Hosting a delegation from Lithuania
On October 28, 2025, the Institute of Electrical Engineering of the Slovak Academy of Sciences (IEE SAS) welcomed a distinguished delegation from Lithuania, led by Ms. Wang Hsueh-Hong, Head...
Si-Doped GaN Cap Layer Enhances Stability and Prevents Current Collapse in HEMTs
Highly Si-doped gallium nitride (n++ GaN) layers play a key role in developing reliable high-electron-mobility transistors (HEMTs) for power and communication...
Continuation of successful cooperation with Taiwan’s ITRI
Representatives of the Taiwan Representative Office in Bratislava (TROB), Mr. David Li Nanyang, together with the director of the Institute of...
Demagnetization of a Magnetic Cloak Using Superconductors and Ferromagnetic Materials
Magnetic shielding is an integral part of many devices in industrial, medical or research sector. The most common shielding method is...
Publication Seminar
Time: October 17, 2025 on 10,00 a.m. Place: ElÚ SAV, v.v.i. (meeting room 101) Program:
