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| CERBERUS – Farebné centrá v diamante – korelácia medzi atómovou štruktúrou a optoelektronickými vlastnosťami | |
| Colour centres in diamond – correlation between atomic structure and opto-electronic properties | |
| Program: | SRDA |
| Project leader: | Ing. Varga Marian, PhD. |
| Annotation: | The subject of the project is in the field of quantum technologies. We will prepare and characterize optically -activedefects in diamonds and correlate the atomic structures with optical properties to be used for quantum applicati ons.For a wide range of dopant concentrations, we will identify the dopant distributions and study the evolution ofdopants’ configuration in-situ, during thermal annealing, using atomic-resolution microscopy and spectroscopytechniques. We will further study the effect of annealing on the opto-electronic properties by measuringphotoluminescence, photocurrent and electroluminescence for the same set of samples. Graphene transparentelectrodes on a diamond surface will be fabricated for phototransport measurements. Diamond-based hybrid p-i-ndiodes will be prepared for electroluminescence measurements. We will focus on finding a correlation between theatomic structure and the opto-electronic properties of differently doped diamonds. This will contribute to theunderstanding of the fundamental relationship needed to efficiently design optically -active elements for diamondquantum devices. |
| Duration: | 1.9.2024 – 31.12.2027 |
| ROTOLES – Optimalizovaný rast a transportné a optické vlastnosti tenkých vrstiev vybraných topologických polokovov | |
| Optimised growth and the transport and optical properties of thin layers of selected topological semimetals | |
| Program: | SRDA |
| Project leader: | Dr. rer. nat. Hulman Martin |
| Annotation: | One of the fundamental results of quantum mechanics in the 1920s was the derivation of relativistic equations formassive fermions (Dirac), massless fermions (Weyl) and fermions that are themselves antiparticles (Majorana).Since those times, particle physics has been searching for particles representing Weyl and Majorana\’s fermions.However, their search has not yet been successful.In the last twenty years, it has been shown that the band structure of some materials has such uniquecharacteristics that the charge carriers in them can behave according to the dynamics satisfying the Dirac or Weylrelativistic equations. Such materials include compounds from the group of transition metals dichalcogenides,which we will focus on in our project.We will work with very thin layers of selected materials from this group, such as PtSe2, MoTe2 and WTe2. The firststep in the implementation of the project will be the preparation of such layers by chalcogenisation of thin films oftransition metals. Their transport and optical properties will then be thoroughly investigated. Temperaturedependent transport measurements can show us transitions between different structures of the same material. We expect that a metal-insulator transition can be observed when the thickness of such thin films is varied. Some ofthese materials can go into a superconducting state at very low temperatures. We will also try to induce this state inclose proximity, i.e. when the thin layer is in contact with another superconductor.Optical measurements will be correlated with transport measurements. We derive essential frequency-dependentcharacteristics, such as optical conductivity, from the latter. We will look for characteristics theoretically predictedfor Dirac and Weyl fermions in the optical conductivity. |
| Duration: | 1.7.2024 – 30.6.2027 |
| Nanoelsen – Nanoštrukturované tenkovrstvové materiály vyznačujúce sa slabými väzbovými interakciami pre elektronické a senzorické aplikácie | |
| Nanostructured thin-film materials characterized by weak binding interactions for electronic and sensoric applications | |
| Program: | SRDA |
| Project leader: | RNDr. Gregušová Dagmar, DrSc. |
| Annotation: | The proposed project is focused on the basic research of the preparation processes and properties ofsemiconducting sulfides of transition metals such as Mo, W and Ni and selected combinations with their oxides inthe form of mixed sulfides and oxides, as well as the possibilities of their doping with noble metals (Pt, Au) for usein gas sensors as well as in supercapacitors. We also anticipate full utilization of semiconductormicroelectronic and micromechanical techniques and micro / nanotechnologies, which can significantly contributeto qualitatively improved detection properties, low operating power consumption of gas sensors as well asincreased energy efficiency and supercapacitor lifetime. |
| Duration: | 1.7.2022 – 30.6.2026 |
| Transit2D – Tranzistory na báze 2D kovových chalkogenidov pripravených teplom podporovanou konverziou | |
| Transistors based on 2D Metal Chalcogenides Grown via Thermally Assisted Conversion | |
| Program: | SRDA |
| Project leader: | Ing. Ťapajna Milan, PhD. |
| Annotation: | 2D materials can form one-atom-thick sheets with extraordinary properties. One of the most promising classes of2D materials is the transition metal dichalcogenides (TMDs). The transition from an indirect to a direct bandgap,when the bulk materials is thinned down to a monolayer, results in unique electrical and optical properties of 2DTMDs. Post-transition metal chalcogenides (PTMCs) represents another interesting group of 2D materials. Thesematerials have wide band gap and, depending on the structure of the material, show anisotropic electrical andoptical properties. The aim of this project is the fabrication of field-effect transistors with metal-oxide-semiconductorgate (MOSFETs) based on selected TMDs and PTMCs compounds and detail analysis of their transport properties.We will focus on large-area few-layer PtSe2 and GaS/GaSe films grown by thermal assisted conversion, i.e.sulfurization and selenization. Based on the existing experiences, structural, chemical and electrical properties ofhorizontally-aligned PtSe2 films prepared by selenization will be optimized, targeting mobilities similar to thoseprepared by mechanical exfoliation. Then, MOSFET technology using both, top-gate as well as bottom-gateapproach will be developed and optimized. Atomic layer deposition and metal-oxide chemical vapor deposition(MOCVD) will be employed for gate oxide growth. GaS/GaSe few-layer films will be prepared by chalcogenization |
| Duration: | 1.7.2022 – 30.6.2026 |
| NanoMemb-RF – Moderné nanomembránové heteroštruktúry na báze GaAs pre vysoko produktívne vysokofrekvenčné prvky | |
| Advanced GaAs-based nanomembrane heterostructures for highperformance RF devices | |
| Program: | SRDA |
| Project leader: | RNDr. Gregušová Dagmar, DrSc. |
| Annotation: | The main aim of the proposed project is to expand the basic knowledge and to master the fabrication technology ofthe advanced nanomembrane AlGaAs/GaAs heterojunction devices for high-performance RF applications.Insufficient removal of the waste heat in electronic devices due to the Joule losses leading to overheating and earlydevice failure often requires foreign, high thermal conductivity substrates to be employed. As opposed to themainstream research of the GaN-based electronic devices prepared directly on sapphire or SiC, proposed GaAsbased devices will be fabricated upon self-supporting heterostructure nanomembranes transferred onto varioussubstrates. It is very timely, original, and desirable approach to extend the utilization of the GaAs-based devicesmaterial potential, as demonstrated by our preliminary results. |
| Duration: | 1.7.2022 – 30.6.2025 |