Publications

Dobročka, Edmund

• KUZMÍK, Ján** – BLAHO, Michal – GREGUŠOVÁ, Dagmar – ELIÁŠ, Peter – POHORELEC, Ondrej – HASENÖHRL, Stanislav – HAŠČÍK, Štefan – GUCMANN, Filip – ZÁPRAŽNÝ, Zdenko – DOBROČKA, Edmund – KYAMBAKI, M. – KONSTANTINIDIS, G. Growth and performance of n++ GaN cap layer for HEMTs applications. In Materials science in semiconductor processing, 2025, vol. 185, no. 108959. ISSN 1369-8001. Dostupné na: https://doi.org/10.1016/j.mssp.2024.108959 (VEGA 2/0005/22. Horizont Európa-101091433. VEGA 2/0068/21) Typ: ADCA
• ROSOVÁ, Alica – ČAPLOVIČOVÁ, M. – RUTERANA, P. – DOBROČKA, Edmund – ELIÁŠ, Peter – GUCMANN, Filip – HASENÖHRL, Stanislav – STOKLAS, Roman – KUZMÍK, Ján. Influence of InAlN layer Mg doping on the quality of InN/In0.61Al0.39N heterostructure deposited by MOCVD. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. – IEEE, 2024, p. 30-33. ISBN 979-8-3315-4060-9. ISSN 2474-9737. (VEGA 2/0068/21. APVV 21-0008) Typ:
• STOKLAS, Roman – HASENÖHRL, Stanislav – GREGUŠOVÁ, Dagmar – DOBROČKA, Edmund – GUCMANN, Filip – ELIÁŠ, Peter – ROSOVÁ, Alica – MIČUŠÍK, Matej – CHROBÁK, Š. – KUZMÍK, Ján. Electron mobility analysis of InN/In0.61Al0.39N heterostructure after HCl treatment. In ASDAM 2024 : Conference Proceedings The 15th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, October 20-23, 2024. Eds. T. Izsák, G. Vanko. – IEEE, 2024, p. 50-53. ISBN 979-8-3315-4060-9. ISSN 2474-9737. (VEGA 2/0068/21. APVV 21-0008) Typ: