Head: Ing. Filip Gucmann, PhD.
Deputy Head: Ing. Ťapajna Milan, PhD.
The research at the department aims technology development, detail characterization, and application of III-V semiconductors for micro- and opto-electronics. The focus is given to quantum- and nano-structures based on InAlN/(In)GaN, AlGaN/GaN, AlGaAs/GaAs, InGaP/GaAs, and InGaP/GaP material systems. The department operates two MOCVD growth systems, one for III-N materials (CCS system), second for the III-As and III-P materials (horizontal system).
Research areas:
Current research focus:
- MOCVD growth of III-V semiconductors