doc. Ing. Jozef Novák, DrSc.
International
Finished
- Advanced GaN nano-hetero-structures – preparation and characterizationProgram: Inter-academic agreementDuration: 1. 1. 2017 – 31. 12. 2017
- Energy for a Green SocietyProgram: ENIACDuration: 1. 6. 2011 – 31. 5. 2014
- New power optics for infrared range based on gallium phosphideProgram: EUREKADuration: 1. 3. 2007 – 1. 4. 2010
- Superconducting tapes and semiconductor quantum dots: nanostructures for todays information and energy technologiesProgram: Bilateral - otherDuration: 1. 1. 2008 – 31. 12. 2009
- Advanced nanostructures and materials for applications in informations and energy Technologies. Structural and electrotechnical aspectsProgram: Inter-academic agreementDuration: 1. 1. 2006 – 31. 12. 2007
- Investigation of metal-insulator-semiconductor structures of GAN for high-frequency and high-power devicesProgram: Inter-academic agreementDuration: 1. 1. 2005 – 31. 12. 2006
- Investigation of metal-insulator-semiconductor structures of GAN for high-frequency and high-power devicesProgram: Inter-academic agreementDuration: 1. 1. 2005 – 31. 12. 2006
- New gallium phosphide grown by vertical gradient freeze method for light emitting diodesProgram: FP6Duration: 1. 2. 2002 – 1. 8. 2005
National
Finished
- Photonic Lab-on-a-Chip: investigation and development of plasmonic sensor platform for immediate detection of composites in solutionsProgram: SRDADuration: 1. 7. 2021 – 31. 12. 2024
- Nano-optical probes and sensors integrated on optical fiberProgram: SRDADuration: 1. 8. 2021 – 31. 12. 2024
- Contact engineering for advanced materials and devicesProgram: VEGADuration: 1. 1. 2021 – 31. 12. 2024
- Photonic nanostructures prepared by 3D laser lithography for biosensingProgram: SRDADuration: 1. 7. 2017 – 31. 12. 2020
- Advanced nanostructures prepared by sophisticated MOVPE technologyProgram: VEGADuration: 1. 1. 2017 – 31. 12. 2020
- Universal nanorod platform for interdisciplinary applicationsProgram: SRDADuration: 1. 7. 2015 – 31. 12. 2018
- Photonic structures for integrated optoelectronicsProgram: SRDADuration: 1. 10. 2013 – 31. 12. 2016
- Advanced nanostructures for application in optoelectronic devicesProgram: VEGADuration: 1. 1. 2013 – 31. 12. 2016
- Research and development of advanced semiconductor material and substrates VGF GaP with 100 nm diameter for conversion of CO2 into value addeed chemicalsProgram: EU Structural Funds Research & DevelopmentDuration: 1. 2. 2012 – 30. 11. 2015
- Growth of nanowires for photovoltaic applicationsProgram: SRDADuration: 1. 5. 2011 – 31. 10. 2014
- Advanced semiconductor structures with tailored band-gap structure and surface propertiesProgram: VEGADuration: 1. 1. 2009 – 21. 12. 2012
- MOS HFET transistors based on III-N semiconductors for high temperature applicationsProgram: SRDADuration: 1. 9. 2009 – 30. 8. 2012
- AlN synthesis based on PBN technologyProgram: SRDADuration: 1. 9. 2009 – 30. 9. 2011
- Centre of Excellence in Nano-/Micro-electronic, Optoelectronic and Sensoric TechnologiesProgram: SRDADuration: 1. 7. 2008 – 30. 6. 2011
- Epi-ready substrates VGF GaP (S)Program: SRDADuration: 1. 6. 2008 – 31. 12. 2010
- New power optics for infrared range based on gallium phosphideProgram:Duration: 16. 7. 2009 – 31. 12. 2009
- New power optics for infrared range based on gallium phosphideProgram: SRDADuration: 1. 2. 2007 – 31. 12. 2009
- Research work on formation and properties of pyrolytic boron nitrideProgram: SRDADuration: 1. 1. 2008 – 31. 12. 2009
- Nanodimension and its influence on properties of movpe semiconductor layers and structuresProgram: VEGADuration: 1. 1. 2006 – 1. 12. 2008
- -Program: SRDADuration: 1. 2. 2004 – 31. 12. 2006