Publications

Gregušová, Dagmar

Select year reporting publications:

Publications in 2024:
  • GUCMANN, Filip – MENG, Baozhong – CHVÁLA, A. – KÚDELA, Róbert – YUAN, C. – ŤAPAJNA, Milan – FLOROVIČ, M. – EGYENES, Fridrich – ELIÁŠ, Peter – HRUBIŠÁK, Fedor – KOVÁČ, Jaroslav Jr. – FEDOR, Ján – GREGUŠOVÁ, Dagmar**. Improved thermal performance of InGaAs/GaAs nanomembrane HEMTs transferred onto various substrates by epitaxial lift-off. In ACS Applied Electronic Materials, 2024, vol. 6, p. 5651–5660. (2023: 4.3 – IF, Q1 – JCR, 1.058 – SJR, Q1 – SJR, karentované – CCC). (2024 – Current Contents, WOS). ISSN 2637-6113. Dostupné na: https://doi.org/10.1021/acsaelm.4c00659 Typ: ADCA
  • GUCMANN, Filip** – HUŠEKOVÁ, Kristína – ROSOVÁ, Alica – DOBROČKA, Edmund – EGYENES, Fridrich – HRUBIŠÁK, Fedor – KESHTKAR, Javad – CHOUHAN, Hemendra – KRETTOVÁ, Miriam – ELIÁŠ, Peter – NÁDAŽDY, Peter – GREGUŠOVÁ, Dagmar – POHORELEC, Ondrej – KOZAK, Andrii – ŤAPAJNA, Milan. Gallium oxide for applications in electronics and optoelectronics. In 12th International Conference on Advances in Electronic and Photonic Technologies – ADEPT 2024 : Proceedings of ADEPT. Editors: M. Feiler, M. Ziman, S. Kováčová, J. Kováč, jr. – Zilina : University of Zilina in EDIS-Publishing Centre of UZ, 2024, s. 13-16. ISBN 978-80-554-2109-4. (APVV 20-0220. VEGA 2/0100/21. International Conference on Advances in Electronic and Photonic Technologies (ADEPT 2024)) Typ: AFD
  • KUZMÍK, Ján** – STOKLAS, Roman – HASENÖHRL, Stanislav – DOBROČKA, Edmund – KUČERA, Michal – ELIÁŠ, Peter – GUCMANN, Filip – GREGUŠOVÁ, Dagmar – HAŠČÍK, Štefan – KALETA, A. – CHAUVAT, M.-P. – KRET, S. – RUTERANA, P. InN/InAlN heterostructures for new generation of fast electronics. In Journal of Applied Physics, 2024, vol. 135, no. 245701. (2023: 2.7 – IF, Q2 – JCR, 0.649 – SJR, Q2 – SJR). ISSN 0021-8979. Dostupné na: https://doi.org/10.1063/5.0215108 (VEGA 2/0068/21. APVV 21-0008) Typ: ADCA
  • MAŤÚŠ, Marek** – STUCHLÍKOVÁ, Ľ. – GREGUŠOVÁ, Dagmar – MORALES, Manuel B. – WEIS, M. – MAREK, J. – RUTERANA, P. Investigation of emission processes in InGaN/GaN quantum well structure. In 12th International Conference on Advances in Electronic and Photonic Technologies – ADEPT 2024 : Proceedings of ADEPT. Editors: M. Feiler, M. Ziman, S. Kováčová, J. Kováč, jr. – Zilina : University of Zilina in EDIS-Publishing Centre of UZ, 2024, s. 89-92. ISBN 978-80-554-2109-4. (VEGA 2/0068/21. International Conference on Advances in Electronic and Photonic Technologies (ADEPT 2024)) Typ: AFD
  • ŠAGÁTOVÁ, A.** – KOVÁČOVÁ, Eva – BENČUROVÁ, Anna – KONEČNÍKOVÁ, Anna – GREGUŠOVÁ, Dagmar – NEČAS, V. – ZAŤKO, Bohumír. The bias effect on alpha spectrometry of very thin semi-insulating GaAs detectors. In AIP Conference Proceedings. – AIP, 2024, vol. 3251, no. 080010. (2023: 0.152 – SJR). ISBN 978-0-7354-1697-0. ISSN 0094-243X. Dostupné na: https://doi.org/10.1063/5.0235495 (APVV 22-0382. APVV 18-0273. APCOM 2024 : International Conference on Applied Physics of Condensed Matter) Typ: ADMB