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| CERBERUS – Farebné centrá v diamante – korelácia medzi atómovou štruktúrou a optoelektronickými vlastnosťami | |
| Colour centres in diamond – correlation between atomic structure and opto-electronic properties | |
| Program: | SRDA |
| Project leader: | Ing. Varga Marian, PhD. |
| Annotation: | The subject of the project is in the field of quantum technologies. We will prepare and characterize optically -activedefects in diamonds and correlate the atomic structures with optical properties to be used for quantum applicati ons.For a wide range of dopant concentrations, we will identify the dopant distributions and study the evolution ofdopants’ configuration in-situ, during thermal annealing, using atomic-resolution microscopy and spectroscopytechniques. We will further study the effect of annealing on the opto-electronic properties by measuringphotoluminescence, photocurrent and electroluminescence for the same set of samples. Graphene transparentelectrodes on a diamond surface will be fabricated for phototransport measurements. Diamond-based hybrid p-i-ndiodes will be prepared for electroluminescence measurements. We will focus on finding a correlation between theatomic structure and the opto-electronic properties of differently doped diamonds. This will contribute to theunderstanding of the fundamental relationship needed to efficiently design optically -active elements for diamondquantum devices. |
| Duration: | 1.9.2024 – 31.12.2027 |
| PIRADUNEW – Perspektívne detektory ionizujúceho žiarenia pre nepokryté energetické okno neutrónov | |
| Perspective ionizing radiation detectors for the uncovered neutron energy window | |
| Program: | SRDA |
| Project leader: | Mgr. Zaťko Bohumír, PhD |
| Annotation: | The subject of the presented project is the optimization and preparation of semiconductor detection structuresbased on 4H-SiC and polycrystalline diamond suitable for neutron detection. As part of the project, single detectorswill be prepared and investigated, especially for neutron energies from 100 keV to several MeVs. There arecurrently few sensitive detectors in this area of neutron energy. The advantages of SiC and polycrystalline diamond are the high radiation and temperature resistance of structures. The high spectrometric capability of SiC detectors is also important, especially when detecting neutrons with energies below 1 MeV. Polycrystalline diamond is m ore affordable than SiC, and our first preliminary results show its promising detection properties, especially when detecting ionizing particles. Another advantage of both types of semiconductors is the low sensitivity to gamma radiation, which is almost always present in the event that neutrons are formed during a nuclear reaction. This gamma ray enhances the background and impairs the sensitivity of the detectors currently in use. Pixel sensors for the Timepix/Medipix reading chip will also be developed and investigated. Prototypes of the radiation camera will be tested and calibrated using a monoenergetic neutron source. |
| Duration: | 1.7.2023 – 30.6.2027 |
| Príprava, charakterizácia a dopovanie ultratenkých vrstiev dichalkogenidov prechodných kovov | |
| Fabrication, characterization, and doping of ultra-thin layers of transition metal dichalcogenides | |
| Program: | VEGA |
| Project leader: | Mgr. Sojková Michaela, PhD. |
| Annotation: | Thanks to the unusual physical properties, 2D materials have been intensively studied for several years. Aninteresting group of this class of materials is transition metal dichalcogenides TMD. They have a hexagonalstructure with the individual layers bonded to each other only by weak Van der Waals bonds. This causessignificantly anisotropic properties and has a significant effect on their electronic structure. Some of them showphysically interesting correlated states (superconductivity, charge density waves). The primary goal of this projectis to prepare and study the properties of thin layers of 2 different TMD – MoS2 and PtSe2, and to study theinfluence of doping with Li and Na cations on the electrical and structural properties of these layers. Thesecondary goal is to optimize growth and doping conditions to improve the parameters of thin films, such aselectrical conductivity and charge carrier mobility which will enable the preparation of functional electroniccomponents – transistors. |
| Duration: | 1.1.2021 – 31.12.2024 |
| Heteroštruktúry TMD/diamant: Príprava, charakterizácia a aplikácia | |
| TMD/diamond heterostructures: Fabrication, characterization and applications | |
| Program: | MoRePro |
| Project leader: | Ing. Varga Marian, PhD. |
| Duration: | 1.8.2020 – 31.7.2024 |