- Head: Ing. Filip Gucmann, PhD.
- Deputy Head: Ing. Milan Ťapajna, PhD.
Department III-V of semiconductors focuses primarily on the development of semiconductor technologies and devices for high-power, high-voltage, high-frequency, and optoelectronic applications—such as switching transistors, rectifying diodes, and UV photodetectors. We prepare new generations of advanced microelectronic structures and devices, subjecting them to comprehensive electrical, optical, and thermal analyses, while investigating the physical principles and phenomena that affect them.
Through the operation of our own laboratory of metal-organic chemical vapour deposition (MOCVD), equipped with three growth systems (Aixtron AIX 200 with a horizontal reactor for the growth of III-V materials and two Aixtron CCS systems with vertical reactors for the growth of III-N and Ga2O3), we actively develop the epitaxial growth technology of wide and ultra-wide bandgap compound semiconductors (particularly GaN and Ga2O3, as well as related ternary and quaternary alloys). We also engage in the preparation of heterostructures and quantum structures (e.g., InN/InAlN, InAlN/GaN, AlGaN/GaN) and their advanced in-depth material characterisation.
Research areas:
- High power and high-frequency III-N device research
- High voltage/high power devices and UV detectors based on Ga₂O₃
Current research focus:
News:
Thermal stability of gallium oxide layers: important insights for semiconductor technology - How stable are gallium oxide layers at high temperatures? Scientists from the Institute of Electrical Engineering of the Slovak Academy… 
Significant enhancement in GaAs HEMT thermal performance - Our colleagues from the department of III-V semiconductors IEE SAS, Slovak University of Technology, and Wuhan University in China have… 
Solution for efficient cooling of power Ga2O3 semiconductor devices - Gallium oxide (Ga2O3) is a promising material for manufacturing of semiconductor devices. The main advantage of Ga2O3 is its large… 
Resistive InAlN: platform for a new type of high speed electronics - There is a need for novel materials systems that can open a window for sub-THz-frequency electronics. Owing to its record…