Projects

RNDr. Dagmar Gregušová, DrSc.

National

Current
  • Nanostructured thin-film materials characterized by weak binding interactions for electronic and sensoric applications
    Program: SRDA
    Duration: 1. 7. 2022 – 30. 6. 2026
  • Transistors based on 2D Metal Chalcogenides Grown via Thermally Assisted Conversion
    Program: SRDA
    Duration: 1. 7. 2022 – 30. 6. 2026
  • Modern electronic devices based on ultrawide bandgap semiconducting Ga2O3 for future high-voltage applications
    Program: SRDA
    Duration: 1. 7. 2021 – 30. 6. 2025
  • Advanced GaAs-based nanomembrane heterostructures for highperformance RF devices
    Program: SRDA
    Duration: 1. 7. 2022 – 30. 6. 2025
  • p-GaN electronics for energy savings and beyond-CMOS circuits
    Program: SRDA
    Duration: 1. 7. 2022 – 30. 6. 2025
Finished
  • Contact engineering for advanced materials and devices
    Program: VEGA
    Duration: 1. 1. 2021 – 31. 12. 2024
  • Fabrication, physics and correlated states in metallic 2D transition metal dichalcogenides
    Program: SRDA
    Duration: 1. 7. 2020 – 30. 6. 2023
  • Surface processing of semiconductors as the way towards new III-As and III-N electronic devices
    Program: VEGA
    Duration: 1. 1. 2017 – 31. 12. 2020
  • Insulated gate technologies for high-performance III-As and III-N transistors
    Program: VEGA
    Duration: 1. 1. 2013 – 31. 12. 2016
  • Metal-oxide-semiconductor structures on III-V semiconductors
    Program: VEGA
    Duration: 1. 1. 2009 – 31. 12. 2012
  • Influence of dielectric passivation on properties of AlGaN/GaN HEMTs
    Program: VEGA
    Duration: 1. 1. 2006 – 1. 12. 2008
Employees