Projects

Ing. Alica Rosová, CSc.

National

Current
  • Vertical GaN Power Devices with Semi-Insulating Channel and Innovative 3D Gate-Source Architecture for Increased-Switching Performance
    Program: SRDA
    Duration: 1. 9. 2026 – 31. 8. 2030
  • Vertical GaN MOS transistors with semi-insulating channel and enhanced off-state breakdown performance
    Program: VEGA
    Duration: 1. 1. 2026 – 31. 12. 2029
  • Novel heterostructures for (sub)THz electronics
    Program: SRDA
    Duration: 1. 9. 2025 – 31. 8. 2029
  • Gallium oxide power transistors for high-voltage operation
    Program: SRDA
    Duration: 1. 9. 2025 – 31. 8. 2029
  • MOCVD heteroepitaxy and defect analysis of Ga2O3 films for advanced deep UV sensing
    Program: SRDA
    Duration: 1. 7. 2026 – 30. 6. 2028
Finished
  • Critical aspects of the growth for a new generation of III-N devices
    Program: VEGA
    Duration: 1. 1. 2022 – 31. 12. 2025
  • Superconducting joints of MgB2 wires for windings in persistent mode
    Program: VEGA
    Duration: 1. 1. 2022 – 31. 12. 2025
  • Ultra-thin conformal surface coatings of complex-morphology structures for improving battery performance using atomic layer deposition
    Program: VEGA
    Duration: 1. 1. 2022 – 31. 12. 2025
  • Modern electronic devices based on ultrawide bandgap semiconducting Ga2O3 for future high-voltage applications
    Program: SRDA
    Duration: 1. 7. 2021 – 30. 6. 2025
  • p-GaN electronics for energy savings and beyond-CMOS circuits
    Program: SRDA
    Duration: 1. 7. 2022 – 30. 6. 2025
Employees