, P., Moško, M., Markoš, P., Schaepers, T., : Dephasing of coherent one-dimensional transport in a disordered wire. Physica E 12 (2002) 703-707.

Moško, M., Vagner, P., : Elektrónový transport v jednorozmernom drôte s „disorderom“. In: 12. Konf. slov. fyzikov. Eds. M.Reiffers, L.Just. Košice: Slov. fyzik. spol. 2002. P. 56.

2001

Vagner, P., Moško, M., Markoš, P., Schäpers, T., : Dephasing of coherent 1D transport in a disordered wire. In: 14th Int. Conf. on the Electronic Properties of Two-Dimensional Systems. Praha: 2001. P. 195.

2000

Mošková, A., Moško, M., : Phase-shift analysis of two-dimensional carrier-carrier scattering in GaAs and GaN: Comparison with Born and classical approximations. Phys. Rev. B 61 (2000) 3048.

1999

Moško, M., Vagner, P., : Born approximation versus the exact approach to carrier-impurity collisions in a one-dimensional semiconductor: Impact on the mobility Phys. Rev. B 59 (1999) R10445-R10448.

Moško, M., Kálna, K., : Carrier capture into a GaAs quantum well with a separate confinement region: comment on quantum and classical aspects Semicond. Sci Technol. 14 (1999) 790-796.

1998

Vagner, P., Moško, M., : Carrier-impurity collisions in a narrow quantum wire: Born approximation versus exact solution. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 91.

Mošková, A., Moško, M., : Phase-shift analysis of two-dimensional carrier-carrier scattering. In: HEAD ’97. Eds. P.Kordoš and J. Novák. NATO ASI Series 4/45. Dordrecht: Kluwer Acad. Publ. 1998. P. 87.

1997

Vagner, P., Munzar, L., Moško, M., : Calculation of excitonic absorption spectrum of GaAs quantum wire free-standing in vacuum Acta Physica Polonica A 92 (1997) 1038.

Vagner, P., Moško, M., : Electron-impurity scattering in free- standing quantum wires: effect of dielectric confinement J. Applied Phys. 81 (1997) 3196.

Moško, M., Munzar, L., Vagner, P., : Excitonic effects in free-standing ultrathin GaAs films Phys. Rev. B 55 (1997) 15416.

1996

Kálna, K., Moško, M., : Carrier capture due to carrier-carrier interaction in quantum wells. In: HEAD 95. Eds. J.Novák et el. NATO ASI Series 3, High Technol. 11. Dordrecht: Kluwer Acad. Publ. 1996. P. 79.

Kálna, K., Moško, M., Peeters, F., : Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering Applied Phys. Lett. 68 (1996) 117.

Kálna, K., Moško, M., : Electron capture in quantum wells via scattering by electrons, holes and optical phonons Phys. Rev. B 54 (1996) 17730.

Vagner, P., Moško, M., : Impurity-scattering limited electron mobility in free-standing quantum wires: image charge effect Acta Phys. Polonica 90 (1996) 1103.

Mošková, A., Moško, M., : Microscopic origin of femtosecond spectral hole burning in laser excited quantum wells. In: HEAD 95. Eds. J.Novák et el. NATO ASI Series 3, High Technol. 11. Dordrecht: Kluwer Acad. Publ. 1996. P. 75.

Moško, M., Mošková, A., : Near-band edge spectral hole in a quantum well: No evidence for subpicosecond plasma thermalisation Acta Phys. Polonica A 90 (1996) 1055.

1995

Moško, M., Mošková, A., Cambel, V., : Carrier-carrier scattering in photoexcited intrinsic GaAs quantum wells and its effect on femtosecond plasma thermalization Phys. Rev. B 51 (1995) 16860.

Kálna, K., Moško, M., Peeters, F., : Electron-electron scattering induced capture in GaAs quantum wells, Lithuanian J. Phys. 35 (1995) 435.

Moško, M., Cambel, V., : Thermalization of one-dimensional electron gas by many-body Coulomb scattering: molecular dynamics model for quantum wires Acta Physica Polonica 87 (1995) 157.

Moško, M., Pelouard, J., Pardo, F., : Transmitted-acoustic phonon draag between 2D electron gases in GaAs/AlGaAs systems at low temperatures: Monte Carlo study Phys. Rev. B 52 (1995) 5830.

1994

Cambel, V., Moško, M., : Carrier-carrier scattering in photoexcited quantum wells: Inadequacy of two-particle model at low densities Semicond. Sci Technol. 9 (1994) 474.

Mošková, A., Moško, M., : Exchange carrier-carrier scattering of photoexcited spin-polarized carriers in GaAs quantum wells: Monte Carlo study Phys. Rev. B 49 (1994) 7443.

Moško, M., Mošková, A., : Photoexcited spin-polarized carriers in GaAs quantum wells: Monte Carlo study of exchange carrier-carrier scattering Semicond. Sci Technol. 9 (1994) 478.

Moško, M., Cambel, V., : Thermalization of one-dimensional electron gas by many-body Coulomb scattering: molecular dynamics model for quantum wires Phys. Rev. B 50 (1994) 8864.

Moško, M., Pelouard, J., Pardo, F., : Transmitted-acoustic phonon drag between parallel two-dimensional electron gases: Monte Carlo simulation Semicond. Sci Technol. 9 (1994) 806.

1993

Cambel, V., Moško, M., : The influence of ionized impurities on electron-electron drag between parallel two-dimensional gases: Monte Monte Carlo simulation with molecular dynamics Semicond. Sci Technol. 8 (1993) 364.

1992

Moško, M., Cambel, V., Mošková, A., : Electron-electron drag between parallel two-dimensional gases Phys. Rev. B 46 (1992) 5012.

1991

Moško, M., Mošková, A., : Ensemble Monte Carlo simulation of electron-electron scattering: Improvements of conventional methods Phys. Rev. B 44 (1991) 10794.

1990

Moško, M., Novák, I., : Picosecond real-space electron transfer in GaAs-N-AlxGa1-x heterostructures with graded barriers: Monte Carlo simulation J. Applied Phys. 67 (1990) 890.

1989

Moško, M., Novák, I., : Energy exchange between heterostructures layers by real space electron transfer J. Applied Phys. 66 (1989) 2011.

Moško, M., Novák, J., : Monte Carlo study of real space electron transfer. In: Proc. 3rd Conf. Phys. Technol. GaAs other III-V Semicond. Ed. P.Kordoš. Zürich: Trans. Tech. Publ. 1989. P. 107.

1988

Moško, M., Novák, I., Quittner, P., : On the analytical approach to the real space electron transfer in GaAs-AlGaAs heterostructures Solid State Electr. 31 (1988) 363.

doc. RNDr. Martin MOŠKO, DrSc.