RNDr. Dagmar Gregušová, DrSc.
Publikácie za rok 2025
Publikačná činnosť obsahuje údaje z on-line databázy Ústrednej Knižnice SAV.
Publikácie
- FLOROVIČ, M. - DZURIŠ, M. - HARŤANSKÝ, R. - KOVÁČ, Jaroslav Jr. - CHVÁLA, A. - GREGUŠOVÁ, Dagmar - GUCMANN, Filip - ŤAPAJNA, Milan. Simple RF on-chip calibration for high-frequency transistor measurements. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. - IEEE, 2024, p. 46-49. ISBN 979-8-3315-4060-9. ISSN 2474-9737. Typ:
- KORDOŠ, Peter - GREGUŠOVÁ, Dagmar** - MIKULICS, M. - HARDTDEGEN, H. Cutoff frequency increase of gate recessed AlGaN/GaN MISHFETs with amorphous AlN insulator. In AIP Advances, 2025, vol. 15, no. 025028. (2024: 0.32 - SJR, Q3 - SJR). ISSN 2158-3226. Dostupné na: https://doi.org/10.1063/5.0252024 (VEGA 2/0068/21. APVV 21-0365) Typ: ADCA
- KUZMÍK, Ján** - BLAHO, Michal - GREGUŠOVÁ, Dagmar - ELIÁŠ, Peter - POHORELEC, Ondrej - HASENÖHRL, Stanislav - HAŠČÍK, Štefan - GUCMANN, Filip - ZÁPRAŽNÝ, Zdenko - DOBROČKA, Edmund - KYAMBAKI, M. - KONSTANTINIDIS, G. Growth and performance of n++ GaN cap layer for HEMTs applications. In Materials science in semiconductor processing, 2025, vol. 185, no. 108959. (2024: 0.785 - SJR, Q1 - SJR). ISSN 1369-8001. Dostupné na: https://doi.org/10.1016/j.mssp.2024.108959 (VEGA 2/0005/22. Horizont Európa-101091433. VEGA 2/0068/21) Typ: ADCA
- MATÚŠ, M. - STUCHLÍKOVÁ, Ľ. - GREGUŠOVÁ, Dagmar - MORALES, M. - WEIS, M. - MAREK, J. - RUTERANA, P. Impact of Indium content on defect distribution in InGaN/GaN QW structures. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. - IEEE, 2024, p. 38-41. ISBN 979-8-3315-4060-9. ISSN 2474-9737. (VEGA 2/0068/21) Typ:
- STOKLAS, Roman - HASENÖHRL, Stanislav - GREGUŠOVÁ, Dagmar - DOBROČKA, Edmund - GUCMANN, Filip - ELIÁŠ, Peter - ROSOVÁ, Alica - MIČUŠÍK, Matej - CHROBÁK, Š. - KUZMÍK, Ján. Electron mobility analysis of InN/In0.61Al0.39N heterostructure after HCl treatment. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. - IEEE, 2024, p. 50-53. ISBN 979-8-3315-4060-9. ISSN 2474-9737. (VEGA 2/0068/21. APVV 21-0008) Typ: