Projects

Ing. Miriam Krettová

National

Current
  • Gallium oxide power transistors for high-voltage operation
    Program: SRDA
    Duration: 1. 9. 2025 – 31. 8. 2029
  • MOCVD heteroepitaxy and defect analysis of Ga2O3 films for advanced deep UV sensing
    Program: SRDA
    Duration: 1. 7. 2026 – 30. 6. 2028
  • Suppression of rotational domains in heteroepitaxial β-Ga2O3 films grown on sapphire by MOCVD
    Program: DoktoGrant
    Duration: 1. 1. 2026 – 31. 12. 2026