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| Kritické aspekty rastu polovodičových štruktúr pre novú generáciu III-N súčiastok | |
| Critical aspects of the growth for a new generation of III-N devices | |
| Program: | VEGA |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Annotation: | Gallium Nitride (GaN) compounds are investigated for a new generation of high-frequency transistors, powerelectronics and post CMOS logic circuits. Flexibility in this area is given by a miscibility of In and Al with GaN,providing a wide spectra of semiconductors with a possibility of setting an energy band-gap from 0.65 eV to 6.2eV, with countless combinations of heterostructures. Basis of our project is given by study and mastering of thegrowth of unique material concepts using a metal-organic chemical-vapour deposition (MOCVD) technique. Weaim to investigate: i/ transistors with N-polar InN channel, ii/ MOS contacts on N-polar heterostructures, iii/transistors with a hole conduction, as well as iv/ vertical structures on GaN substrate. Part of the project will berepresented by characterisation activities, like investigation of the electron transport properties in N-polar InN, in MOS structures, study on the 2-dimensional hole gas as well as transient effect in C-doped vertical transistors. |
| Duration: | 1.1.2022 – 31.12.2025 |
| Supravodivé spoje pre MgB2 vinutia v perzistentnom móde | |
| Superconducting joints of MgB2 wires for windings in persistent mode | |
| Program: | VEGA |
| Project leader: | Ing. Kováč Pavol, DrSc. |
| Annotation: | The idea of this project is to make and optimize superconducting joints between the composite MgB2 wiresmanufactured by powder-in-tube method „PIT“ and by the infiltration or diffusion of magnesium into boronprocess „IMD“ and use it for winding working in „persistent mode“. It will be done dominantly for superconductingjoints of winding made by „wind and react“ technique, but joints for winding with already reacted MgB2 wiresmade by „react and wind“ process will be developed as well. The properties of manufactured superconductingMgB2 joints of different geometry and architecture will be subjected to mechanical and thermal treatments, which would reach the joint current around 50% of critical current measured for the reference MgB2 wire at external field 5 T. |
| Duration: | 1.1.2022 – 31.12.2025 |
| Ultratenké homogénne povrchové vrstvy na štruktúrach komplexnej morfológie pre vylepšenie výkonu batérii využitím depozície po atómových vrstvách | |
| Ultra-thin conformal surface coatings of complex-morphology structures for improving battery performance using atomic layer deposition | |
| Program: | VEGA |
| Project leader: | Ing. Hudec Boris, PhD. |
| Annotation: | Project is focused on the development and optimization of method of 3D deposition of conformal ultra-thincoatings using ALD (atomic layer deposition) on structures of complex morphology, such as micro-porous layersand powders. The method will subsequently be applied in preparation of new generation Li-based batteries, bypassivation and modification of micro-porous surfaces of cathode layers. Effect of ultra-thin ALD coatingsconformality at the nano-scale will be systematically evaluated by correlation of electron microscopy analyseswith electrochemical measurements of prepared batteries. Next step will be the modification of surfaces ofdiscrete metal and ceramic micro-particles and powders with the aim of their subsequent application in fabrication of novel ceramic and metal materials and also new materials for experimental battery electrodes. |
| Duration: | 1.1.2022 – 31.12.2025 |
| Moderné elektronické súčiastky na báze ultraširokopásmového polovodiča Ga2O3 pre budúce vysokonapäťové aplikácie | |
| Modern electronic devices based on ultrawide bandgap semiconducting Ga2O3 for future high-voltage applications | |
| Program: | SRDA |
| Project leader: | Ing. Gucmann Filip, PhD. |
| Annotation: | Wide bandgap (WBG) semiconductor devices represent one of the key technologies in development of high power and high frequency systems for electric power conversion and telecommunications owing to their fundamental benefit of higher breakdown electric fields, in some cases increased electron mobility, and possibility to form heterostructures and 2D electron gas. GaN and SiC, two typical WBG examples also benefit from moderate values of thermal conductivity allowing for more efficient sinking of generated waste heat, lower channel temperatures, and enhanced device reliability. New emerging semiconductor materials with even higher bandgap energies (Eg>3.4eV) referred to as ultrawide bandgap materials allow for further improvements in high power and high voltage handling solid-state electronic devices. Currently, semiconducting gallium oxide (Ga2O3) is under extensive study and expected to provide base material for rectifying Schottky -gate diodes and field-effect transistors for applications operating in kV range thanks to its good scalability, relatively simple synthesis, availability of native melt-grown substrates, and wide range of achievable n-type doping levels. The main aim of the proposed project constitutes material research and development of technology for epitaxial growth of epitaxial α -,β-, and ε-Ga2O3 layers and for processing of basic unipolar and bipolar electronic devices based on prepared Ga2O3 layers for future high voltage/power applications. Ga2O3 layers will be grown using liquid injection metalorganic chemical vapour deposition on sapphire, and higher thermal conductivity SiC substrates. We also aim to prepare Schottky diodes, FETs, and all-oxide Ga2O3 PN diodes using naturally p-type oxides (e.g. NiO, In2O3, CuO2). Comprehensive structural, electrical, optical, and thermal study of prepared epitaxial layers and devices will be conducted and numerous original, high-impact results are expected to be obtained. |
| Duration: | 1.7.2021 – 30.6.2025 |
| PEGANEL – p-GaN elektronika pre úsporu energie a post-CMOS obvody | |
| p-GaN electronics for energy savings and beyond-CMOS circuits | |
| Program: | SRDA |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Annotation: | III-N semiconductors are probably the most versatile and promising semiconductor family, consisted of artificialcompounds made of GaN, AlN and InN. In the project proposal we describe new technological concepts withsufficient freedom to solve main problems of the III-N post-beyond CMOS age: in transistors co-existence of theparasitic n-channel along with the p-channel, as well as low hole gas density and mobility. Similarly, we aim todemonstrate scalable threshold voltage in the enhancement-mode p-doped power transistors, which are needed bythe industry for efficient, energy-saving convertors. In these aspects, our laboratories already showed verypromising results proving the competence to reach described targets. If successfully implemented, results of ourproposed project would represent a significant step forward not only from the world-wide point of view but is also infull agreement with the RIS3 SK (perspective areas of specialization of the Slovak economy), particularly in thefield of semiconductors for electric cars of automotive industry, as well as in information and communicationsciences. |
| Duration: | 1.7.2022 – 30.6.2025 |