A mid-term review meeting took place this week as a part of the ongoing strategic collaboration between the Institute of Electrical Engineering of the Slovak Academy of Sciences (IEE SAS), Taiwan’s Industrial Technology Research Institute (ITRI), and the Slovak University of Technology (STU). The partners reviewed the achievements of the past two years and discussed the plans and tasks for the next phase of the project.
One of the outcomes of this collaboration is the development of a new laboratory at IEE SAS dedicated to the reliability analysis of power modules. These modules will be manufactured in the cleanroom facilities of the Faculty of Electrical Engineering and Information Technology STU in Bratislava under a trilateral agreement. The first two phases of this effort—equipping the laboratory with advanced instrumentation and providing specialized training for IEE SAS staff by ITRI experts—have now been successfully completed. The third phase will focus on laboratory operation and on testing the power modules produced at STUBA.
The agreement also includes a joint research project with ITRI aimed at developing power electronic devices based on wide-bandgap semiconductors (GaN and Ga₂O₃). In the research part, we have completed the first phase focused on GaN and we are now moving on to Ga₂O₃ research, where our main objective is to grow high-quality Ga₂O₃ layers in the newly established MOCVD laboratory.
