Projects

Ing. Stanislav Hasenöhrl

National

Current
  • Vertical GaN Power Devices with Semi-Insulating Channel and Innovative 3D Gate-Source Architecture for Increased-Switching Performance
    Program: SRDA
    Duration: 1. 9. 2026 – 31. 8. 2030
  • Vertical GaN MOS transistors with semi-insulating channel and enhanced off-state breakdown performance
    Program: VEGA
    Duration: 1. 1. 2026 – 31. 12. 2029
  • Novel heterostructures for (sub)THz electronics
    Program: SRDA
    Duration: 1. 9. 2025 – 31. 8. 2029
  • Gallium oxide power transistors for high-voltage operation
    Program: SRDA
    Duration: 1. 9. 2025 – 31. 8. 2029
Finished
  • Critical aspects of the growth for a new generation of III-N devices
    Program: VEGA
    Duration: 1. 1. 2022 – 31. 12. 2025
  • p-GaN electronics for energy savings and beyond-CMOS circuits
    Program: SRDA
    Duration: 1. 7. 2022 – 30. 6. 2025
Employees