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Current

NovelTHz - Novel heterostructures for (sub)THz electronics
Duration:	1. 9. 2025 - 31. 8. 2029
Evidence number:	APVV-24-0166
Program:	APVV
Project leader:	Ing. Kuzmík Ján, DrSc.
SAS cosolvers:	Ing. Blaho Michal, PhD., Ing. Eliáš Peter, RNDr. Gregušová Dagmar, DrSc., Ing. Gucmann Filip, PhD., Ing. Hasenöhrl Stanislav, MSc. Chidambaram Roshan Jeevan , Mgr. Laurenčíková Agáta, PhD., Mgr. Nádaždy Peter, PhD., Ing. Pohorelec Ondrej, PhD., Ing. Rosová Alica, CSc., Ing. Stoklas Roman, PhD., Ing. Zápražný Zdenko, PhD.
Annotation:	The speed and complexity of Si CMOS digital logic circuits was kept increasing by shrinking the Si MOSFETtransistors, but this cannot be continued in the future. Further progress, essential for higher capacity and energyefficient computers, may be realized by replacing the n-type MOSFET transistor channel with a III-V semiconductorproviding a significant increase of the electron velocity. Similarly, there is an increasing interest in using THzfrequencies in ultra-high-speed information and communication systems, such as wireless communication, or ininfra-red imaging systems and spectroscopy detection. InN has been recognized as a far-reaching candidate forultra-high-speed electronics since almost two decades ago. Indeed, very recently these expectations weresupported by us extracting the electron drift velocity of 1 ×10e8 cm/s in 775-nm thick molecular-beam epitaxygrown InN, the highest ever reported value in any semiconductor material. Unfortunately, because of the largelattice misfit to typically used GaN templates, thinner InN layers suffer from large density of defects and lowelectron mobility and consequently, no InN-based microwave high-electron mobility transistor has beendemonstrated yet. The proposed project aims on extending our present vast knowledge in the field of the physics,growth and implementation of InN-channel heterostructures and to promote novel epitaxial techniques which areZákladný výskum / Basic researchAPVV-24-0166Akronym: NovelTHz 11.09.2025 11:28 Strana/Page: 2VV 2024necessary for ultra-high-speed electronics of (sub)THz frequency range being viable. We aim particularly onenhancement of the crystallographic and material quality of proposed heterostructures by implementing novelMOCVD techniques such as: i/ Flow modulation epitaxy, ii/ Growth on variously inclined sapphire, iii/Heterostructures capping and charge manipulation by polarization, and aim to achieve iv/ Demonstration andqualification of novel III-N heterostructures for (sub)THz transistor electronics.

GO4HV - Gallium oxide power transistors for high-voltage operation
Duration:	1. 9. 2025 - 31. 8. 2029
Evidence number:	APVV-24-0325
Program:	APVV
Project leader:	Ing. Gucmann Filip, PhD.
SAS cosolvers:	doc. RNDr. Dobročka Edmund, CSc., Mgr. Egyenes Fridrich, PhD., Ing. Eliáš Peter, RNDr. Gregušová Dagmar, DrSc., Ing. Gucmann Filip, PhD., Ing. Hasenöhrl Stanislav, Ing. Hrubišák Fedor, RNDr. Hušeková Kristína, MSc. Chidambaram Roshan Jeevan , MTech. Chouhan Hemendra, MSc. Keshtar Javad, Ing. Krettová Miriam, Mgr. Laurenčíková Agáta, PhD., Ing. Rosová Alica, CSc., Ing. Sobota Michal, PhD., Ing. Ťapajna Milan, PhD.
Annotation:	In this project we will design, fabricate and test new Gallium oxide (GaO)-based power switching metal-oxidesemiconductor field-effect transistor (MOSFET) devices for high-voltage operation. We will develop high-qualityepitaxial GaO films on sapphire, SiC, and AlN/Si substrates using newly-purchased commercial Aixtron CCSMOCVD system capable of growth on 2-4 inch wafers. One of the main focuses of the project will be on theimprovement of heteroepitaxial GaO films, targeting the engineering of in-plane rotational domains (IRDs), typicallypresent when GaO is grown on standard foreign substrates with hexagonal surface symmetry. We willsystematically optimize the growth parameters and introduce engineered substrates to break the surfacesymmetry, allow for epitaxial lateral overgrowth, and promote the growth of specific GaO crystal orientations. As aresult, we expect lowered density of dislocations in GaO films and improved mobility of charge carriers, effectivelyincreasing output current in the fabricated MOSFETs. By means of by TCAD-based electrothermal simulations wewill focus on MOSFET design to achieve breakdown voltage >1 kV by introduction of various field plate structures,while maintaining the low on-state resistance. Device layout will also be optimized do achieve enhanced thermalZákladný výskum / Basic researchAPVV-24-0325Akronym: GO4HV 04.02.2025 15:35 Strana/Page: 2VV 2024performance for improved device reliability and lifetime. Using the optimized device structure, MOSFETs will befabricated via conventional photolightography, dry etching, PVD, ALD, and PE-CVD deposition techniques.Electrical properties including device reliability and breakdown will be analysed and used to verify the TCADsimulations and further improve design of the GaO MOSFETs.

ZnižStrStr - Reduction of AC losses in a cable model made of striated hightemperature superconductors
Duration:	1. 9. 2025 - 31. 8. 2029
Evidence number:	APVV-24-0061
Program:	APVV
Project leader:	Mgr. Seiler Eugen, PhD
SAS cosolvers:	Ing. Frolek Lubomír, Ing. Kucharovič Martin, PhD., Ing. Kujovič Tomáš, PhD.
Annotation:	High-temperature superconductors based on REBCO (Rare Earth Barium Copper Oxide) are used in magnetwindings for devices with high magnetic fields (>10 T) such as particle accelerators or nuclear fusion reactors.During the operation of these devices, alternating current (AC) losses occur and REBCO tapes are affected bycyclic electromagnetic forces, arising during the time change of the magnetic field, which can cause failure of thedevice. The aim of this project will be the development of a striated REBCO tapes and a TORT (Tapes on RoundTube) type cable with low AC losses and high mechanical toughness (for example fatigue strength). We plan toachieve the reduction of AC losses by striating the REBCO tape and altering the material of the cable former.However, after such process, it is necessary to protect the striated REBCO layers with an additional (multi)layer forthe purpose of chemical and thermal stabilization. The former of the cable will be 3D printed from a compositeZákladný výskum / Basic researchAPVV-24-0061Akronym: ZnižStrStr 23.09.2025 10:50 Strana/Page: 2VV 2024material based on PETG CF (polyethylene terephthalate glycol reinforced with carbon fiber), with much lowerelectrical conductivity than previously used formers. By altering the material of the former in the TORT cable, wecan reduce the total magnetization losses by decreasing the eddy currents, which were contributed by the copperformer. According to numerical calculations (ANSYS, COMSOL), we apply the corresponding mechanical load toREBCO tapes (untreated/striated) and cables from these REBCO tapes. Afterwards, we determine the mechanicaltoughness of the cables, which will be optimized by studying the REBCO tape damage using SEM, FIB, XPS andERDA methods. A successful production of a short TORT cable with a stabilization (multi)layer wound on acomposite former will be a confirmation of the suitability of this cable concept. By combining the above materials,we can create an innovative superconducting cable with significantly reduced AC losses and high mechanicaltoughness.

Cost-effective Ga2O3-diamond heterojunction photodetectors for solar-blind UV imaging
Duration:	1. 8. 2024 - 30. 7. 2029
Evidence number:	IM-2023-87
Program:	IMPULZ
Project leader:	Ing. Varga Marian, PhD.

2D TMD-based heterostructures for electronic applications
Duration:	1. 1. 2025 - 31. 12. 2028
Evidence number:	2/0075/25
Program:	VEGA
Project leader:	Mgr. Sojková Michaela, PhD.

Thermal management in Ga2O3 based electronic and optoelectronic devices
Duration:	1. 1. 2025 - 31. 12. 2028
Evidence number:	2/0156/25
Program:	VEGA
Project leader:	Ing. Ťapajna Milan, PhD.
SAS cosolvers:	Ing. Blaho Michal, PhD., Mgr. Egyenes Fridrich, PhD., Ing. Eliáš Peter, Ing. Fedor Ján, PhD, RNDr. Gregušová Dagmar, DrSc., Ing. Gucmann Filip, PhD., RNDr. Hušeková Kristína, Mgr. Kozak Andrii, PhD., RNDr. Kučera Michal, PhD, Ing. Pohorelec Ondrej, PhD.
Annotation:	Ga2O3 represents a promising semiconductor material for future high-power electronic devices and UV and X-raydetectors. A major drawback of Ga2O3 is its low thermal conductivity, which may represent a challenge in thermalmanagement of power devices operating in the ON state. The aim of this project is to develop advancedstrategies for thermal management in Ga2O3 based electronic and optoelectronic devices. First, we will focus onthe growth development of Ga2O3 layers on high-thermally conductive (HTC) substrates such as SiC anddiamond using three different CVD methods. We will investigate and optimize transport and thermal properties ofthe Ga2O3 layer and Ga2O3/HTC substrate thermal boundary conductance. The second goal is to developtechnology for CVD growth of synthetic udoped diamond heat-spreading layer on the Ga2O3 based electronicdevices. Finally, we will develop heteroepitaxial pn photodiodes based on all-polycrystalline p-typediamond/n-type Ga2O3 heterostructure for solar-blind photodetectors.

TECHAPHO - Ternary chalcogenide perovskites for photovoltaics
Duration:	1. 7. 2024 - 30. 6. 2028
Evidence number:	APVV-23-0202
Program:	APVV
Project leader:	Ing. Chromik Štefan, DrSc.
SAS cosolvers:	Ing. Bennár Michal, doc. RNDr. Dobročka Edmund, CSc., RNDr. Španková Marianna, PhD, Ing. Talacko Marcel, PhD.
Annotation:	The goal of the proposed project is the synthesis of ternary chalcogenides with perovskite structure and systematiccharacterization of the relationship between the composition, structure, optical properties, thermal and chemical stability with the potential in the application in photovoltaics, or other optoelectronics. The result will be a set of prepared pure ternary chalcogenides in the form of crystalline powders and thin films with known, as well as newly prepared compositions and a comprehensive characterization of their optical and electronic properties, as well as thermal and chemical stability. Ternary chalcogenides will be prepared also by wet approach at lower temperature up to 350 °C in the form of nanocrystals which will be characterized in terms of their structure and morphology.Proof-of-concept solar cell will be prepared, which has not yet been reported in the literature. The optimalization will be done based on performance measurements.

CERBERUS - Colour centres in diamond – correlation between atomic structure and opto-electronic properties
Duration:	1. 9. 2024 - 31. 12. 2027
Evidence number:	APVV-23-0361
Program:	APVV
Project leader:	Ing. Izsák Tibor, PhD.
SAS cosolvers:	Mgr.Phil. Ahmad Faizan, Ing. Gucmann Filip, PhD., Mgr. Hrdá Jana, PhD., RNDr. Hušeková Kristína, Mgr. Hutár Peter, PhD., MSc. Keshtar Javad, Mgr. Kotrusz Peter, PhD., Mgr. Kozak Andrii, PhD., Ing. Precner Marián, PhD., doc. Ing. Skákalová Viera, DrSc., Mgr. Sojková Michaela, PhD., Ing. Ťapajna Milan, PhD.
Annotation:	The subject of the project is in the field of quantum technologies. We will prepare and characterize optically -activedefects in diamonds and correlate the atomic structures with optical properties to be used for quantum applicati ons.For a wide range of dopant concentrations, we will identify the dopant distributions and study the evolution ofdopants’ configuration in-situ, during thermal annealing, using atomic-resolution microscopy and spectroscopytechniques. We will further study the effect of annealing on the opto-electronic properties by measuringphotoluminescence, photocurrent and electroluminescence for the same set of samples. Graphene transparentelectrodes on a diamond surface will be fabricated for phototransport measurements. Diamond-based hybrid p-i-ndiodes will be prepared for electroluminescence measurements. We will focus on finding a correlation between theatomic structure and the opto-electronic properties of differently doped diamonds. This will contribute to theunderstanding of the fundamental relationship needed to efficiently design optically -active elements for diamondquantum devices.

New hybrid semiconductor structures for ionizing radiation detection
Duration:	1. 1. 2024 - 31. 12. 2027
Evidence number:	2/0063/24
Program:	VEGA
Project leader:	Mgr. Zaťko Bohumír, PhD

PEROVCHIR - Effect of the application of organic molecules on the properties of perovskite thin-film structures
Duration:	1. 7. 2024 - 31. 12. 2027
Evidence number:	APVV-23-0238
Program:	APVV
Project leader:	RNDr. Španková Marianna, PhD
SAS cosolvers:	Ing. Bennár Michal, doc. RNDr. Dobročka Edmund, CSc., Ing. Chromik Štefan, DrSc., Mgr. Mosnáček Jaroslav, DrSc., Mgr. Sojková Michaela, PhD., RNDr. Španková Marianna, PhD, Ing. Talacko Marcel, PhD., Ing. Vanko Gabriel, PhD.
Annotation:	In recent years, sufficient experimental evidence has accumulated that adsorbed organic chiral molecules affectthe superconducting properties of YBa2Cu3O7-x (YBCO) films. In some cases, an increase in their critical temperature Tc can be observed. On the other hand, it has been shown that in the case of ferromagnetic layers (e.g., cobalt), the application of chiral molecules can lead to a change in magnetization without the use of an electric current. An important role here is played by spin. Spin introduces an additional degree of freedom into the system, allowing devices, for example, to reduce electrical consumption or increase their computational capacity. Spintronic devices have become an attraction in electronics; however, problems associated with controlling spin remain a significant challenge. A unique way of manipulating spin is through the effect known as chirality-induced spin selectivity (CISS), which results from the specific structure of organic chiral molecules. The project focuses on the preparation and characterization of simple heterostructures and their interaction with chiral polymers deposited on the film surface. Specifically, it deals with the influence of chiral lactic acid on perovskite thin films, where the selected perovskites are high-temperature superconductor YBCO and ferromagnet La1-xSrxMnO3 (LSMO).

ROTOLES - Optimised growth and the transport and optical properties of thin layers of selected topological semimetals
Duration:	1. 7. 2024 - 30. 6. 2027
Evidence number:	APVV-23-0564
Program:	APVV
Project leader:	Dr. rer. nat. Hulman Martin
SAS cosolvers:	doc. RNDr. Dobročka Edmund, CSc., doc. RNDr. Gažová Zuzana, DrSc., Mgr. Hrdá Jana, PhD., Ing. Krajčovičová Timea Ema, doc. RNDr. Moško Martin, DrSc., Ing. Precner Marián, PhD., RNDr. Pribusová Slušná Lenka, PhD., doc. Ing. Skákalová Viera, DrSc., Mgr. Sojková Michaela, PhD., RNDr. Španková Marianna, PhD, doc. Mgr. Ziman Mário, PhD.
Annotation:	One of the fundamental results of quantum mechanics in the 1920s was the derivation of relativistic equations formassive fermions (Dirac), massless fermions (Weyl) and fermions that are themselves antiparticles (Majorana).Since those times, particle physics has been searching for particles representing Weyl and Majorana\'s fermions.However, their search has not yet been successful.In the last twenty years, it has been shown that the band structure of some materials has such uniquecharacteristics that the charge carriers in them can behave according to the dynamics satisfying the Dirac or Weylrelativistic equations. Such materials include compounds from the group of transition metals dichalcogenides,which we will focus on in our project.We will work with very thin layers of selected materials from this group, such as PtSe2, MoTe2 and WTe2. The firststep in the implementation of the project will be the preparation of such layers by chalcogenisation of thin films oftransition metals. Their transport and optical properties will then be thoroughly investigated. Temperaturedependent transport measurements can show us transitions between different structures of the same material. We expect that a metal-insulator transition can be observed when the thickness of such thin films is varied. Some ofthese materials can go into a superconducting state at very low temperatures. We will also try to induce this state inclose proximity, i.e. when the thin layer is in contact with another superconductor.Optical measurements will be correlated with transport measurements. We derive essential frequency-dependentcharacteristics, such as optical conductivity, from the latter. We will look for characteristics theoretically predictedfor Dirac and Weyl fermions in the optical conductivity.

PIRADUNEW - Perspective ionizing radiation detectors for the uncovered neutron energy window
Duration:	1. 7. 2023 - 30. 6. 2027
Evidence number:	APVV-22-0382
Program:	APVV
Project leader:	Mgr. Zaťko Bohumír, PhD
SAS cosolvers:	RNDr. Boháček Pavol, CSc., Ing. Izsák Tibor, PhD., Ing. Kováčová Eva, MSc. Parsa Saeb Saviz, Mgr. Sekáčová Mária, Ing. Varga Marian, PhD.
Annotation:	The subject of the presented project is the optimization and preparation of semiconductor detection structuresbased on 4H-SiC and polycrystalline diamond suitable for neutron detection. As part of the project, single detectorswill be prepared and investigated, especially for neutron energies from 100 keV to several MeVs. There arecurrently few sensitive detectors in this area of neutron energy. The advantages of SiC and polycrystalline diamond are the high radiation and temperature resistance of structures. The high spectrometric capability of SiC detectors is also important, especially when detecting neutrons with energies below 1 MeV. Polycrystalline diamond is m ore affordable than SiC, and our first preliminary results show its promising detection properties, especially when detecting ionizing particles. Another advantage of both types of semiconductors is the low sensitivity to gamma radiation, which is almost always present in the event that neutrons are formed during a nuclear reaction. This gamma ray enhances the background and impairs the sensitivity of the detectors currently in use. Pixel sensors for the Timepix/Medipix reading chip will also be developed and investigated. Prototypes of the radiation camera will be tested and calibrated using a monoenergetic neutron source.

Thermal stability of superconducting coils and filamentized REBCO tapes
Duration:	1. 1. 2024 - 31. 12. 2026
Evidence number:	2/0098/24
Program:	VEGA
Project leader:	Mgr. Seiler Eugen, PhD
SAS cosolvers:	MSc. Dadhich Anang, PhD., Ing. Frolek Lubomír, doc. Ing. Gömöry Fedor, DrSc., MSc. Hussain Arif, PhD., Ing. Kucharovič Martin, PhD., Ing. Kujovič Tomáš, PhD., Ing. Mošať Marek, PhD., Mgr. Pardo Enric, PhD., Ing. Ries Rastislav, PhD., Mgr. Soloviov Mykola, PhD., Ing. Šouc Ján, CSc., Štefánik Stanislav, Tančár Juraj
Annotation:	The project investigates electro-thermal stability of filamentized superconducting REBCO tapes andsuperconducting coils at transporting the electric current. The goal is to develop theoretical models and numericalmethods allowing to determine the maximum transport current that can flow through a superconducting coil orthrough a filamentized tape without the risk of a rapid local heating. Characterization of tapes and coils will bebased on the standard measurement methods as well as on specially designed experiments, which will allow toincorporate the real parameters of available superconducting tapes into the models. In order to experimentallyverify the theoretical models of thermal stability of superconducting coils, specific model coils will be built,equipped with multiple voltage and temperature sensors for detailed monitoring of the electro-thermal stability.The outcomes of the theoretical models will subsequently be applied at manufacturing bigger coils, relevant forrealistic electric devices.

Graphene encapsulated two-dimensional magnetic materials as a platform for spintronics devices
Duration:	1. 1. 2025 - 31. 8. 2026
Evidence number:	09I05-03-V03-00071
Program:	Plán obnovy EÚ
Project leader:	Ing. Precner Marián, PhD.
Annotation:	The field of materials science is currently experiencing rapid growth. This project focuses on the investigation and development of two-dimensional van der Waals heterostructures, which represent physical systems playing a key role in the advancement of future technologies aimed at digital and green energy transformation, in line with the general interests of our society. Our research targets new systems—two-dimensional magnetic metal iodides encapsulated in graphene—prepared using a one-step synthetic method (SinGO). The project brings together research teams with complementary expertise and infrastructure to maximize synergy, enabling the realization of fundamental theoretical and experimental research, technological improvement of sample preparation, and demonstration of the concept showing that charge-to-spin conversion can be achieved through proximity-induced effects in the fabricated prototype devices.

Enhanced safe materials for Li-ion batteries
Duration:	1. 1. 2025 - 31. 8. 2026
Evidence number:	09I04-03-V02-00028
Program:	Plán obnovy EÚ
Project leader:	Ing. Hudec Boris, PhD.
Annotation:	The development, production, and use of batteries are vital for the EU’s transition to a climate-neutral economy, as batteries play a key role in achieving zero-emission transportation, energy, and industry. Third-generation lithium-ion batteries are currently the most widespread type used in electric vehicles. The goal of the project is to develop materials that enhance the operational safety of lithium-ion batteries in a passive way. Each component of a Li-ion battery can contribute to improving its operational safety. Within the project, we aim to develop an anode and a cathode with enhanced performance and flame-retardant properties. Furthermore, a new type of separator will be designed to prevent mechanical and thermal damage during operation. Finally, the electrochemical properties and performance of a standard battery and a battery composed of safety-enhanced materials will be evaluated under conditions close to thermal runaway.

Superconducting components for hydrogen-electric aircraft
Duration:	1. 3. 2024 - 31. 8. 2026
Evidence number:	09I04-03-V02-00039
Program:	Plán obnovy EÚ
Project leader:	Mgr. Pardo Enric, PhD.
Annotation:	Air transport is a growing source of green-house gas emissions (CO2, NOx, and water steam at high altitude). In addition, fossil fuel prices will grow. Then, the future of commercial aviation comes through emission-less aircraft. Hydrogen-electric aircraft are very promising, where electricity comes from either fuel cells or burned in turbine generators. Electric power trains enable distributed propulsion that highly improves aircraft aerodynamics, which can save up to 70 % of energy. Since liquid hydrogen boils at 20 K (-253o C), it allows to use superconducting electric propulsion motors and power-transfer cables, which are much lighter than conventional ones. This project is intended to develop superconducting components of the power train: electric motors, power cables, and superconducting materials that they are composed. The results of this project will also be useful for other decarbonization areas like fusion energy, wind turbines, and efficient power-transmission lines.

Development of Advanced Nano-structured Materials for Electrocatalysis using an Eco-friendly Deep Eutectic Solvents: A Sustainable Approach to Decarbonisation
Duration:	1. 1. 2025 - 31. 8. 2026
Evidence number:	09I04-03-V02-00006
Program:	Plán obnovy EÚ
Project leader:	Ing. Šoltýs Ján, PhD
Annotation:	The project “Development of Advanced Nanostructured Materials for Electrocatalysis Using Green Deep Eutectic Solvents: A Sustainable Approach to Decarbonization” addresses the urgent global challenge of decarbonization by developing highly efficient electrocatalysts for the production of “green” hydrogen. This innovative and comprehensive research initiative goes beyond the current state of the art in several key directions. By employing environmentally friendly deep eutectic solvents and advanced catalyst supports such as metallic and carbon foams, the project focuses on the research, development, optimization, and characterization of new electrocatalysts designed for efficient hydrogen evolution in alkaline aqueous solutions. These catalysts, consisting of nanostructured alloy coatings based on Ni, Co, Mo, and Fe, and composites containing S and P coated with noble metal nanoparticles, are engineered to enhance electrocatalytic activity and stability. The uniqueness of the project lies in its profound theoretical scope, which not only investigates electrolytic and electroless deposition of catalysts but also provides an in-depth understanding of the relationship between composition, morphology, and catalytic performance. The goal of the project is to develop comprehensive theories that enable the effective design of multifunctional catalysts that synergistically combine the advantages of various active sites, thereby pushing the boundaries of catalysis research. Furthermore, the project will evaluate the applicability of these new materials for potential industrial applications, taking into account factors such as cost-effectiveness, energy efficiency, and feasibility.By emphasizing the production of “green” hydrogen using renewable energy sources, the project supports the global transition toward cleaner energy solutions, contributes to carbon emission reduction, and addresses sustainability challenges. This forward-looking approach is based on interdisciplinary collaboration and interregional partnerships, laying the foundation for future EU-funded projects such as those supported by the European Research Council (ERC) and Horizon Europe.The proposed project represents a significant step forward in the field of electrocatalysis, offering a holistic approach to addressing the challenges of catalysis and hydrogen production. The innovative materials, novel methodologies, sustainable practices, and theoretical foundations developed through this project will serve as a transformative force on the path toward a cleaner and more sustainable energy future.

InN: Breaking the Limits of Solid-State Electronics
Duration:	1. 11. 2023 - 30. 6. 2026
Evidence number:	09I01-03-V04 -00019
Program:	Plán obnovy EÚ
Project leader:	Ing. Kuzmík Ján, DrSc.
Annotation:	The InBreak project follows Horizon 2020 project NANOMAT. NANOMAT aims to inaugurate and establish a new domain of "Flexible (Conformal) Power RF Nanoelectronics" through an ambitious innovative heterogeneous technology platform including organic-based electronics and heat sinks, semiconductor monolithic wide band gap microwave integrated circuits (MMICs), radio frequency microelectromechanical actuators (RF MEMS) and acoustic sensors. In the InBreak project, InN as a unique semiconductor material will be grown as strained channel on a tailored N-polarity InAlN buffer layer. Conventional GaN buffer will be replaced by InAlN with an In molar fraction of 0.7-0.9. We expect that this approach, combined with a thin GaN interlayer between the InAlN barrier and the InN channel, will lead to excellent high-density 2-dimensional electron gas (2DEG) confinement in the epi-structures. Completion of the project will enable HEMTs higher working frequencies and the potential of approaching 6G technology in the (sub)THz band.

Memristive sensorics for post-digital electronics
Duration:	1. 9. 2023 - 30. 6. 2026
Evidence number:	09I03-03-V02-00044
Program:	Plán obnovy EÚ
Project leader:	Dehghan Mohammad
Annotation:	In-sensor computing is a new paradigm for 21st century electronics inspired by nature. In present-day electronics, all the noisy, unstructured data output by sensors needs to be digitised first for further processing. This may soon become a showstopper given the exponential rise in the amount of sensing devices and data they produce, both in consumer electronics like self-driving vehicles and in the Industrie 4.0 framework. On the other hand, in bio-inspired systems, the sensing and processing are not separate; instead, the sensing nodes directly form synaptic connections in the hardware neural network, where the external stimuli being sensed directly alter the synaptic weight matrix, allowing simple algorithms encoded in the neural network to process the signals into reasonable output in real-time. Under this thesis, the student will learn and understand how to build such a prototypical smart sensing system from scratch, i.e. by depositing, patterning and stacking ultra-thin (~nm) oxide and metal films into the simple sensor and memristor devices and arranging these building blocks into functional sensing neural network matrices on a chip. The expertise acquired will cover nano-fabrication methods with a focus on atomic layer deposition (ALD), material analyses and electrical characterisation techniques, and an understanding of the hardware neural networks based on emerging devices. The thesis will be a part of a wider project, and the student will become a part of our research team. We are looking for creative and dedicated team players, prior experience in related areas is a plus.

Nanoelsen - Nanostructured thin-film materials characterized by weak binding interactions for electronic and sensoric applications
Duration:	1. 7. 2022 - 30. 6. 2026
Evidence number:	APVV-21-0278
Program:	APVV
Project leader:	RNDr. Gregušová Dagmar, DrSc.
SAS cosolvers:	Ing. Blaho Michal, PhD., RNDr. Gregušová Dagmar, DrSc., RNDr. Haščík Štefan, PhD., Mgr. Hrdá Jana, PhD., Ing. Pohorelec Ondrej, PhD., RNDr. Pribusová Slušná Lenka, PhD., Mgr. Sojková Michaela, PhD., Mgr. Vojteková Tatiana
Annotation:	The proposed project is focused on the basic research of the preparation processes and properties ofsemiconducting sulfides of transition metals such as Mo, W and Ni and selected combinations with their oxides inthe form of mixed sulfides and oxides, as well as the possibilities of their doping with noble metals (Pt, Au) for usein gas sensors as well as in supercapacitors. We also anticipate full utilization of semiconductormicroelectronic and micromechanical techniques and micro / nanotechnologies, which can significantly contributeto qualitatively improved detection properties, low operating power consumption of gas sensors as well asincreased energy efficiency and supercapacitor lifetime.

New semiconductor materials for pixel sensors with applications in digital radiography
Duration:	1. 1. 2024 - 30. 6. 2026
Evidence number:	09I05-03-V02-00073
Program:	Plán obnovy EÚ
Project leader:	Mgr. Zaťko Bohumír, PhD
Annotation:	Digital imaging using X-rays or other types of ionizing radiation (neutrons, electrons, ions …) is increasingly used in various fields of human activity. Digital systems operating in the so-called single photon counting or event counting mode are gaining more and more interest for research and progressive development. The most promising in this field appear to be the Timepix readout chips family developed at CERN. The main objective of the project is to prepare and optimize semiconductor pixel sensors for the TPX4 readout chip. We will use our previous experience in preparing SiC and GaAs based sensors, which have not been used with this chip so far. The advantage of the new TPX4 chip over the previous version is the larger detection area (3.5×), higher maximum speed (8×), better energy resolution and time resolution. The use of these sensors or radiation cameras would be mainly in industry, in defectoscopy, analysis of various materials, in medicine, in space research, etc.

Perspective ionizing radiation detectors for high-energy particles
Duration:	1. 7. 2024 - 30. 6. 2026
Evidence number:	09I03-03-V06-00108
Program:	Plán obnovy EÚ
Project leader:	Mgr. Zaťko Bohumír, PhD
Annotation:	The aim of the project is to procure a research infrastructure that will be used during the implementation of the project APVV-22-0382 and for conducting further independent research and development carried out by the organization.he knowledge gained will be used to develop new ultra-thin, low-friction coatings for various metal substrates based on 2D materials, suitable for use in vacuum environments.

Advanced 2D based hybrid supercapacitor devices
Duration:	1. 3. 2024 - 30. 6. 2026
Evidence number:	09I05-03-V02-00037
Program:	Plán obnovy EÚ
Project leader:	Mgr. Sojková Michaela, PhD.
Annotation:	The project is focused on research and development of advanced 2D-TMD, carbon-based materials and electrode architectures for supercapacitor applications. The aim is to increase the energy density, lifetime, and power performance of supercapacitors as sustainable energy storage alternatives to batteries for key digital electronic and e-mobility applications. Within the project, carbon based materials (2D g-C3N4, biochar), 2D-TMD pseudocapacitive materials (e.g. MoS2), battery type materials (e.g. NiS2, Ni(OH)2) and their composites, binder-free nanostructures/heterostructures will be investigated as perspectives negative and positive electrodes for advanced hybrid supercapacitor devices. Supercapacitors with improved performance will improve sustainability and user value of electronics systems and will trigger new applications and new business opportunities in key digital technologies and mobility in Slovak and European areas.

Lubrication challenge for ultra-thin advanced 2D-TMDC in extreme conditions
Duration:	1. 7. 2024 - 30. 6. 2026
Evidence number:	09I03-03-V04-00709
Program:	Plán obnovy EÚ
Project leader:	Mgr. Kozak Andrii, PhD.
Annotation:	The friction, stiction, adhesion, and wear are significantly influenced not only by the chemical and physical properties of the objects in relative motion but also by their shape, dimensions of the interacted area, and environment. Tightening the moving objects to the nanoscale make surface forces dominate the tribological behaviour, and the appearance of additional energy dissipation mechanisms can be observed, which can be critical for the lifetime and reliability of the devices. In turn, the environment renders multi-varied effects on the sliding interface, promoting the structural superlubricity or opposite extremally high friction caused by atomic interactions. The aim of this project is fabrication of low-friction wear-protected surfaces coating system applicable to advanced applications at the nano- and macroscale. Ultrathin coating of new 2D TMDs (PtSe2, MoSe2) will be formed with the aim to investigate their structure evolution during sliding in ambient air, vacuum environment as well as at elevated temperatures. The friction and wear processes on the surface of 2D materials and their interfaces will be systematically analysed by means of nanoscale and macroscale friction analysis. The gained knowledge will be then used to develop new ultrathin materials as a low-friction coating for different type of metal surfaces.

Smart gas and temperature sensors with neural-network-based low-level in-sensor data processing capability
Duration:	1. 3. 2024 - 30. 6. 2026
Evidence number:	09I05-03-V02-00058
Program:	Plán obnovy EÚ
Project leader:	Ing. Hudec Boris, PhD.
Annotation:	A large number of sensing elements communicating with each other or with central control units is an integral part of the Internet of Things. The associated transmission and processing of an extreme amount of produced data is problematic. One of the solutions is processing of sensory data in close proximity to the sensor (near-sensor computing) or directly in the sensor (in-sensor computing), which radically reduces the requirements for their subsequent transmission and processing. In this project, we focus on the development of resistive gas and temperature sensors implemented into synaptic matrix of a hardware neural network, enabling low-level processing of measured sensory data directly in this network using a hardware algorithm. In the project, we will develop a methodology to calculate this algorithm and to encode it into the sensor matrix. This methodology will be one of the outputs of the project with the potential for wider application in hardware neural networks.

Study of TMD-based 2D heterostructures (TO-DO)
Duration:	1. 7. 2024 - 30. 6. 2026
Evidence number:	SK-AT-23-0021
Program:	APVV
Project leader:	Mgr. Sojková Michaela, PhD.

Transit2D - Transistors based on 2D Metal Chalcogenides Grown via Thermally Assisted Conversion
Duration:	1. 7. 2022 - 30. 6. 2026
Evidence number:	APVV-21-0231
Program:	APVV
Project leader:	Ing. Ťapajna Milan, PhD.
SAS cosolvers:	Mgr. Egyenes Fridrich, PhD., Ing. Eliáš Peter, Ing. Fedor Ján, PhD, Mgr. Feilhauer Juraj, PhD., RNDr. Gregušová Dagmar, DrSc., Ing. Gucmann Filip, PhD., Mgr. Hrdá Jana, PhD., Ing. Hrubišák Fedor, Ing. Hudec Boris, PhD., Dr. rer. nat. Hulman Martin, RNDr. Hušeková Kristína, Mgr. Hutár Peter, PhD., MSc. Keshtar Javad, Mgr. Laurenčíková Agáta, PhD., Ing. Pohorelec Ondrej, PhD., RNDr. Pribusová Slušná Lenka, PhD., Mgr. Sojková Michaela, PhD., Ing. Stoklas Roman, PhD., Ing. Ťapajna Milan, PhD., Mgr. Vojteková Tatiana
Annotation:	2D materials can form one-atom-thick sheets with extraordinary properties. One of the most promising classes of2D materials is the transition metal dichalcogenides (TMDs). The transition from an indirect to a direct bandgap,when the bulk materials is thinned down to a monolayer, results in unique electrical and optical properties of 2DTMDs. Post-transition metal chalcogenides (PTMCs) represents another interesting group of 2D materials. Thesematerials have wide band gap and, depending on the structure of the material, show anisotropic electrical andoptical properties. The aim of this project is the fabrication of field-effect transistors with metal-oxide-semiconductorgate (MOSFETs) based on selected TMDs and PTMCs compounds and detail analysis of their transport properties.We will focus on large-area few-layer PtSe2 and GaS/GaSe films grown by thermal assisted conversion, i.e.sulfurization and selenization. Based on the existing experiences, structural, chemical and electrical properties ofhorizontally-aligned PtSe2 films prepared by selenization will be optimized, targeting mobilities similar to thoseprepared by mechanical exfoliation. Then, MOSFET technology using both, top-gate as well as bottom-gateapproach will be developed and optimized. Atomic layer deposition and metal-oxide chemical vapor deposition(MOCVD) will be employed for gate oxide growth. GaS/GaSe few-layer films will be prepared by chalcogenization

Large-scale production and characterization of 2D materials
Duration:	1. 9. 2023 - 30. 6. 2026
Evidence number:	09I03-03-V02-00044
Program:	Plán obnovy EÚ
Project leader:	Mgr.Phil. Ahmad Faizan

Research of fabrication technology for low-cost oxide-based semiconductorelectronic devices for IoT and sensor applications
Duration:	1. 1. 2024 - 30. 6. 2026
Evidence number:	09I05-03-V02-00030
Program:	Plán obnovy EÚ
Project leader:	Ing. Ťapajna Milan, PhD.
Annotation:	Inkjet printing of sol-gel material inks and aerosol chemical vapor deposition are low-cost techniques for depositing thin oxide-based semiconductor layers as well as for fabricating electronic components. They offer several advantages over standard methods, including simplicity, low production costs, adaptability, and the ability to deposit layers at low temperatures and without the need for vacuum conditions. These techniques have the potential to revolutionize the fabrication of oxide semiconductor devices and enable their application across a wide range of fields. The proposed project focuses on researching these advanced deposition techniques and culminates in concept demonstrators of oxide-based semiconductor components. Low-cost deposition methods can be optimized to be more energy-efficient and environmentally friendly, contributing to more sustainable semiconductor manufacturing. As costs continue to decrease, technologies that were previously expensive may become more accessible to marginalized or developing regions.

SUPENKA - Superconducting energy cables
Duration:	1. 4. 2024 - 31. 3. 2026
Evidence number:	09I01-03-V04 -00020
Program:	Plán obnovy EÚ
Project leader:	doc. Ing. Gömöry Fedor, DrSc.
Annotation:	The SUPENKA project follows up the European SCARLET project, the aim of which is to develop a superconducting cable for direct current at medium voltage level of 25-50 kV, which results in the removal of the converter platform (around 10,000 tons of material). Such a solution can be advantageously used, for example, in transmission from a wind turbine farm, where direct current can be directly obtained in the turbine structure at the medium voltage level (25 to 100 kV).The proposed SUPENKA project aims to develop in more detail some aspects of the problem solved in the SCARLET project. In the scientific field, there are two main goals: • C1: Development of a methodology for including the inhomogeneity of superconducting properties in the analysis of the stability of current transmission by a superconducting cable • C2: Verification of the possibilities of cooling superconducting cables with non-traditional cooling media. The basic verification of the methodology on short samples has already taken place, therefore the starting level of the SUPENKA project is in the range of TRL 3-4, and the intention is to reach the level of TRL 5.The SUPENKA project will contribute to the fulfillment of the ambitious climate goals of the EC work program "Sustainable, secure and competitive energy supply" aimed at transforming the energy system and shifting energy supply towards climate neutrality within two areas of influence: • Leading position of European industry in key and new technologies for benefit of people • Affordable and clean energy

SPEARhydro - Harnessing the energy of rivers for everyone
Duration:	1. 4. 2025 - 31. 3. 2026
Evidence number:	09I04-03-V03-00001
Program:	Plán obnovy EÚ
Project leader:	Mgr. Soloviov Mykola, PhD.