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| AGAMI_EURIGAMI – Európska inovatívna pokročilá GaN mikrovlnná integrácia | |
| European Innovative GaN Advanced Microwave Integration | |
| Program: | EDF |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Project webpage: | https://ec.europa.eu/info/funding-tenders/opportunities/portal/screen/opportunities/projects-details/44181033/101102983/EDF |
| Duration: | 15.12.2022 – 14.12.2026 |
| NANOMAT – Heterogenná materiálová a technologická platforma pre novú doménu výkonovej nanoelektroniky | |
| Heterogeneous Material and Technological Platform for a New Domain of Power Nanoelectronics | |
| Program: | Horizon Europe |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Project webpage: | https://doi.org/10.3030/101091433 |
| Duration: | 1.12.2022 – 30.11.2025 |
| Európska sieť pre inovatívnu a pokročilú epitaxiu | |
| European Network for Innovative and Advanced Epitaxy | |
| Program: | COST |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Project webpage: | https://www.cost.eu/actions/CA20116/#tabs+Name:Description |
| Duration: | 1.11.2021 – 30.10.2025 |
| SAFEMOST – Vysokobezpečný GaN MOS spínací tranzistor | |
| Highly Safe GaN Metal-Oxide-Semiconductor Transistor Switch | |
| Program: | International Visegrad Fund (IVF) |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Project webpage: | http://www.safemost.sav.sk/ |
| Duration: | 1.10.2015 – 30.3.2019 |
| HiPoSwitch – Normálne zatvorené spínacie tranzistory na báze GaN pre efektívne prevodníky výkonu | |
| GaN-based normally-off high power switching transistor for efficient power converters | |
| Program: | FP7 |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Project webpage: | http://www.hiposwitch.eu/ |
| Duration: | 1.9.2011 – 30.8.2014 |
| Technológia a vlastnosti MOS HFET tranzistorov na báze GaN s dielektrikami s vysokou konštantou | |
| Technology and properties of GaN-based MOS HFET transistors with high-k dielectric | |
| Program: | Inter-governmental agreement |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Annotation: | no description |
| Duration: | 1.1.2005 – 31.12.2006 |
National
| InN: prielom v elektronike tuhej fázy | |
| InN: Breaking the Limits of Solid-State Electronics | |
| Program: | Plán obnovy EÚ |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Annotation: | The InBreak project follows Horizon 2020 project NANOMAT. NANOMAT aims to inaugurate and establish a new domain of "Flexible (Conformal) Power RF Nanoelectronics" through an ambitious innovative heterogeneous technology platform including organic-based electronics and heat sinks, semiconductor monolithic wide band gap microwave integrated circuits (MMICs), radio frequency microelectromechanical actuators (RF MEMS) and acoustic sensors. In the InBreak project, InN as a unique semiconductor material will be grown as strained channel on a tailored N-polarity InAlN buffer layer. Conventional GaN buffer will be replaced by InAlN with an In molar fraction of 0.7-0.9. We expect that this approach, combined with a thin GaN interlayer between the InAlN barrier and the InN channel, will lead to excellent high-density 2-dimensional electron gas (2DEG) confinement in the epi-structures. Completion of the project will enable HEMTs higher working frequencies and the potential of approaching 6G technology in the (sub)THz band. |
| Duration: | 1.11.2023 – 30.6.2026 |
| Kritické aspekty rastu polovodičových štruktúr pre novú generáciu III-N súčiastok | |
| Critical aspects of the growth for a new generation of III-N devices | |
| Program: | VEGA |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Annotation: | Gallium Nitride (GaN) compounds are investigated for a new generation of high-frequency transistors, powerelectronics and post CMOS logic circuits. Flexibility in this area is given by a miscibility of In and Al with GaN,providing a wide spectra of semiconductors with a possibility of setting an energy band-gap from 0.65 eV to 6.2eV, with countless combinations of heterostructures. Basis of our project is given by study and mastering of thegrowth of unique material concepts using a metal-organic chemical-vapour deposition (MOCVD) technique. Weaim to investigate: i/ transistors with N-polar InN channel, ii/ MOS contacts on N-polar heterostructures, iii/transistors with a hole conduction, as well as iv/ vertical structures on GaN substrate. Part of the project will berepresented by characterisation activities, like investigation of the electron transport properties in N-polar InN, in MOS structures, study on the 2-dimensional hole gas as well as transient effect in C-doped vertical transistors. |
| Duration: | 1.1.2022 – 31.12.2025 |
| PEGANEL – p-GaN elektronika pre úsporu energie a post-CMOS obvody | |
| p-GaN electronics for energy savings and beyond-CMOS circuits | |
| Program: | SRDA |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Annotation: | III-N semiconductors are probably the most versatile and promising semiconductor family, consisted of artificialcompounds made of GaN, AlN and InN. In the project proposal we describe new technological concepts withsufficient freedom to solve main problems of the III-N post-beyond CMOS age: in transistors co-existence of theparasitic n-channel along with the p-channel, as well as low hole gas density and mobility. Similarly, we aim todemonstrate scalable threshold voltage in the enhancement-mode p-doped power transistors, which are needed bythe industry for efficient, energy-saving convertors. In these aspects, our laboratories already showed verypromising results proving the competence to reach described targets. If successfully implemented, results of ourproposed project would represent a significant step forward not only from the world-wide point of view but is also infull agreement with the RIS3 SK (perspective areas of specialization of the Slovak economy), particularly in thefield of semiconductors for electric cars of automotive industry, as well as in information and communicationsciences. |
| Duration: | 1.7.2022 – 30.6.2025 |
| Vertikálny GaN MOSFET pre výkonové spínacie aplikácie | |
| Vertical GaN MOSFET for power switching applications | |
| Program: | SRDA |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Annotation: | Owing the ever growing demand for the energy volume, energy attainability represents one of the most important issues of today’s society. However, there are great reserves in the energy savings available. According to available analyses, more than 10% of all electricity is ultimately lost in the form of conversion losses. Clearly, even partial improvement in the conversion efficiency can have strong economic impact. As the most of energy is now used for the electronics, corresponding scale of the losses forms at the end-user side, where the electricity is converted into a form suitable for a particular appliance. The main effort towards the conversion efficiency improvements therefore targets the area of power AC/DC and DC/DC converters for consumer and industrial electronics. Significant improvement in the conversion efficiency can be achieved by using GaN based transistors, as they are capable to operate at much higher frequencies with almost three times lower switching losses compared to Si devices.The main goal of the project is the research and development of vertical GaN MOSFET without using p-doping, and gaining the original knowledge on electrical and physical properties of the developed devices. From the quantitative point of view, our proof-of-concept device will target RON<2 mOhm/cm2 and VBD>600 V. An original feature of the proposed concept is utilization of the semi-insulating (SI) GaN as a channel layer (instead of p-type GaN), which blocks the current flow through the transistor at zero gate voltage. To open the transistor channel, positive voltage applied to the gate will be needed to induce down bend-bending in the SI GaN, allowing electron injection from the source to the drift region (along the side walls of SI GaN). This concept therefore represents a unipolar enhancement-mode transistor, while drift region is formed of un-doped GaN with extremely low density of dislocation grown directly on GaN substrate. |
| Duration: | 1.7.2019 – 30.6.2022 |
| Pokročilé III-N súčiastky pre prenos informácie a energie | |
| Advanced III-N devices for energy and information transfer | |
| Program: | VEGA |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Annotation: | Gallium Nitride (GaN) and related compounds commonly referred as III-N have significantly more flexible energy gap, higher breakdown electric field intensity, a large spontaneous polarization, high thermal and radiation resistance, but also the high mobility of electrons. Therefore there is an effort to develop III-N semiconductor devices, mainly HFETs, which have the potential to gradually replace Si, Si/SiGe, GaAs and InP devices in microwave and power applications, switches, switching amplifiers, logic circuits and mixed-signal electronics. Consequently, in this manner we aspire to develop HFETs with InN channel for ultra-fast information transfer, advanced GaN-based transistor switches for energy conversion, technology of GaN-based fast mixed-signal electronics, and GaN-based UV sensors for space applications. |
| Duration: | 1.1.2018 – 31.12.2021 |
| MioGaN – GaN monolitické integrované obvody | |
| GaN Monolithic Integrated Circuits | |
| Program: | SRDA |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Duration: | 1.7.2016 – 30.6.2019 |
| Tranzistory s InN-kanálom pre THz mikrovlny a logiku | |
| Transistors with InN channel for THz microwaves and logic | |
| Program: | SRDA |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Duration: | 1.7.2016 – 30.6.2019 |
| HiPoSwitch – Normálne zatvorené spínacie tranzistory na báze GaN pre efektívne prevodníky výkonu | |
| GaN-based normally-off high power switching transistor for efficient power converters | |
| Program: | SRDA |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Duration: | 1.1.2016 – 31.12.2016 |
| Monolitická integrácia ochudobňovacích a obohacovacích InAlN/GaN HFET | |
| Monolithic integration of depletion- and enhancement-mode InAlN/GaN HFET transistors | |
| Program: | SRDA |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Duration: | 1.7.2012 – 30.6.2015 |
| Heteroštruktúry na báze InN pre vysoko-frekvenčné tranzistory | |
| – | |
| Program: | SRDA |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Duration: | 1.1.2011 – 31.12.2014 |
| GETRATRON – Vývoj novej generácie III-N tranzistorov s vysokou pohybivosťou elektónov | |
| Towards next generation of III-N high-electron-mobility transistors | |
| Program: | SRDA |
| Project leader: | Ing. Kuzmík Ján, DrSc. |
| Duration: | 1.5.2011 – 30.4.2014 |