Study of semiconductor detectors of ionizing radiation based on 4H-SiC epitaxial layer

Semiconductor detectors of ionizing radiation are important area of research activity because of their utilization in many areas of human activities like monitoring radiation in nuclear energetics, medicine, cosmic research and so on. Because detectors operate at harsh environment by definition, there is much effort to search for base semiconductor material with high radiation and temperature resistance. Silicon carbide is very promissing material. Our research is also concentrated on radiation resistance characteristics of prepared detector samples and their comparision with standartly used Silicon detectors. Picture below shows comparison of Si and SiC detectors and their energy resolution worsering after 5 MeV electrons irradition. You can see that Si detector lost its energy resolution of testing X-ray peaks generated by 241Am radioisotope after dose of 1 kGy but SiC is still relatively good after dose of 30 kGy.

 

 

Outputs:

Zaťko, B., Hrubčín, L., Šagátová, A., Osvald, J., Boháček, P., Zápražný, Z., Sedlačková, K., Sekáčová, M., Dubecký, F., Skuratov, V.A., Korytár, D., and Nečas, V.: Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties, Applied Surface Sci 461 (2018) 276-280.

Hrubčín, L., Gurov, J.B., Zaťko, B., Mitrofanov, S.V. Rozov, S.V., Sedlačková, K., Sandukovskij, V.G. Semin, V.A., Nečas, V., and Skuratov, V.A.: Characteristics of Si and SiC detectors at registration of Xe ions, J. Instrument. 13 (2018) P11005.