Publikácie

Publikácie za rok 2025

Publikácie

• EGYENES, Fridrich - GUCMANN, Filip - HUŠEKOVÁ, Kristína - SEILER, Eugen - VINCZE, A. - DOBROČKA, Edmund - NÁDAŽDY, Peter - CHOUHAN, Hemendra - HRUBIŠÁK, Fedor - KRETTOVÁ, Miriam - KESHTKAR, Javad - POHORELEC, Ondrej - GREGUŠOVÁ, Dagmar - ŤAPAJNA, Milan. Engineering of ferromagnetic Ga vacancies in β-Ga2O3 thin films grown by liquid-injection metal-organic-chemical-vapor-deposition via forming gas annealing. In ICSM 2025 and ICQMT 2025 : 10th International Conference on Superconductivity and Magnetism and 3rd International Conference on Quantum Materials and Technologies, 26th April-03rd May 2025 Ölüdeniz-Fethiye, Turkey. 1. vyd. - [S.l.: s.n.], 2025, p. 111. (ICSM and ICQMT 2025 : International Conference on Superconductivity and Magnetism and International Conference on Quantum Materials and Technologies) Typ: GII
• FERENČÍK, F.** - DOBROVODSKÝ, Jozef - DOBROČKA, Edmund - NOGA, Pavol. Impact of sputtering power on low concentration impurities in binary oxides: A ToF-ERDA characterization study. In Vacuum, 2025, vol. 240, no. 114418. (2024: 3.9 - IF, Q2 - JCR, 0.783 - SJR, Q1 - SJR). ISSN 0042-207X. Dostupné na: https://doi.org/10.1016/j.vacuum.2025.114418 Typ: ADCA
• CHIDAMBARAM, Jeevan Roshan - ROSOVÁ, Alica - DOBROČKA, Edmund - HUŠEKOVÁ, Kristína - ŤAPAJNA, Milan - GUCMANN, Filip. Structural characterization of twinning in β-Ga₂O₃ filament inclusions on Ga₂O₃ thin films epitaxially grown on sapphire substrates by MOCVD. In ELITECH´25 : 27th Conference of Doctoral Students. Bratislava. May 28, 2025. Zost. A. Kozáková et al. - Bratislava : Spektrum STU, 2025. ISBN 978-80-227-5492-7. Typ: AFD
• CHOUHAN, Hemendra - DOBROČKA, Edmund - NÁDAŽDY, Peter - ŤAPAJNA, Milan - HUŠEKOVÁ, Kristína - MIKOLÁŠEK, M. - EGYENES, Fridrich - KESHTKAR, Javad - HRUBIŠÁK, Fedor - SOBOTA, Michal - ŠIFFALOVIČ, Peter - GUCMANN, Filip. Origin of enhanced crystal quality of (-201) β-Ga2O3 on off-cut sapphire substrate using liquid injection-MOCVD. In Proceedings of ADEPT 2025 : 13th International Conference on Advances in Electronic and Photonic Technologies - ADEPT, held in Podbanské, High Tatras, Slovakia, June 15th – 18th, 2025. Eds. D. Jandura, I. Lettrichová. - Žilina : University of Zilina in EDIS, 2025, p. 92-95. ISBN 978-80-554-2208-4. (APVV 20-0220) Typ: AFD
• KESHTKAR, Javad - GUCMANN, Filip - VARGA, Marian - SZABÓ, O. - AUBRECHTOVÁ DRAGOUNOVÁ, K. - HUŠEKOVÁ, Kristína - ELIÁŠ, Peter - DOBROČKA, Edmund - FEDOR, Ján - ŠČEPKA, Tomáš - KOZAK, Andrii - CORA, Ildikó - JI, X. - POMEROY, J.W. - KUBALL, M. - TRUCHLY, M. - MIKULA, M. - KROMKA, A. - ŤAPAJNA, Milan. Enhancing β- Ga2O3 -diamond integration for high-power electronics: Thermal and mechanical performance of SiC and SiO2 interlayers. In EM-NANO 2025 : 10th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, June 11-14, 2025 Fukui, Japan. Typ: AFG
• KRETTOVÁ, Miriam - HUŠEKOVÁ, Kristína - WOSKO, M. - DOBROČKA, Edmund - ZÁPRAŽNÝ, Zdenko - KOZAK, Andrii - CHOUHAN, Hemendra - EGYENES, Fridrich - POHORELEC, Ondrej - ŤAPAJNA, Milan - PASZKIEWICZ, R. - GUCMANN, Filip. Heteroepitaxial growth of gallium oxide on silicon using liquid-injection MOCVD. In Proceedings of ADEPT 2025 : 13th International Conference on Advances in Electronic and Photonic Technologies - ADEPT, held in Podbanské, High Tatras, Slovakia, June 15th – 18th, 2025. Eds. D. Jandura, I. Lettrichová. - Žilina : University of Zilina in EDIS, 2025, p. 112-115. ISBN 978-80-554-2208-4. (APVV 20-0220) Typ: AFD
• KRETTOVÁ, Miriam - HUŠEKOVÁ, Kristína - WOSKO, M. - DOBROČKA, Edmund - ZÁPRAŽNÝ, Zdenko - KOZAK, Iryna - CHOUHAN, Hemendra - EGYENES, Fridrich - POHORELEC, Ondrej - ŤAPAJNA, Milan - PASZKIEWICZ, R. - GUCMANN, Filip. Investigation of the material properties of thin epitaxial Ga2O3 films grown by liquid-injection MOCVD on (111) Si with AlN buffer. In ELITECH´25 : 27th Conference of Doctoral Students. Bratislava. May 28, 2025. Zost. A. Kozáková et al. - Bratislava : Spektrum STU, 2025. ISBN 978-80-227-5492-7. Typ: AFD
• KUZMÍK, Ján** - BLAHO, Michal - GREGUŠOVÁ, Dagmar - ELIÁŠ, Peter - POHORELEC, Ondrej - HASENÖHRL, Stanislav - HAŠČÍK, Štefan - GUCMANN, Filip - ZÁPRAŽNÝ, Zdenko - DOBROČKA, Edmund - KYAMBAKI, M. - KONSTANTINIDIS, G. Growth and performance of n++ GaN cap layer for HEMTs applications. In Materials science in semiconductor processing, 2025, vol. 185, no. 108959. (2024: 4.6 - IF, Q2 - JCR, 0.785 - SJR, Q1 - SJR). ISSN 1369-8001. Dostupné na: https://doi.org/10.1016/j.mssp.2024.108959 (VEGA 2/0005/22. Horizont Európa-101091433. VEGA 2/0068/21) Typ: ADCA
• ROSOVÁ, Alica - ČAPLOVIČOVÁ, M. - RUTERANA, P. - DOBROČKA, Edmund - ELIÁŠ, Peter - GUCMANN, Filip - HASENÖHRL, Stanislav - STOKLAS, Roman - KUZMÍK, Ján. Influence of InAlN layer Mg doping on the quality of InN/In0.61Al0.39N heterostructure deposited by MOCVD. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. - IEEE, 2024, p. 30-33. ISBN 979-8-3315-4060-9. ISSN 2474-9737. (VEGA 2/0068/21. APVV 21-0008) Typ:
• STOKLAS, Roman - HASENÖHRL, Stanislav - GREGUŠOVÁ, Dagmar - DOBROČKA, Edmund - GUCMANN, Filip - ELIÁŠ, Peter - ROSOVÁ, Alica - MIČUŠÍK, Matej - CHROBÁK, Š. - KUZMÍK, Ján. Electron mobility analysis of InN/In0.61Al0.39N heterostructure after HCl treatment. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. - IEEE, 2024, p. 50-53. ISBN 979-8-3315-4060-9. ISSN 2474-9737. Dostupné na: https://doi.org/10.1109/ASDAM63148.2024.10844678 (VEGA 2/0068/21. APVV 21-0008) Typ:
• ŤAPAJNA, Milan - EGYENES, Fridrich - HRUBIŠÁK, Fedor - HUŠEKOVÁ, Kristína - DOBROČKA, Edmund - NÁDAŽDY, Peter - ROSOVÁ, Alica - GUCMANN, Filip. Heteroepitaxy of Ga2O3 films using liquid-injection MOCVD: Impact of Hydrogen annealing on transport properties of MOSFETs. In EM-NANO 2025 : 10th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, June 11-14, 2025 Fukui, Japan. Typ: AFE
• VARGA, Marian - KESHTKAR, Javad - HUŠEKOVÁ, Kristína - KOZAK, Iryna - SHARMA, D. - KOZAK, Andrii - ELIÁŠ, Peter - DOBROČKA, Edmund - ŠČEPKA, Tomáš - HUDEC, Boris - DÉRER, Ján - FEDOR, Ján - AUBRECHTOVÁ DRAGOUNOVÁ, K. - SZABÓ, O. - ŤAPAJNA, Milan - KROMKA, A. - GUCMANN, Filip. Fabrication and characterization of Ga2O3-diamond heterostructures: impact of using protective interlayer. In Proceedings of ADEPT 2025 : 13th International Conference on Advances in Electronic and Photonic Technologies - ADEPT, held in Podbanské, High Tatras, Slovakia, June 15th – 18th, 2025. Eds. D. Jandura, I. Lettrichová. - Žilina : University of Zilina in EDIS, 2025, p. 31-35. ISBN 978-80-554-2208-4. (APVV 21-0231. APVV 20-0220) Typ: AFD