Establishment of reliability laboratory for power modules and joint research of GaN and Ga2O3 power devices
| Duration: | 1. 7. 2023 – 30. 6. 2027 |
| Evidence number: | SK-TW |
| Program: | Trilateral |
| Project leader: | Ing. Ťapajna Milan, PhD. |
| Partner countries: | Taiwan |
The aim of the joint projects between Institute of Electrical Engineering, Slovak Academy of Sciences (IEE SAS), Faculty of Electrical Engineering and Information Technology, Slovak University of Technology in Bratislava (STU FEI) and Industrial Technology Research Institute (ITRI) is to train new experts in the field of design and technology of power modules for electromobility and research in the field of wide and ultrawide bandgap semiconductor technology (GaN, Ga2O3, SiC) for advanced power electronic devices. The strategic focus of the project is to contribute to the development of the entire semiconductor ecosystem in Slovakia in order to improve the added value of domestic companies in the transition of the automotive industry to electromobility.
Under the license agreement, the IEE SAS will build-up a laboratory for reliability analysis of semiconductor power modules, which will be manufactured in the cleanroom of the FEI STU. The Memorandum of Understanding, in turn, defines joint research between IEE SAS and ITRI focused on the development of power electronic devices based on wide-bandgap semiconductors (GaN and Ga2O3).