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| Príprava, charakterizácia a dopovanie ultratenkých vrstiev dichalkogenidov prechodných kovov | |
| Fabrication, characterization, and doping of ultra-thin layers of transition metal dichalcogenides | |
| Program: | VEGA |
| Project leader: | Mgr. Sojková Michaela, PhD. |
| Annotation: | Thanks to the unusual physical properties, 2D materials have been intensively studied for several years. Aninteresting group of this class of materials is transition metal dichalcogenides TMD. They have a hexagonalstructure with the individual layers bonded to each other only by weak Van der Waals bonds. This causessignificantly anisotropic properties and has a significant effect on their electronic structure. Some of them showphysically interesting correlated states (superconductivity, charge density waves). The primary goal of this projectis to prepare and study the properties of thin layers of 2 different TMD – MoS2 and PtSe2, and to study theinfluence of doping with Li and Na cations on the electrical and structural properties of these layers. Thesecondary goal is to optimize growth and doping conditions to improve the parameters of thin films, such aselectrical conductivity and charge carrier mobility which will enable the preparation of functional electroniccomponents – transistors. |
| Duration: | 1.1.2021 – 31.12.2024 |