Microelectronic, micromechanic and sensoric devices and structures

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Microelectronic, micromechanic and sensoric devices and structures

Motivation for such a research was primarily necessity of microsensors able to work under extreme conditions of high temperature and in chemically aggressive environment. New materials like a group of III-nitrides are vey attractive for production of electronic circuits and sensors working at high temperature. At present a new topic has been added to this theme. We analyze and simulate electron transport in Schottky contacts on 4H-SiC which is successfully studied in the Department in connection with surface barrier detectors of ionizing radiation.

For research and development of MEMS sensors a strategy on the basis of iteration steps starting from an original idea was developed in our Department:

  • Modelling and simulation – models formation; simulation of mechanical and electrical properties and behavior of the structures
  • Process technology – production of MEMS and electrical components using microsystem technologies
  • Functional evaluation – electro/thermal/mechanical/structural analysis using contactless characterizing methods
  • Model verification – the results obtained serve for a trimming of parameters of the model for its better understanding and further improvement

 

The technology is applicable for sensors working at extreme conditions for a detection and a measurement od dynamic pressure effects as, e. g., combustion and rocket engines; pressure monitoring in industrial turbines; dynamics of pressure waves.

 

Technology applicable in the field of sensors operated in harsh environment for detecting and measuring dynamic pressure phenomena for example engine and/or cylinder combustion; rocket motors; gas-borne high intensity sound pressure level measurement; industrial turbine pressure monitoring; turbine combustor dynamics; far-field blast dynamics.

 

Recent publications:

Osvald, J.: Intersection of 4H-SiC Schottky diodes I–V curves due to temperature dependent series resistance, Semicond. Sci Technol. 37 (2022) 125003.

Osvald, J., Hrubčín, L., and Zaťko, B.: Temperature dependence of electrical behaviour of inhomogeneous Ni/Au/4H–SiC Schottky diodes, Mater. Sci Semicond. Process. 140 (2022) 106413.

Osvald, J., Hrubčín, L., and Zaťko, B.: Schottky barrier height inhomogeneity in 4H-SiC surface barrier detectors, Applied Surface Sci 533 (2020) 147389.

Osvald, J., Lalinský, T., and Vanko, G.: High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes, Applied Surface Sci 461 (2018) 206-211.

Chromik, Š., Španková, M., Talacko, M., Dobročka, E., and Lalinský, T.: Some peculiarities at preparation of Bi4Ti3O12 films for bolometric applications, Applied Surface Sci 461 (2018) 39-43.

Osvald, J.: Fast and slow traps in Al2O3/(GaN)/AlGaN/GaN heterostructures studied by conductance technique, Physica E 97 (2018) 126-129.

Osvald, J., Vanko, G., Chow, L., Chen, N.C., and Chang, L.B.: Transition voltage of AlGaN/GaN heterostructure MSM varactor with two-dimensional electron gas, Microelectron. Reliab. 78 (2017) 243–248.