Projects

Ing. Ján Kuzmík, DrSc.

International

Current
  • European Innovative GaN Advanced Microwave Integration
    Program: EDF
    Duration: 15. 12. 2022 – 14. 12. 2026
  • Heterogeneous Material and Technological Platform for a New Domain of Power Nanoelectronics
    Program: Horizon Europe
    Duration: 1. 12. 2022 – 30. 11. 2025
  • European Network for Innovative and Advanced Epitaxy
    Program: COST
    Duration: 1. 11. 2021 – 30. 10. 2025
Finished
  • Highly Safe GaN Metal-Oxide-Semiconductor Transistor Switch
    Program: International Visegrad Fund (IVF)
    Duration: 1. 10. 2015 – 30. 3. 2019
  • GaN-based normally-off high power switching transistor for efficient power converters
    Program: FP7
    Duration: 1. 9. 2011 – 30. 8. 2014
  • Technology and properties of GaN-based MOS HFET transistors with high-k dielectric
    Program: Inter-governmental agreement
    Duration: 1. 1. 2005 – 31. 12. 2006

National

Current
  • InN: Breaking the Limits of Solid-State Electronics
    Program:
    Duration: 1. 11. 2023 – 30. 6. 2026
  • Critical aspects of the growth for a new generation of III-N devices
    Program: VEGA
    Duration: 1. 1. 2022 – 31. 12. 2025
  • p-GaN electronics for energy savings and beyond-CMOS circuits
    Program: SRDA
    Duration: 1. 7. 2022 – 30. 6. 2025
Finished
  • Vertical GaN MOSFET for power switching applications
    Program: SRDA
    Duration: 1. 7. 2019 – 30. 6. 2022
  • Advanced III-N devices for energy and information transfer
    Program: VEGA
    Duration: 1. 1. 2018 – 31. 12. 2021
  • GaN Monolithic Integrated Circuits
    Program: SRDA
    Duration: 1. 7. 2016 – 30. 6. 2019
  • Transistors with InN channel for THz microwaves and logic
    Program: SRDA
    Duration: 1. 7. 2016 – 30. 6. 2019
  • GaN-based normally-off high power switching transistor for efficient power converters
    Program: SRDA
    Duration: 1. 1. 2016 – 31. 12. 2016
  • Monolithic integration of depletion- and enhancement-mode InAlN/GaN HFET transistors
    Program: SRDA
    Duration: 1. 7. 2012 – 30. 6. 2015
  • -
    Program: SRDA
    Duration: 1. 1. 2011 – 31. 12. 2014
  • Towards next generation of III-N high-electron-mobility transistors
    Program: SRDA
    Duration: 1. 5. 2011 – 30. 4. 2014
Employees