Article list
In the past decade, research on topological insulators became a hot topic in various fields of physics. Their unusual properties excite the interest of scientists focused on basic as well as applied research. One of the most intriguing features of topological insulators is the presence of a conductive surface in contrast to the insulating bulk….
There is a need for novel materials systems that can open a window for sub-THz-frequency electronics. Owing to its record calculated electron velocity, InN is among the hottest candidates. Recent evaluation of the state-of-the art InN grown by molecular-beam-epitaxy (MBE) indicated the electron velocity of about 1 Í 108 cms-1. However, experimental demonstration of InN-channel transistors…
Time: November 30, 2023 at 10:00 a.m.
IEE SAS invite you to a lecture by Dr. Chao Yuan (Instit. Technol. Sci, Wuhan Univ., China). November 10, 2023, 10,00 a.m., in IEE SAS meeting room 101. Pump-probe thermoreflectance techniques for non-contact and non-invasively characterizing the thermal properties of wide bandgap semiconductors Abstract: Pump-probe thermoreflectances (pump-probe TR) have emerged as the powerful and versatile tools for…
Time: October 20, 2023 at 10:00 a.m.
Gallium nitride (GaN)-based semiconductors are increasingly used for the fabrication of highly efficient power converters. Our colleagues have succeeded in confirming the functionality of an original concept for a vertical power transistor. Modern GaN power transistors with lateral channel geometry are gradually commercialized and used in electronic industry. Compared to this concept, the vertical geometry…
Time: October 6, 2023 at 10:00 a.m.
The 2023 IEEE 13th International Conference “Nanomaterials: Applications & Properties” was held on Sept. 10-15, 2023, in Bratislava, Slovakia. The Conference was organized through a partnership between the IEEE Nanotechnology Council, Institute of Electrical Engineering SAS, Slovak University of Technology in Bratislava, and Sumy State University, with endorsements and support from the IEEE Magnetics Society. More info: IEEE NAP-2023…
August 23, 2023 at 10,00 a.m. Ing. Ondrej Pohorelec Supervisor: RNDr. Dagmar Gregušová, DrSc. Theme: Názov: Hole channel GaN-based transistor for power electronics Abstract: This dissertation thesis deals with threshold voltage instabilities in normally-off transistor with unintentional hole channel and a preparation of InAlN/GaN transistor with intentional hole channel. Theoretical parts summarize properties of the…
During the visit of the Slovak-Taiwanese Commission for Economic Cooperation, representatives of the Institute of Electrical Engineering Slovak Academy of Sciences (ElÚ SAV) signed a license agreement and a memorandum of understanding with the Industrial Technology Research Institute (ITRI), Taiwan. Under the license agreement, the IEE SAS will build-up a laboratory for reliability analysis of…