Projects

International projects

Finished

ETMOS - Epitaxial transition metal dichalcogenides onto wide bandgap hexagonal superconductors for advanced electronics
Duration:	1. 4. 2020 - 31. 3. 2023
Evidence number:	FLAG-ERA III/2019/884/ETMOS
Program:	ERANET
Project leader:	Ing. Chromik Štefan, DrSc.
Partner countries:	France, Hungary, Italy

Optimization of the scalable growth of transition metal dichalcogenide thin films and novel heterostructures for application in electronics and advanced sensors
Duration:	1. 1. 2021 - 31. 12. 2022
Evidence number:	SAV-CNR
Program:	Bilaterálne - iné
Project leader:	Mgr. Sojková Michaela, PhD.

PULSEd laser deposition of 2D semiconductors on nitrides for advanced electronics
Duration:	1. 1. 2021 - 31. 12. 2022
Evidence number:	SAV-CNR
Program:	Bilaterálne - iné
Project leader:	RNDr. Španková Marianna, PhD
Partner countries:	Italy

Synthesis and characterization of 2D TMD-diamond functional heterostructures for sensing elements
Duration:	1. 1. 2021 - 31. 12. 2022
Evidence number:
Program:	Bilaterálne - iné
Project leader:	Ing. Vanko Gabriel, PhD.
Partner countries:	Czech Republic

Advanced Microcantilevers from Wide Bandgap Materials
Duration:	1. 3. 2020 - 31. 12. 2021
Evidence number:	DS-FR-19-0051
Program:	Bilaterálne - iné
Project leader:	Ing. Vanko Gabriel, PhD.
Partner countries:	Austria, Czech Republic

Technology and properties of superconductig and magnetic oxide films for modern electronic application
Duration:	1. 1. 2019 - 31. 12. 2021
Evidence number:
Program:	Medzivládna dohoda
Project leader:	Ing. Chromik Štefan, DrSc.
Partner countries:	Poland

An individual stimulating system with 3D nano-structure carbon/graphene based transducer and wireless heater for automated tiny insects behavior monitoring
Duration:	1. 1. 2018 - 31. 12. 2020
Evidence number:	SAS-MOST JRP 2017/1
Program:	JRP
Project leader:	Ing. Vanko Gabriel, PhD.
Partner countries:	Taiwan

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Duration:	1. 1. 2016 - 31. 12. 2018
Evidence number:	24
Program:	Medzivládna dohoda
Project leader:	Ing. Chromik Štefan, DrSc.
Partner countries:	Poland

TO-BE - Towards Oxide-Based Electronics
Duration:	1. 2. 2016 - 30. 4. 2018
Evidence number:	MP1308
Program:	COST
Project leader:	Ing. Chromik Štefan, DrSc.
Partner countries:	Austria, Belgium, Bulgaria, Croatia, Czech Republic, Denmark, Finland, France, Germany, Greece, Ireland, Israel, Italy, Latvia, Lithuania, Luxembourg, Netherlands, Norway, Poland, Portugal, Romania, Serbia, Slovenia, Spain, Sweden, Switzerland, Turkey, United Kingdom
Project website:	http://www.cost.eu/COST_Actions/mpns/MP1308

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Duration:	1. 1. 2016 - 31. 3. 2017
Evidence number:
Program:	Medziakademická dohoda (MAD)
Project leader:	Ing. Vanko Gabriel, PhD.
Partner countries:	Czech Republic

National projects

Current

Cost-effective Ga2O3-diamond heterojunction photodetectors for solar-blind UV imaging
Duration:	1. 8. 2024 - 30. 7. 2029
Evidence number:	IM-2023-87
Program:	IMPULZ
Project leader:	Ing. Varga Marian, PhD.

2D TMD-based heterostructures for electronic applications
Duration:	1. 1. 2025 - 31. 12. 2028
Evidence number:	2/0075/25
Program:	VEGA
Project leader:	Mgr. Sojková Michaela, PhD.

TECHAPHO - Ternary chalcogenide perovskites for photovoltaics
Duration:	1. 7. 2024 - 30. 6. 2028
Evidence number:	APVV-23-0202
Program:	APVV
Project leader:	Ing. Chromik Štefan, DrSc.
SAS cosolvers:	Ing. Bennár Michal, doc. RNDr. Dobročka Edmund, CSc., RNDr. Španková Marianna, PhD, Ing. Talacko Marcel, PhD.
Annotation:	The goal of the proposed project is the synthesis of ternary chalcogenides with perovskite structure and systematiccharacterization of the relationship between the composition, structure, optical properties, thermal and chemical stability with the potential in the application in photovoltaics, or other optoelectronics. The result will be a set of prepared pure ternary chalcogenides in the form of crystalline powders and thin films with known, as well as newly prepared compositions and a comprehensive characterization of their optical and electronic properties, as well as thermal and chemical stability. Ternary chalcogenides will be prepared also by wet approach at lower temperature up to 350 °C in the form of nanocrystals which will be characterized in terms of their structure and morphology.Proof-of-concept solar cell will be prepared, which has not yet been reported in the literature. The optimalization will be done based on performance measurements.

CERBERUS - Colour centres in diamond – correlation between atomic structure and opto-electronic properties
Duration:	1. 9. 2024 - 31. 12. 2027
Evidence number:	APVV-23-0361
Program:	APVV
Project leader:	Ing. Izsák Tibor, PhD.
SAS cosolvers:	Mgr.Phil. Ahmad Faizan, Ing. Gucmann Filip, PhD., Mgr. Hrdá Jana, PhD., RNDr. Hušeková Kristína, Mgr. Hutár Peter, PhD., MSc. Keshtar Javad, Mgr. Kotrusz Peter, PhD., Mgr. Kozak Andrii, PhD., Ing. Precner Marián, PhD., doc. Ing. Skákalová Viera, DrSc., Mgr. Sojková Michaela, PhD., Ing. Ťapajna Milan, PhD.
Annotation:	The subject of the project is in the field of quantum technologies. We will prepare and characterize optically -activedefects in diamonds and correlate the atomic structures with optical properties to be used for quantum applicati ons.For a wide range of dopant concentrations, we will identify the dopant distributions and study the evolution ofdopants’ configuration in-situ, during thermal annealing, using atomic-resolution microscopy and spectroscopytechniques. We will further study the effect of annealing on the opto-electronic properties by measuringphotoluminescence, photocurrent and electroluminescence for the same set of samples. Graphene transparentelectrodes on a diamond surface will be fabricated for phototransport measurements. Diamond-based hybrid p-i-ndiodes will be prepared for electroluminescence measurements. We will focus on finding a correlation between theatomic structure and the opto-electronic properties of differently doped diamonds. This will contribute to theunderstanding of the fundamental relationship needed to efficiently design optically -active elements for diamondquantum devices.

New hybrid semiconductor structures for ionizing radiation detection
Duration:	1. 1. 2024 - 31. 12. 2027
Evidence number:	2/0063/24
Program:	VEGA
Project leader:	Mgr. Zaťko Bohumír, PhD

PEROVCHIR - Effect of the application of organic molecules on the properties of perovskite thin-film structures
Duration:	1. 7. 2024 - 31. 12. 2027
Evidence number:	APVV-23-0238
Program:	APVV
Project leader:	RNDr. Španková Marianna, PhD
SAS cosolvers:	Ing. Bennár Michal, doc. RNDr. Dobročka Edmund, CSc., Ing. Chromik Štefan, DrSc., Mgr. Mosnáček Jaroslav, DrSc., Mgr. Sojková Michaela, PhD., RNDr. Španková Marianna, PhD, Ing. Talacko Marcel, PhD., Ing. Vanko Gabriel, PhD.
Annotation:	In recent years, sufficient experimental evidence has accumulated that adsorbed organic chiral molecules affectthe superconducting properties of YBa2Cu3O7-x (YBCO) films. In some cases, an increase in their critical temperature Tc can be observed. On the other hand, it has been shown that in the case of ferromagnetic layers (e.g., cobalt), the application of chiral molecules can lead to a change in magnetization without the use of an electric current. An important role here is played by spin. Spin introduces an additional degree of freedom into the system, allowing devices, for example, to reduce electrical consumption or increase their computational capacity. Spintronic devices have become an attraction in electronics; however, problems associated with controlling spin remain a significant challenge. A unique way of manipulating spin is through the effect known as chirality-induced spin selectivity (CISS), which results from the specific structure of organic chiral molecules. The project focuses on the preparation and characterization of simple heterostructures and their interaction with chiral polymers deposited on the film surface. Specifically, it deals with the influence of chiral lactic acid on perovskite thin films, where the selected perovskites are high-temperature superconductor YBCO and ferromagnet La1-xSrxMnO3 (LSMO).

PIRADUNEW - Perspective ionizing radiation detectors for the uncovered neutron energy window
Duration:	1. 7. 2023 - 30. 6. 2027
Evidence number:	APVV-22-0382
Program:	APVV
Project leader:	Mgr. Zaťko Bohumír, PhD
SAS cosolvers:	RNDr. Boháček Pavol, CSc., Ing. Izsák Tibor, PhD., Ing. Kováčová Eva, MSc. Parsa Saeb Saviz, Mgr. Sekáčová Mária, Ing. Varga Marian, PhD.
Annotation:	The subject of the presented project is the optimization and preparation of semiconductor detection structuresbased on 4H-SiC and polycrystalline diamond suitable for neutron detection. As part of the project, single detectorswill be prepared and investigated, especially for neutron energies from 100 keV to several MeVs. There arecurrently few sensitive detectors in this area of neutron energy. The advantages of SiC and polycrystalline diamond are the high radiation and temperature resistance of structures. The high spectrometric capability of SiC detectors is also important, especially when detecting neutrons with energies below 1 MeV. Polycrystalline diamond is m ore affordable than SiC, and our first preliminary results show its promising detection properties, especially when detecting ionizing particles. Another advantage of both types of semiconductors is the low sensitivity to gamma radiation, which is almost always present in the event that neutrons are formed during a nuclear reaction. This gamma ray enhances the background and impairs the sensitivity of the detectors currently in use. Pixel sensors for the Timepix/Medipix reading chip will also be developed and investigated. Prototypes of the radiation camera will be tested and calibrated using a monoenergetic neutron source.

New semiconductor materials for pixel sensors with applications in digital radiography
Duration:	1. 1. 2024 - 30. 6. 2026
Evidence number:	09I05-03-V02-00073
Program:	Plán obnovy EÚ
Project leader:	Mgr. Zaťko Bohumír, PhD

Perspective ionizing radiation detectors for high-energy particles
Duration:	1. 7. 2024 - 30. 6. 2026
Evidence number:	09I03-03-V06-00108
Program:	Plán obnovy EÚ
Project leader:	Mgr. Zaťko Bohumír, PhD
Annotation:	The aim of the project is to procure a research infrastructure that will be used during the implementation of the project APVV-22-0382 and for conducting further independent research and development carried out by the organization.he knowledge gained will be used to develop new ultra-thin, low-friction coatings for various metal substrates based on 2D materials, suitable for use in vacuum environments.

Advanced 2D based hybrid supercapacitor devices
Duration:	1. 3. 2024 - 30. 6. 2026
Evidence number:	09I05-03-V02-00037
Program:	Plán obnovy EÚ
Project leader:	Mgr. Sojková Michaela, PhD.

Study of TMD-based 2D heterostructures (TO-DO)
Duration:	1. 7. 2024 - 30. 6. 2026
Evidence number:	SK-AT-23-0021
Program:	APVV
Project leader:	Mgr. Sojková Michaela, PhD.

Large-scale production and characterization of 2D materials
Duration:	1. 9. 2023 - 30. 6. 2026
Evidence number:	09I03-03-V02-00044
Program:	Plán obnovy EÚ
Project leader:	Mgr.Phil. Ahmad Faizan

Modification of properties of superconducting, ferromagnetic, oxide films and structures for advanced electronics
Duration:	1. 1. 2022 - 31. 12. 2025
Evidence number:	2/0140/22
Program:	VEGA
Project leader:	RNDr. Španková Marianna, PhD
Annotation:	We prepare and study oxide – ferromagnetic and dielectric perovskite thin films and micro- and nano structures as well as selected current superconducting films. YBa2Cu3Ox (YBCO) and La0.67Sr0.33MnO3 (LSMO) microstrips will be exposed different types of organic molecules to study their influence on the superconducting and ferromagnetic film properties. Following the results of the previous VEGA project, we will continue to study the superconductor S/ferromagnet F and S/F/S structures focusing on a creation of magnetic inhomogeneities with the aim to increase the triplet component of superconductivity and resolve the phenomenom of S/F thin films interaction (proximity effect). As part of the project, we will investigate the possibility of superconducting behavior of a two-dimensional MoS2 system deposited by pulsed laser deposition.

GRaDe - Growth and Radiation Mechanisms in Diamond Hybrid Detectorsd Radiation Mechanisms in Diamond Hybrid Detectors
Duration:	1. 7. 2022 - 30. 6. 2025
Evidence number:	SK-CZ-RD_21/0016
Program:	APVV
Project leader:	Mgr. Zaťko Bohumír, PhD

Finished

Preparation and properties of superconducting and magnetic oxide films for modern electronic applications
Duration:	1. 1. 2023 - 31. 12. 2024
Evidence number:	SAV-PAV
Program:	Vedecko-technické projekty
Project leader:	Ing. Chromik Štefan, DrSc.

Fabrication, characterization, and doping of ultra-thin layers of transition metal dichalcogenides
Duration:	1. 1. 2021 - 31. 12. 2024
Evidence number:	2/0059/21
Program:	VEGA
Project leader:	Mgr. Sojková Michaela, PhD.
SAS cosolvers:	Dérer Ján, Gerboc Michal, Dr. rer. nat. Hulman Martin, Ing. Kováčová Eva, Ing. Lobotka Peter, CSc., RNDr. Pribusová Slušná Lenka, PhD., RNDr. Španková Marianna, PhD, Ing. Talacko Marcel, PhD., Ing. Vanko Gabriel, PhD., Ing. Varga Marian, PhD.
Annotation:	Thanks to the unusual physical properties, 2D materials have been intensively studied for several years. Aninteresting group of this class of materials is transition metal dichalcogenides TMD. They have a hexagonalstructure with the individual layers bonded to each other only by weak Van der Waals bonds. This causessignificantly anisotropic properties and has a significant effect on their electronic structure. Some of them showphysically interesting correlated states (superconductivity, charge density waves). The primary goal of this projectis to prepare and study the properties of thin layers of 2 different TMD - MoS2 and PtSe2, and to study theinfluence of doping with Li and Na cations on the electrical and structural properties of these layers. Thesecondary goal is to optimize growth and doping conditions to improve the parameters of thin films, such aselectrical conductivity and charge carrier mobility which will enable the preparation of functional electroniccomponents - transistors.

Study of the influence induced by organic-based spin filters applied on perovskites
Duration:	1. 1. 2024 - 31. 12. 2024
Evidence number:	APP473
Program:	DoktoGrant
Project leader:	Ing. Bennár Michal

SAV-AV ČR - Research and development of advanced for defiction of gases and biomolecules
Duration:	1. 1. 2023 - 31. 12. 2024
Evidence number:	CAS-SAS-2022-9
Program:	Iné projekty
Project leader:	Ing. Izsák Tibor, PhD.

TMD/diamond heterostructures: Fabrication, characterization and applications
Duration:	1. 8. 2020 - 31. 7. 2024
Evidence number:	19MRP0010
Program:	MoRePro
Project leader:	Ing. Varga Marian, PhD.

Long-range proximity effect in superconductor / ferromagnet heterostructures
Duration:	1. 7. 2020 - 31. 12. 2023
Evidence number:	19-0303
Program:	APVV
Project leader:	Ing. Chromik Štefan, DrSc.
Other cosolvers:	FMFI UK

Radiation resistant semiconductor sensors for utilization in harsh environment
Duration:	1. 1. 2020 - 31. 12. 2023
Evidence number:	2/0084/20
Program:	VEGA
Project leader:	Mgr. Zaťko Bohumír, PhD
Annotation:	Recently, detectors of ionizing radiation are important part of many fields of science and research. The object of proposal is research of various semiconductor detector structures based on Si, GaAs, 4H-SiC and CdTe as a detector of ionizing radiation where 4H-SiC is wide bandgap semiconductor which is radiation resistant material suitable for long term work in harsh environment. This includes optimization of prepared sensor in term of utilization and also what type of radiation will be detected. Also passivation and encapsulation is important in long term word of prepared sensors. The contribution will be also in the simulation due to optimization of size and thickness of sensor contacts and passivation. The prepared structures will be characterized by electrical (curren-voltage and capacitance-voltage measurements) and spectrometric measurements using standartly used radioisotope sources. Also radiation hardness of samples will be tested (increased temperature, ionizing environment).

High-performance curved X-ray optics prepared by advanced nanomachining technology
Duration:	1. 1. 2021 - 31. 12. 2023
Evidence number:	2/0041/21
Program:	VEGA
Project leader:	Ing. Zápražný Zdenko, PhD.
SAS cosolvers:	doc. RNDr. Dobročka Edmund, CSc., Ing. Halahovets Yuriy, PhD., Ing. Jergel Matej, DrSc., RNDr. Korytár Dušan, CSc., Mgr. Nádaždy Peter, PhD., Dr. Rer. Nat. Šiffalovič Peter, DrSc., Mgr. Zaťko Bohumír, PhD
Annotation:	The project is focused on the research and development of new types of X-ray optics with highly accurate curvedactive surfaces. The surfaces will be prepared by an innovative nanomachining technology. We will investigatethe application of nanomachining technology to a special case of X-ray optics with curved surfaces, which is aparabolic refractive lens operating in the transmission geometry. The second special case we will focus on will bethin crystal monochromators with different thicknesses in a range of 20-2000 micrometers. Such elements can beused for example as beam splitters in modern X-ray free-electron lasers (XFEL), bent crystals in Johanssonmonochromators for spectroscopic applications, or they can also be used in particle accelerators for beamsteering. The developed elements of curved X-ray optics will be tested in real X-ray metrology and X-ray imagingexperiments using laboratory or synchrotron X-ray sources and highly sensitive directly converting X-raydetectors Pilatus and Medipix.

Energy Harvesting Device Based on Micropillar Structures
Duration:	1. 1. 2022 - 31. 12. 2023
Evidence number:	SK-TW-21-0006
Program:	APVV
Project leader:	Ing. Vanko Gabriel, PhD.

Radiation harder sensor for X-ray imaging of higher quality
Duration:	1. 7. 2019 - 30. 6. 2023
Evidence number:	18-0273
Program:	APVV
Project leader:	Mgr. Zaťko Bohumír, PhD

Advanced Microcantilevers from Wide Bandgap Materials
Duration:	1. 3. 2020 - 31. 12. 2022
Evidence number:	DS-FR-19-0051
Program:	APVV
Project leader:	Ing. Vanko Gabriel, PhD.

Research of radiation resistant semiconductor detector for nuclear energies
Duration:	1. 7. 2019 - 31. 12. 2022
Evidence number:	18-0243
Program:	APVV
Project leader:	Mgr. Zaťko Bohumír, PhD

Perovskite thin films and structures for modern electronics and sensorics
Duration:	1. 1. 2018 - 31. 12. 2021
Evidence number:	2/0117/18
Program:	VEGA
Project leader:	RNDr. Španková Marianna, PhD
Annotation:	We prepare different types of perovskite films -ferromagnetic, superconducting, dielectric- (thickness up to 100nm) and micro- and nano structures. YBa2Cu3Ox superconducting microstrips will be irradiated by electrons (30keV) with the aim to create channels for easy vortex motion. We also focus on detailed study of Si/dielectric layerinterface using unconventional materials (SrO, TiN) with the aim to enable epitaxial growth of buffer layersnecessary for realization of uncooled microbolometers on the base of La0.67Sr0.33MnO3 films working and atfrequencies in THz range. Beside the Bi4Ti3O12 studied so far different types of other buffer layers will be testedin order to develop new types of bolometers. We continue in study of perovskite superconductor S/ferromagnet Fand S/F/S structures with the aim to resolve the phenomenom of S/F thin films interaction (proximity effect). Theimplementation of pi-type Josephson junction in digital and quantum circuits may solve some problems of superconducting qubits.

Advanced monochromators with added functionality of the beam conditioning for X-ray metrology and X-ray imaging
Duration:	1. 1. 2018 - 31. 12. 2020
Evidence number:	2/0092/18
Program:	VEGA
Project leader:	Ing. Zápražný Zdenko, PhD.

Detection of ionizing particles using sensors base on semi-insulating GaAs and 4H-SiC for high energy physics
Duration:	1. 1. 2016 - 31. 12. 2019
Evidence number:	2/0152/16
Program:	VEGA
Project leader:	Mgr. Zaťko Bohumír, PhD
Annotation:	The submitted project concern with research of semiconductor detectors based on semi-insulating GaAs and high quality 4H-SiC epitaxial layer as a detectos of ions and fast neutrons, which includes: - the technology study of preparation optimized detection structures of ionizing radiation; - simulation of detection performance of structures and their optimization in term of area and thickness of used metalization contacts as well as whole detection volume of structures; - study of physical and electrical properties of prepared structures, measurement of detection performances of detector structures using alpha particles, high energy ions (40 MeV Xe+), fast neutrons; - investigation of radiation hardness of prepare structures against high energy ions (Kr+, Xe+ 167 MeV) and electrons (5 MeV), study of electrical and detection parameters; - optimization and desing of connected spectrometry chain, which includes modifying and adaption of preamplifier with the aim of reaching best energy resolution.

Investigation of advanced materials and structures for photoelectrochemical applications
Duration:	1. 1. 2016 - 31. 12. 2019
Evidence number:	1/0651/16
Program:	VEGA
Project leader:	Ing. Huran Jozef, CSc.

High temperature characterization, integration and reliability of MEMS pressure sensors based on AlGaN/GaN
Duration:	1. 1. 2017 - 31. 12. 2019
Evidence number:	2/0150/17
Program:	VEGA
Project leader:	Ing. Vanko Gabriel, PhD.
Annotation:	The project deals with the design, technology and characterization of high temperature stable electroniccomponents integrable with MEMS pressure sensors based on the AlGaN / GaN piezoelectric material systemwhich can operate at extreme ambient conditions, especially at elevated temperatures. The project is based onthe proven concept and manufactured functional prototype of pressure sensor, which has so far not been verifiedunder real operating conditions. The proposed project is original in the high-temperature characterization,reliability testing and exploring the possibilities of integration of passive and active components prepared fromAlGaN/GaN heterostructures . Expected results and knowledge of the characteristics and behavior of thesepromising materials and components enable to design devices and circuits as well as technological improvementfor achieving competitive and qualitatively new sensor systems applicable in industry.

Research of the nanomachining technology for active surfaces of the new generation of the X-ray optics
Duration:	1. 7. 2015 - 30. 6. 2019
Evidence number:	14-0745
Program:	APVV
Project leader:	Ing. Zápražný Zdenko, PhD.

Broadband MEMS detector of terahertz radiaton
Duration:	1. 7. 2015 - 30. 6. 2018
Evidence number:	14-0613
Program:	APVV
Project leader:	Ing. Vanko Gabriel, PhD.

Design and Fabrication of Diamond-on-GaN Hybrid Structures for MEMS
Duration:	1. 5. 2015 - 30. 4. 2018
Evidence number:	0068/01/01
Program:	SASPRO
Project leader:	Mgr. Babchenko Oleg, PhD.
Annotation:	The project is oriented on bilateral transfer of knowledge, design of hybrid electronic devices with efficient thermal management, e.g. AlGaN/GaN based devices passivated by diamond and/or diamond-based devices covered by metal oxides, manufacturing of such devices and their characterisation. It is expected that the project resolving will enable fabrication of hybrid high power electronic devices and/or micro-electro-mechanical systems potentially operating at high frequencies and/or high temperatures.