National

Cost-effective Ga2O3-diamond heterojunction photodetectors for solar-blind UV imaging
Cenovo dostupné fotodetektory s heteroprechodom Ga2O3-diamant pre UV zobrazovanie necitlivé na slnečné svetlo
Registration code:	IM-2023-87
Program:	IMPULZ
Project leader:	Ing. Varga Marian, PhD.
Duration:	1.8.2024 – 30.7.2029

TECHAPHO – Ternary chalcogenide perovskites for photovoltaics
Ternárne chalkogenidové perovskity pre fotovoltaiku
Registration code:	APVV-23-0202
Program:	SRDA
Project leader:	Ing. Chromik Štefan, DrSc.
Annotation:	The goal of the proposed project is the synthesis of ternary chalcogenides with perovskite structure and systematiccharacterization of the relationship between the composition, structure, optical properties, thermal and chemical stability with the potential in the application in photovoltaics, or other optoelectronics. The result will be a set of prepared pure ternary chalcogenides in the form of crystalline powders and thin films with known, as well as newly prepared compositions and a comprehensive characterization of their optical and electronic properties, as well as thermal and chemical stability. Ternary chalcogenides will be prepared also by wet approach at lower temperature up to 350 °C in the form of nanocrystals which will be characterized in terms of their structure and morphology.Proof-of-concept solar cell will be prepared, which has not yet been reported in the literature. The optimalization will be done based on performance measurements.
Duration:	1.7.2024 – 30.6.2028

CERBERUS – Colour centres in diamond – correlation between atomic structure and opto-electronic properties
Farebné centrá v diamante – korelácia medzi atómovou štruktúrou a optoelektronickými vlastnosťami
Registration code:	APVV-23-0361
Program:	SRDA
Project leader:	Ing. Izsák Tibor, PhD.
Annotation:	The subject of the project is in the field of quantum technologies. We will prepare and characterize optically -activedefects in diamonds and correlate the atomic structures with optical properties to be used for quantum applicati ons.For a wide range of dopant concentrations, we will identify the dopant distributions and study the evolution ofdopants’ configuration in-situ, during thermal annealing, using atomic-resolution microscopy and spectroscopytechniques. We will further study the effect of annealing on the opto-electronic properties by measuringphotoluminescence, photocurrent and electroluminescence for the same set of samples. Graphene transparentelectrodes on a diamond surface will be fabricated for phototransport measurements. Diamond-based hybrid p-i-ndiodes will be prepared for electroluminescence measurements. We will focus on finding a correlation between theatomic structure and the opto-electronic properties of differently doped diamonds. This will contribute to theunderstanding of the fundamental relationship needed to efficiently design optically -active elements for diamondquantum devices.
Duration:	1.9.2024 – 31.12.2027

New hybrid semiconductor structures for ionizing radiation detection
Nové hybridné polovodičové štruktúry pre detekciu ionizujúceho žiarenia
Registration code:	2/0063/24
Program:	VEGA
Project leader:	Mgr. Zaťko Bohumír, PhD
Duration:	1.1.2024 – 31.12.2027

PEROVCHIR – Effect of the application of organic molecules on the properties of perovskite thin-film structures
Vplyv aplikácie organických molekúl na vlastnosti perovskitovských tenkovrstvových štruktúr
Registration code:	APVV-23-0238
Program:	SRDA
Project leader:	RNDr. Španková Marianna, PhD
Annotation:	In recent years, sufficient experimental evidence has accumulated that adsorbed organic chiral molecules affectthe superconducting properties of YBa2Cu3O7-x (YBCO) films. In some cases, an increase in their critical temperature Tc can be observed. On the other hand, it has been shown that in the case of ferromagnetic layers (e.g., cobalt), the application of chiral molecules can lead to a change in magnetization without the use of an electric current. An important role here is played by spin. Spin introduces an additional degree of freedom into the system, allowing devices, for example, to reduce electrical consumption or increase their computational capacity. Spintronic devices have become an attraction in electronics; however, problems associated with controlling spin remain a significant challenge. A unique way of manipulating spin is through the effect known as chirality-induced spin selectivity (CISS), which results from the specific structure of organic chiral molecules. The project focuses on the preparation and characterization of simple heterostructures and their interaction with chiral polymers deposited on the film surface. Specifically, it deals with the influence of chiral lactic acid on perovskite thin films, where the selected perovskites are high-temperature superconductor YBCO and ferromagnet La1-xSrxMnO3 (LSMO).
Duration:	1.7.2024 – 31.12.2027

ROTOLES – Optimised growth and the transport and optical properties of thin layers of selected topological semimetals
Optimalizovaný rast a transportné a optické vlastnosti tenkých vrstiev vybraných topologických polokovov
Registration code:	APVV-23-0564
Program:	SRDA
Project leader:	Dr. rer. nat. Hulman Martin
Annotation:	One of the fundamental results of quantum mechanics in the 1920s was the derivation of relativistic equations formassive fermions (Dirac), massless fermions (Weyl) and fermions that are themselves antiparticles (Majorana).Since those times, particle physics has been searching for particles representing Weyl and Majorana\’s fermions.However, their search has not yet been successful.In the last twenty years, it has been shown that the band structure of some materials has such uniquecharacteristics that the charge carriers in them can behave according to the dynamics satisfying the Dirac or Weylrelativistic equations. Such materials include compounds from the group of transition metals dichalcogenides,which we will focus on in our project.We will work with very thin layers of selected materials from this group, such as PtSe2, MoTe2 and WTe2. The firststep in the implementation of the project will be the preparation of such layers by chalcogenisation of thin films oftransition metals. Their transport and optical properties will then be thoroughly investigated. Temperaturedependent transport measurements can show us transitions between different structures of the same material. We expect that a metal-insulator transition can be observed when the thickness of such thin films is varied. Some ofthese materials can go into a superconducting state at very low temperatures. We will also try to induce this state inclose proximity, i.e. when the thin layer is in contact with another superconductor.Optical measurements will be correlated with transport measurements. We derive essential frequency-dependentcharacteristics, such as optical conductivity, from the latter. We will look for characteristics theoretically predictedfor Dirac and Weyl fermions in the optical conductivity.
Duration:	1.7.2024 – 30.6.2027

PIRADUNEW – Perspective ionizing radiation detectors for the uncovered neutron energy window
Perspektívne detektory ionizujúceho žiarenia pre nepokryté energetické okno neutrónov
Registration code:	APVV-22-0382
Program:	SRDA
Project leader:	Mgr. Zaťko Bohumír, PhD
Annotation:	The subject of the presented project is the optimization and preparation of semiconductor detection structuresbased on 4H-SiC and polycrystalline diamond suitable for neutron detection. As part of the project, single detectorswill be prepared and investigated, especially for neutron energies from 100 keV to several MeVs. There arecurrently few sensitive detectors in this area of neutron energy. The advantages of SiC and polycrystalline diamond are the high radiation and temperature resistance of structures. The high spectrometric capability of SiC detectors is also important, especially when detecting neutrons with energies below 1 MeV. Polycrystalline diamond is m ore affordable than SiC, and our first preliminary results show its promising detection properties, especially when detecting ionizing particles. Another advantage of both types of semiconductors is the low sensitivity to gamma radiation, which is almost always present in the event that neutrons are formed during a nuclear reaction. This gamma ray enhances the background and impairs the sensitivity of the detectors currently in use. Pixel sensors for the Timepix/Medipix reading chip will also be developed and investigated. Prototypes of the radiation camera will be tested and calibrated using a monoenergetic neutron source.
Duration:	1.7.2023 – 30.6.2027

Thermal stability of superconducting coils and filamentized REBCO tapes
Tepelná stabilita supravodivých cievok a filamentovaných REBCO pások
Registration code:	2/0098/24
Program:	VEGA
Project leader:	Mgr. Seiler Eugen, PhD
Annotation:	The project investigates electro-thermal stability of filamentized superconducting REBCO tapes andsuperconducting coils at transporting the electric current. The goal is to develop theoretical models and numericalmethods allowing to determine the maximum transport current that can flow through a superconducting coil orthrough a filamentized tape without the risk of a rapid local heating. Characterization of tapes and coils will bebased on the standard measurement methods as well as on specially designed experiments, which will allow toincorporate the real parameters of available superconducting tapes into the models. In order to experimentallyverify the theoretical models of thermal stability of superconducting coils, specific model coils will be built,equipped with multiple voltage and temperature sensors for detailed monitoring of the electro-thermal stability.The outcomes of the theoretical models will subsequently be applied at manufacturing bigger coils, relevant forrealistic electric devices.
Duration:	1.1.2024 – 31.12.2026

InN: Breaking the Limits of Solid-State Electronics
InN: prielom v elektronike tuhej fázy
Registration code:	09I01-03-V04 -00019
Program:	Plán obnovy EÚ
Project leader:	Ing. Kuzmík Ján, DrSc.
Annotation:	The InBreak project follows Horizon 2020 project NANOMAT. NANOMAT aims to inaugurate and establish a new domain of "Flexible (Conformal) Power RF Nanoelectronics" through an ambitious innovative heterogeneous technology platform including organic-based electronics and heat sinks, semiconductor monolithic wide band gap microwave integrated circuits (MMICs), radio frequency microelectromechanical actuators (RF MEMS) and acoustic sensors. In the InBreak project, InN as a unique semiconductor material will be grown as strained channel on a tailored N-polarity InAlN buffer layer. Conventional GaN buffer will be replaced by InAlN with an In molar fraction of 0.7-0.9. We expect that this approach, combined with a thin GaN interlayer between the InAlN barrier and the InN channel, will lead to excellent high-density 2-dimensional electron gas (2DEG) confinement in the epi-structures. Completion of the project will enable HEMTs higher working frequencies and the potential of approaching 6G technology in the (sub)THz band.
Duration:	1.11.2023 – 30.6.2026

Memristive sensorics for post-digital electronics
Memristívna senzorika pre post-digitálnu elektroniku
Registration code:	09I03-03-V02-00044
Program:	Plán obnovy EÚ
Project leader:	Dehghan Mohammad
Annotation:	In-sensor computing is a new paradigm for 21st century electronics inspired by nature. In present-day electronics, all the noisy, unstructured data output by sensors needs to be digitised first for further processing. This may soon become a showstopper given the exponential rise in the amount of sensing devices and data they produce, both in consumer electronics like self-driving vehicles and in the Industrie 4.0 framework. On the other hand, in bio-inspired systems, the sensing and processing are not separate; instead, the sensing nodes directly form synaptic connections in the hardware neural network, where the external stimuli being sensed directly alter the synaptic weight matrix, allowing simple algorithms encoded in the neural network to process the signals into reasonable output in real-time. Under this thesis, the student will learn and understand how to build such a prototypical smart sensing system from scratch, i.e. by depositing, patterning and stacking ultra-thin (~nm) oxide and metal films into the simple sensor and memristor devices and arranging these building blocks into functional sensing neural network matrices on a chip. The expertise acquired will cover nano-fabrication methods with a focus on atomic layer deposition (ALD), material analyses and electrical characterisation techniques, and an understanding of the hardware neural networks based on emerging devices. The thesis will be a part of a wider project, and the student will become a part of our research team. We are looking for creative and dedicated team players, prior experience in related areas is a plus.
Duration:	1.9.2023 – 30.6.2026

Nanoelsen – Nanostructured thin-film materials characterized by weak binding interactions for electronic and sensoric applications
Nanoštrukturované tenkovrstvové materiály vyznačujúce sa slabými väzbovými interakciami pre elektronické a senzorické aplikácie
Registration code:	APVV-21-0278
Program:	SRDA
Project leader:	RNDr. Gregušová Dagmar, DrSc.
Annotation:	The proposed project is focused on the basic research of the preparation processes and properties ofsemiconducting sulfides of transition metals such as Mo, W and Ni and selected combinations with their oxides inthe form of mixed sulfides and oxides, as well as the possibilities of their doping with noble metals (Pt, Au) for usein gas sensors as well as in supercapacitors. We also anticipate full utilization of semiconductormicroelectronic and micromechanical techniques and micro / nanotechnologies, which can significantly contributeto qualitatively improved detection properties, low operating power consumption of gas sensors as well asincreased energy efficiency and supercapacitor lifetime.
Duration:	1.7.2022 – 30.6.2026

Perspective ionizing radiation detectors for high-energy particles
Perspektívne detektory ionizujúceho žiarenia pre vysoko-energetické
Registration code:	09I03-03-V06-00108
Program:	Plán obnovy EÚ
Project leader:	Mgr. Zaťko Bohumír, PhD
Annotation:	The aim of the project is to procure a research infrastructure that will be used during the implementation of the project APVV-22-0382 and for conducting further independent research and development carried out by the organization.he knowledge gained will be used to develop new ultra-thin, low-friction coatings for various metal substrates based on 2D materials, suitable for use in vacuum environments.
Duration:	1.7.2024 – 30.6.2026

Lubrication challenge for ultra-thin advanced 2D-TMDC in extreme conditions
Pokročilé nízkotrecie povlaky na báze ultratenkých 2D-TMDC pre extrémne podmienky
Registration code:	09I03-03-V04-00709
Program:	Plán obnovy EÚ
Project leader:	Mgr. Kozak Andrii, PhD.
Annotation:	The friction, stiction, adhesion, and wear are significantly influenced not only by the chemical and physical properties of the objects in relative motion but also by their shape, dimensions of the interacted area, and environment. Tightening the moving objects to the nanoscale make surface forces dominate the tribological behaviour, and the appearance of additional energy dissipation mechanisms can be observed, which can be critical for the lifetime and reliability of the devices. In turn, the environment renders multi-varied effects on the sliding interface, promoting the structural superlubricity or opposite extremally high friction caused by atomic interactions. The aim of this project is fabrication of low-friction wear-protected surfaces coating system applicable to advanced applications at the nano- and macroscale. Ultrathin coating of new 2D TMDs (PtSe2, MoSe2) will be formed with the aim to investigate their structure evolution during sliding in ambient air, vacuum environment as well as at elevated temperatures. The friction and wear processes on the surface of 2D materials and their interfaces will be systematically analysed by means of nanoscale and macroscale friction analysis. The gained knowledge will be then used to develop new ultrathin materials as a low-friction coating for different type of metal surfaces.
Duration:	1.7.2024 – 30.6.2026

Study of TMD-based 2D heterostructures (TO-DO)
Štúdium 2D heteroštruktúr na báze TMD
Registration code:	SK-AT-23-0021
Program:	SRDA
Project leader:	Mgr. Sojková Michaela, PhD.
Duration:	1.7.2024 – 30.6.2026

Transit2D – Transistors based on 2D Metal Chalcogenides Grown via Thermally Assisted Conversion
Tranzistory na báze 2D kovových chalkogenidov pripravených teplom podporovanou konverziou
Registration code:	APVV-21-0231
Program:	SRDA
Project leader:	Ing. Ťapajna Milan, PhD.
Annotation:	2D materials can form one-atom-thick sheets with extraordinary properties. One of the most promising classes of2D materials is the transition metal dichalcogenides (TMDs). The transition from an indirect to a direct bandgap,when the bulk materials is thinned down to a monolayer, results in unique electrical and optical properties of 2DTMDs. Post-transition metal chalcogenides (PTMCs) represents another interesting group of 2D materials. Thesematerials have wide band gap and, depending on the structure of the material, show anisotropic electrical andoptical properties. The aim of this project is the fabrication of field-effect transistors with metal-oxide-semiconductorgate (MOSFETs) based on selected TMDs and PTMCs compounds and detail analysis of their transport properties.We will focus on large-area few-layer PtSe2 and GaS/GaSe films grown by thermal assisted conversion, i.e.sulfurization and selenization. Based on the existing experiences, structural, chemical and electrical properties ofhorizontally-aligned PtSe2 films prepared by selenization will be optimized, targeting mobilities similar to thoseprepared by mechanical exfoliation. Then, MOSFET technology using both, top-gate as well as bottom-gateapproach will be developed and optimized. Atomic layer deposition and metal-oxide chemical vapor deposition(MOCVD) will be employed for gate oxide growth. GaS/GaSe few-layer films will be prepared by chalcogenization
Duration:	1.7.2022 – 30.6.2026

Large-scale production and characterization of 2D materials
Veľkoplošná výroba a charakterizácia 2D materiálov
Registration code:	09I03-03-V02-00044
Program:	Plán obnovy EÚ
Project leader:	Mgr.Phil. Ahmad Faizan
Annotation:	Two-dimensional (2D) materials, including transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) or platinum diselenide (PtSe2), are one of the promising materials and a gateway to modern technologies and optoelectronics. Currently, there is a lot of research that studies fabrication of TMDs by chemical vapour deposition (CVD), which makes the use of these 2D materials in the electronic market feasible. The use of alternative methods such as pulsed laser deposition (PLD) also opens up new possibilities in this field and can provide comparative results to elucidate the growth optimization. The available CVD and PLD systems in IEE SAS will be used to study the fundamental aspect of the growth and properties of TMD materials. For research-related activities, the optimized TMD layers are typically grown on standard 1×1 cm2 substrates. However, from a technological point of view, upscaling the fabrication process is a big challenge. Many times, the deposition conditions (temperature, gas flow, pressure, power, etc.) used for small-scale samples preparation may not work well on a larger scale. Thus, the study and optimization of large-scale (4-inch) fabrication will be a new chapter in this interesting field of 2D materials research. The PhD thesis will be focused mainly on the development of technological procedures for the preparation of precisely defined, homogeneous and reproducible TMD layers on large areas using a newly installed two-zone furnace. In addition, a comprehensive characterization of the surface and bulk properties (including morphological, chemical, optical and opto-electronic properties) of the fabricated 2D materials is also expected.
Duration:	1.9.2023 – 30.6.2026

SUPENKA – Superconducting energy cables
Supravodivé energetické káble
Registration code:	09I01-03-V04 -00020
Program:	Plán obnovy EÚ
Project leader:	doc. Ing. Gömöry Fedor, DrSc.
Annotation:	The SUPENKA project follows up the European SCARLET project, the aim of which is to develop a superconducting cable for direct current at medium voltage level of 25-50 kV, which results in the removal of the converter platform (around 10,000 tons of material). Such a solution can be advantageously used, for example, in transmission from a wind turbine farm, where direct current can be directly obtained in the turbine structure at the medium voltage level (25 to 100 kV).The proposed SUPENKA project aims to develop in more detail some aspects of the problem solved in the SCARLET project. In the scientific field, there are two main goals: • C1: Development of a methodology for including the inhomogeneity of superconducting properties in the analysis of the stability of current transmission by a superconducting cable • C2: Verification of the possibilities of cooling superconducting cables with non-traditional cooling media. The basic verification of the methodology on short samples has already taken place, therefore the starting level of the SUPENKA project is in the range of TRL 3-4, and the intention is to reach the level of TRL 5.The SUPENKA project will contribute to the fulfillment of the ambitious climate goals of the EC work program "Sustainable, secure and competitive energy supply" aimed at transforming the energy system and shifting energy supply towards climate neutrality within two areas of influence: • Leading position of European industry in key and new technologies for benefit of people • Affordable and clean energy
Duration:	1.4.2024 – 31.3.2026

Critical aspects of the growth for a new generation of III-N devices
Kritické aspekty rastu polovodičových štruktúr pre novú generáciu III-N súčiastok
Registration code:	2/0005/22
Program:	VEGA
Project leader:	Ing. Kuzmík Ján, DrSc.
Annotation:	Gallium Nitride (GaN) compounds are investigated for a new generation of high-frequency transistors, powerelectronics and post CMOS logic circuits. Flexibility in this area is given by a miscibility of In and Al with GaN,providing a wide spectra of semiconductors with a possibility of setting an energy band-gap from 0.65 eV to 6.2eV, with countless combinations of heterostructures. Basis of our project is given by study and mastering of thegrowth of unique material concepts using a metal-organic chemical-vapour deposition (MOCVD) technique. Weaim to investigate: i/ transistors with N-polar InN channel, ii/ MOS contacts on N-polar heterostructures, iii/transistors with a hole conduction, as well as iv/ vertical structures on GaN substrate. Part of the project will berepresented by characterisation activities, like investigation of the electron transport properties in N-polar InN, in MOS structures, study on the 2-dimensional hole gas as well as transient effect in C-doped vertical transistors.
Duration:	1.1.2022 – 31.12.2025

Modification of properties of superconducting, ferromagnetic, oxide films and structures for advanced electronics
Modifikácia vlastností supravodivých, feromagnetických oxidových vrstiev a štruktúr pre modernú elektroniku
Registration code:	2/0140/22
Program:	VEGA
Project leader:	RNDr. Španková Marianna, PhD
Annotation:	We prepare and study oxide – ferromagnetic and dielectric perovskite thin films and micro- and nano structures as well as selected current superconducting films. YBa2Cu3Ox (YBCO) and La0.67Sr0.33MnO3 (LSMO) microstrips will be exposed different types of organic molecules to study their influence on the superconducting and ferromagnetic film properties. Following the results of the previous VEGA project, we will continue to study the superconductor S/ferromagnet F and S/F/S structures focusing on a creation of magnetic inhomogeneities with the aim to increase the triplet component of superconductivity and resolve the phenomenom of S/F thin films interaction (proximity effect). As part of the project, we will investigate the possibility of superconducting behavior of a two-dimensional MoS2 system deposited by pulsed laser deposition.
Duration:	1.1.2022 – 31.12.2025

Raman and FTIR low-temperature study of PtSe2, MoTe2 and WTe2 thin films
Nízkoteplotné merania pomocou Ramanovej a Infračervenej spektroskopie: MoTe2, WTe2, PtSe2
Registration code:	APD0021
Program:	Other projects
Project leader:	RNDr. Pribusová Slušná Lenka, PhD.
Duration:	1.7.2024 – 31.12.2025

Growth and optical characterization of 2D materials: MoTe2, WTe2, PtTe2
Rast a optická charakterizácia 2D materiálov: MoTe2, WTe2, PtTe2
Registration code:	2/0046/23
Program:	VEGA
Project leader:	RNDr. Pribusová Slušná Lenka, PhD.
Annotation:	Research of thin-film materials noticed a significant increase, especially since the discovery of graphene, when a wide range of 2D materials began to study. A significant group of 2D materials is transition metal dichalcogenides(TMDs), including MoTe2, WTe2, and PtTe2. These materials have unique optoelectronic properties that varydue to the thickness of the layer and the crystal structure. Electrical properties vary depending on structures, fromsemiconducting to metallic. The preparation of films by tellurization of molybdenum, tungsten, and platinum ismore difficult than sulfurization or selenization due to the weaker redox properties of tellurium. The challenge in thin films is the controlled preparation of the required crystal structure of homogenous large-arealayers. This project aims to contribute to the solution of preparing these materials, characterize their structure and orientation of the films concerning the substrate, and determine the optical parameters and electrical properties.
Duration:	1.1.2023 – 31.12.2025

Superconducting joints of MgB2 wires for windings in persistent mode
Supravodivé spoje pre MgB2 vinutia v perzistentnom móde
Registration code:	2/0017/22
Program:	VEGA
Project leader:	Ing. Kováč Pavol, DrSc.
Annotation:	The idea of this project is to make and optimize superconducting joints between the composite MgB2 wiresmanufactured by powder-in-tube method „PIT“ and by the infiltration or diffusion of magnesium into boronprocess „IMD“ and use it for winding working in „persistent mode“. It will be done dominantly for superconductingjoints of winding made by „wind and react“ technique, but joints for winding with already reacted MgB2 wiresmade by „react and wind“ process will be developed as well. The properties of manufactured superconductingMgB2 joints of different geometry and architecture will be subjected to mechanical and thermal treatments, which would reach the joint current around 50% of critical current measured for the reference MgB2 wire at external field 5 T.
Duration:	1.1.2022 – 31.12.2025

REBCO superconductor tensile and compressive limits – methodology
Ťahové a tlakové limity REBCO supravodiča – metodológia
Registration code:	APD0064
Program:	Other projects
Project leader:	Ing. Kujovič Tomáš, PhD.
Duration:	1.7.2024 – 31.12.2025

Ultra-thin conformal surface coatings of complex-morphology structures for improving battery performance using atomic layer deposition
Ultratenké homogénne povrchové vrstvy na štruktúrach komplexnej morfológie pre vylepšenie výkonu batérii využitím depozície po atómových vrstvách
Registration code:	2/0162/22
Program:	VEGA
Project leader:	Ing. Hudec Boris, PhD.
Annotation:	Project is focused on the development and optimization of method of 3D deposition of conformal ultra-thincoatings using ALD (atomic layer deposition) on structures of complex morphology, such as micro-porous layersand powders. The method will subsequently be applied in preparation of new generation Li-based batteries, bypassivation and modification of micro-porous surfaces of cathode layers. Effect of ultra-thin ALD coatingsconformality at the nano-scale will be systematically evaluated by correlation of electron microscopy analyseswith electrochemical measurements of prepared batteries. Next step will be the modification of surfaces ofdiscrete metal and ceramic micro-particles and powders with the aim of their subsequent application in fabrication of novel ceramic and metal materials and also new materials for experimental battery electrodes.
Duration:	1.1.2022 – 31.12.2025

Impact of substrate material on positive bias temperature instabilities in enhancement mode Al2O3/InAlN/GaN MOSHEMTs
Vplyv substrátu na teplotné nestability pri kladnom napätí v obohacovacích Al2O3/InAlN/GaN MOSHEMT-och
Registration code:	24183001
Program:	Other projects
Project leader:	Ing. Pohorelec Ondrej, PhD.
Duration:	1.7.2024 – 31.12.2025

Fabrication of ferromagnetic nanostructures for magnonic crystal
Výroba feromagnetických nanoštruktúr pre magnónový kryštál
Registration code:	24182002
Program:	Other projects
Project leader:	Mgr. Vetrova Iuliia, PhD.
Duration:	1.7.2024 – 31.12.2025

Modern electronic devices based on ultrawide bandgap semiconducting Ga2O3 for future high-voltage applications
Moderné elektronické súčiastky na báze ultraširokopásmového polovodiča Ga2O3 pre budúce vysokonapäťové aplikácie
Registration code:	20-0220
Program:	SRDA
Project leader:	Ing. Gucmann Filip, PhD.
Annotation:	Wide bandgap (WBG) semiconductor devices represent one of the key technologies in development of high power and high frequency systems for electric power conversion and telecommunications owing to their fundamental benefit of higher breakdown electric fields, in some cases increased electron mobility, and possibility to form heterostructures and 2D electron gas. GaN and SiC, two typical WBG examples also benefit from moderate values of thermal conductivity allowing for more efficient sinking of generated waste heat, lower channel temperatures, and enhanced device reliability. New emerging semiconductor materials with even higher bandgap energies (Eg>3.4eV) referred to as ultrawide bandgap materials allow for further improvements in high power and high voltage handling solid-state electronic devices. Currently, semiconducting gallium oxide (Ga2O3) is under extensive study and expected to provide base material for rectifying Schottky -gate diodes and field-effect transistors for applications operating in kV range thanks to its good scalability, relatively simple synthesis, availability of native melt-grown substrates, and wide range of achievable n-type doping levels. The main aim of the proposed project constitutes material research and development of technology for epitaxial growth of epitaxial α -,β-, and ε-Ga2O3 layers and for processing of basic unipolar and bipolar electronic devices based on prepared Ga2O3 layers for future high voltage/power applications. Ga2O3 layers will be grown using liquid injection metalorganic chemical vapour deposition on sapphire, and higher thermal conductivity SiC substrates. We also aim to prepare Schottky diodes, FETs, and all-oxide Ga2O3 PN diodes using naturally p-type oxides (e.g. NiO, In2O3, CuO2). Comprehensive structural, electrical, optical, and thermal study of prepared epitaxial layers and devices will be conducted and numerous original, high-impact results are expected to be obtained.
Duration:	1.7.2021 – 30.6.2025

NanoMemb-RF – Advanced GaAs-based nanomembrane heterostructures for highperformance RF devices
Moderné nanomembránové heteroštruktúry na báze GaAs pre vysoko produktívne vysokofrekvenčné prvky
Registration code:	APVV-21-0365
Program:	SRDA
Project leader:	RNDr. Gregušová Dagmar, DrSc.
Annotation:	The main aim of the proposed project is to expand the basic knowledge and to master the fabrication technology ofthe advanced nanomembrane AlGaAs/GaAs heterojunction devices for high-performance RF applications.Insufficient removal of the waste heat in electronic devices due to the Joule losses leading to overheating and earlydevice failure often requires foreign, high thermal conductivity substrates to be employed. As opposed to themainstream research of the GaN-based electronic devices prepared directly on sapphire or SiC, proposed GaAsbased devices will be fabricated upon self-supporting heterostructure nanomembranes transferred onto varioussubstrates. It is very timely, original, and desirable approach to extend the utilization of the GaAs-based devicesmaterial potential, as demonstrated by our preliminary results.
Duration:	1.7.2022 – 30.6.2025

TREND – Optimization of round high-temperature supercnoducting cable for pulse magnetic field
Optimalizácia okrúhleho kábla z vysokoteplotného supravodiča pre pulzné magnetické polia
Registration code:	20-0056
Program:	SRDA
Project leader:	doc. Ing. Gömöry Fedor, DrSc.
Annotation:	The project is focused on an optimization of a cable made of high temperature superconducting tapes wound on acore in form of a tube with the possibility of cooling the cable by the coolant flowing through the former. Thepurpose of the optimization is a significant decrease of AC losses, which can be achieved through threemodifications of the cable. The first one is to reduce the width of the 4 mm superconducting tape down to 1 mmwith steps smaller than 0.2 mm. The tuning of the tape width should allow to prepare the cables with optimalpacking of the cable layers and with greater flexibility. The second modification is an additional narrowing of thesuperconductor width by striation scribing the superconducting layer along the tape with already optimized width.Both processes require a development of a suitable method for the cutting and scribing process of thesuperconducting tapes with minimal impact on their mechanical, structural and electrical properties. The thirdmodification is the innovation of the central former, which should fulfill requirement of significantly reduced electricalconductivity. Modified superconducting tapes and cables prepared from them will be characterized in terms ofmechanical and electromagnetic properties. Most of the experiments will be supported by computer modeling.
Duration:	1.7.2021 – 30.6.2025

PEGANEL – p-GaN electronics for energy savings and beyond-CMOS circuits
p-GaN elektronika pre úsporu energie a post-CMOS obvody
Registration code:	APVV-21-0008
Program:	SRDA
Project leader:	Ing. Kuzmík Ján, DrSc.
Annotation:	III-N semiconductors are probably the most versatile and promising semiconductor family, consisted of artificialcompounds made of GaN, AlN and InN. In the project proposal we describe new technological concepts withsufficient freedom to solve main problems of the III-N post-beyond CMOS age: in transistors co-existence of theparasitic n-channel along with the p-channel, as well as low hole gas density and mobility. Similarly, we aim todemonstrate scalable threshold voltage in the enhancement-mode p-doped power transistors, which are needed bythe industry for efficient, energy-saving convertors. In these aspects, our laboratories already showed verypromising results proving the competence to reach described targets. If successfully implemented, results of ourproposed project would represent a significant step forward not only from the world-wide point of view but is also infull agreement with the RIS3 SK (perspective areas of specialization of the Slovak economy), particularly in thefield of semiconductors for electric cars of automotive industry, as well as in information and communicationsciences.
Duration:	1.7.2022 – 30.6.2025

GRaDe – Growth and Radiation Mechanisms in Diamond Hybrid Detectorsd Radiation Mechanisms in Diamond Hybrid Detectors
Rastové a radiačné mechanizmy v diamantových hybridních detektoroch
Registration code:	SK-CZ-RD_21/0016
Program:	SRDA
Project leader:	Mgr. Zaťko Bohumír, PhD
Duration:	1.7.2022 – 30.6.2025

Scholarships for excellent researchers threatened by the war conflict in Ukraine
Štipendiá pre excelentných výskumníkov ohrozených vojnovým konfliktom na Ukrajine
Registration code:	09I03-03-V01-00006
Program:	Plán obnovy EÚ
Project leader:	RNDr. Kalmykova Tetiana, PhD.
Duration:	1.4.2022 – 31.3.2025

Electronic and optoelectronic devices based on ultra-wide bandgap Ga2O3 semiconductor
Elektronické a optoelektronické súčiastky na báze ultra-širokopásmového Ga2O3 polovodiča
Registration code:	2/0100/21
Program:	VEGA
Project leader:	Ing. Ťapajna Milan, PhD.
Annotation:	Recently, great research effort has been devoted to ultra-wide bandgap semiconductors for the preparation ofhigh-performance electronic devices operating in the electric fields up to tens of kV and UV photodetectors. Thisproject aims the research of the growth of epitaxial layers and electronic as well as optoelectronic devices basedon Ga2O3. Based on preliminary results, we will investigate the growth of rhombohedral Ga2O3 with the highestbandgap energy. Epitaxial layers will be prepared by metal-organic chemical vapor deposition using liquid phaseprecursor injection. The layers will be used for preparation and research of electronic devices with a focus onSchottky diodes and switching MOSFET transistors. We will study the transport and thermal properties, parasiticeffects and breakdown mechanisms of the developed electronic devices as well as electro-optical properties ofp-n heterojunctions. We will also target exploratory research for improvements in thermal management of thepower transistors.
Duration:	1.1.2021 – 31.12.2024

Photonic Lab-on-a-Chip: investigation and development of plasmonic sensor platform for immediate detection of composites in solutions
Fotonické laboratórium na čipe: výskum a vývoj platformy plazmonického senzora pre okamžitú detekciu zložiek v roztokoch
Registration code:	20-0437
Program:	SRDA
Project leader:	doc. Ing. Novák Jozef, DrSc.
Duration:	1.7.2021 – 31.12.2024

Nano-optical probes and sensors integrated on optical fiber
Nanooptické sondy a senzory integrované na optickom vlákne
Registration code:	20-0264
Program:	SRDA
Project leader:	doc. Ing. Novák Jozef, DrSc.
Duration:	1.8.2021 – 31.12.2024

Preparation and properties of superconducting and magnetic oxide films for modern electronic applications
Príprava a vlastnosti supravodivých a magnetických oxidových vrstiev pre moderné elektronické aplikácie
Registration code:	SAV-PAV
Program:	Vedecko-technické projekty
Project leader:	Ing. Chromik Štefan, DrSc.
Duration:	1.1.2023 – 31.12.2024

Fabrication, characterization, and doping of ultra-thin layers of transition metal dichalcogenides
Príprava, charakterizácia a dopovanie ultratenkých vrstiev dichalkogenidov prechodných kovov
Registration code:	2/0059/21
Program:	VEGA
Project leader:	Mgr. Sojková Michaela, PhD.
Annotation:	Thanks to the unusual physical properties, 2D materials have been intensively studied for several years. Aninteresting group of this class of materials is transition metal dichalcogenides TMD. They have a hexagonalstructure with the individual layers bonded to each other only by weak Van der Waals bonds. This causessignificantly anisotropic properties and has a significant effect on their electronic structure. Some of them showphysically interesting correlated states (superconductivity, charge density waves). The primary goal of this projectis to prepare and study the properties of thin layers of 2 different TMD – MoS2 and PtSe2, and to study theinfluence of doping with Li and Na cations on the electrical and structural properties of these layers. Thesecondary goal is to optimize growth and doping conditions to improve the parameters of thin films, such aselectrical conductivity and charge carrier mobility which will enable the preparation of functional electroniccomponents – transistors.
Duration:	1.1.2021 – 31.12.2024

Study of magnetic vortex dynamics for device applications
Štúdium dynamiky magnetického víru pre využitie v súčiastkach
Registration code:	2/0168/22
Program:	VEGA
Project leader:	Ing. Šoltýs Ján, PhD
Annotation:	In this project, we will focus on the theoretical and experimental investigation of magnetic vortices. The idea is touse them as a candidate for an information carrier in ultrafast and energy-efficient devices. The key idea of suchmemory is to use the two vortex core polarities as a magnetic bit that can be easily read and written via thedynamical reversal. We will search for the optimal shape of a magnetic 3D pattern with polarity easily controlledby a small in-plane magnetic field. In the second part of the project, we will design and prepare a system ofordered magnetic nanoelements in the vortex state set by an in-plane magnetic field. Such ordered nanoelementscan be considered as a single unit cell of the magnonic crystal. They can be also periodically arranged into afinite 2D array of interacting magnetic objects to observe the unidirectional spin waves. Therefore, ourinvestigation will be an important step towards the first experimental demonstration of topological magnons.
Duration:	1.1.2022 – 31.12.2024

Study of the influence induced by organic-based spin filters applied on perovskites
Štúdium spinových filtrov vytvorených pomocou aplikácie organických molekúl na perovskity
Registration code:	APP473
Program:	DoktoGrant
Project leader:	Ing. Bennár Michal
Duration:	1.1.2024 – 31.12.2024

Thermal stabilization of high-temperature superconducting tapes for fault current limiters
Tepelná stabilizácia vysokoteplotných supravodivých pások pre použitie v obmedzovačoch skratových prúdov
Registration code:	1/0205/21
Program:	VEGA
Project leader:	doc. Ing. Gömöry Fedor, DrSc.
Annotation:	Additional thermal stabilization is necessary for commercially available high-temperature superconducting tapes,in order to use the tapes in devices for fault current limiting in high-voltage grids. The proposed project is aimed atfabrication of thermally stabilizing composite coating (epoxy resin with ceramic filler), which will act as a sink andabsorber of the heat produced in a limiting event. Various materials for thermal stabilization will be tested, withregard to their thermal, physical, and mechanical properties, and their resistance against thermal shocks.Possibilities for improvement of mechanical properties will be investigated by additional reinforcement of thethermal stabilization. The effectivity of the thermal stabilization will be determined for superconducting tapes fromvarious producers, by experimental limiting of fault current. Experiments will be complemented with numericalmodelling.
Duration:	1.1.2021 – 31.12.2024

Topologically nontrivial magnetic and superconducting nanostructures
Topologicky netriviálne magnetické a supravodivé nanoštruktúry
Registration code:	20-0425
Program:	SRDA
Project leader:	Ing. Šoltýs Ján, PhD
Duration:	1.7.2021 – 31.12.2024

Contact engineering for advanced materials and devices
Výskum a vývoj kontaktov pre nové materiály a súčiastky
Registration code:	2/0068/21
Program:	VEGA
Project leader:	RNDr. Gregušová Dagmar, DrSc.
Annotation:	Intensive research has so far been done into metallic contacts to semiconductors. However, new types ofconductivity, materials and devices, and new contact formation mechanisms require new insights into theformation of such contacts. Our aim is to determine the processes and physics behind metallization schemes fornormally-off InAlN-based heterostructure high electron mobility transistors with hole conductivity. InAlN with ahigh molar fraction of InN will be doped with Mg, and the ohmic and Schottky metallic stacks will be optimized. New transition metal dichalkogenide materials (TMDCs) are very promising for new device applications. However,metallization schemes for TMDCs are very challenging. TMDCs exhibit varying band gap widths in dependenceof their thickness. Our aim is to study metallization schemes for TMDCs, their topology, and explain differences between ex-foliated and grown samples, and differences between back-gated and top-gated devices in correlation with basic TMDCs properties.
Duration:	1.1.2021 – 31.12.2024

SAV-AV ČR – Research and development of advanced for defiction of gases and biomolecules
Výskum a vývoj pokročilého QCM-FET duálneho senzora reaktivovaného na báze diamantových vrstiev pre detekciu plynov a biomolekúl
Registration code:	CAS-SAS-2022-9
Program:	Other projects
Project leader:	Ing. Izsák Tibor, PhD.
Duration:	1.1.2023 – 31.12.2024