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Current

Cost-effective Ga2O3-diamond heterojunction photodetectors for solar-blind UV imaging
Duration:	1. 8. 2024 - 30. 7. 2029
Evidence number:	IM-2023-87
Program:	IMPULZ
Project leader:	Ing. Varga Marian, PhD.

2D TMD-based heterostructures for electronic applications
Duration:	1. 1. 2025 - 31. 12. 2028
Evidence number:	2/0075/25
Program:	VEGA
Project leader:	Mgr. Sojková Michaela, PhD.

TECHAPHO - Ternary chalcogenide perovskites for photovoltaics
Duration:	1. 7. 2024 - 30. 6. 2028
Evidence number:	APVV-23-0202
Program:	APVV
Project leader:	Ing. Chromik Štefan, DrSc.
SAS cosolvers:	Ing. Bennár Michal, doc. RNDr. Dobročka Edmund, CSc., RNDr. Španková Marianna, PhD, Ing. Talacko Marcel, PhD.
Annotation:	The goal of the proposed project is the synthesis of ternary chalcogenides with perovskite structure and systematiccharacterization of the relationship between the composition, structure, optical properties, thermal and chemical stability with the potential in the application in photovoltaics, or other optoelectronics. The result will be a set of prepared pure ternary chalcogenides in the form of crystalline powders and thin films with known, as well as newly prepared compositions and a comprehensive characterization of their optical and electronic properties, as well as thermal and chemical stability. Ternary chalcogenides will be prepared also by wet approach at lower temperature up to 350 °C in the form of nanocrystals which will be characterized in terms of their structure and morphology.Proof-of-concept solar cell will be prepared, which has not yet been reported in the literature. The optimalization will be done based on performance measurements.

CERBERUS - Colour centres in diamond – correlation between atomic structure and opto-electronic properties
Duration:	1. 9. 2024 - 31. 12. 2027
Evidence number:	APVV-23-0361
Program:	APVV
Project leader:	Ing. Izsák Tibor, PhD.
SAS cosolvers:	Mgr.Phil. Ahmad Faizan, Ing. Gucmann Filip, PhD., Mgr. Hrdá Jana, PhD., RNDr. Hušeková Kristína, Mgr. Hutár Peter, PhD., MSc. Keshtar Javad, Mgr. Kotrusz Peter, PhD., Mgr. Kozak Andrii, PhD., Ing. Precner Marián, PhD., doc. Ing. Skákalová Viera, DrSc., Mgr. Sojková Michaela, PhD., Ing. Ťapajna Milan, PhD.
Annotation:	The subject of the project is in the field of quantum technologies. We will prepare and characterize optically -activedefects in diamonds and correlate the atomic structures with optical properties to be used for quantum applicati ons.For a wide range of dopant concentrations, we will identify the dopant distributions and study the evolution ofdopants’ configuration in-situ, during thermal annealing, using atomic-resolution microscopy and spectroscopytechniques. We will further study the effect of annealing on the opto-electronic properties by measuringphotoluminescence, photocurrent and electroluminescence for the same set of samples. Graphene transparentelectrodes on a diamond surface will be fabricated for phototransport measurements. Diamond-based hybrid p-i-ndiodes will be prepared for electroluminescence measurements. We will focus on finding a correlation between theatomic structure and the opto-electronic properties of differently doped diamonds. This will contribute to theunderstanding of the fundamental relationship needed to efficiently design optically -active elements for diamondquantum devices.

New hybrid semiconductor structures for ionizing radiation detection
Duration:	1. 1. 2024 - 31. 12. 2027
Evidence number:	2/0063/24
Program:	VEGA
Project leader:	Mgr. Zaťko Bohumír, PhD

PEROVCHIR - Effect of the application of organic molecules on the properties of perovskite thin-film structures
Duration:	1. 7. 2024 - 31. 12. 2027
Evidence number:	APVV-23-0238
Program:	APVV
Project leader:	RNDr. Španková Marianna, PhD
SAS cosolvers:	Ing. Bennár Michal, doc. RNDr. Dobročka Edmund, CSc., Ing. Chromik Štefan, DrSc., Mgr. Mosnáček Jaroslav, DrSc., Mgr. Sojková Michaela, PhD., RNDr. Španková Marianna, PhD, Ing. Talacko Marcel, PhD., Ing. Vanko Gabriel, PhD.
Annotation:	In recent years, sufficient experimental evidence has accumulated that adsorbed organic chiral molecules affectthe superconducting properties of YBa2Cu3O7-x (YBCO) films. In some cases, an increase in their critical temperature Tc can be observed. On the other hand, it has been shown that in the case of ferromagnetic layers (e.g., cobalt), the application of chiral molecules can lead to a change in magnetization without the use of an electric current. An important role here is played by spin. Spin introduces an additional degree of freedom into the system, allowing devices, for example, to reduce electrical consumption or increase their computational capacity. Spintronic devices have become an attraction in electronics; however, problems associated with controlling spin remain a significant challenge. A unique way of manipulating spin is through the effect known as chirality-induced spin selectivity (CISS), which results from the specific structure of organic chiral molecules. The project focuses on the preparation and characterization of simple heterostructures and their interaction with chiral polymers deposited on the film surface. Specifically, it deals with the influence of chiral lactic acid on perovskite thin films, where the selected perovskites are high-temperature superconductor YBCO and ferromagnet La1-xSrxMnO3 (LSMO).

ROTOLES - Optimised growth and the transport and optical properties of thin layers of selected topological semimetals
Duration:	1. 7. 2024 - 30. 6. 2027
Evidence number:	APVV-23-0564
Program:	APVV
Project leader:	Dr. rer. nat. Hulman Martin
SAS cosolvers:	doc. RNDr. Dobročka Edmund, CSc., doc. RNDr. Gažová Zuzana, DrSc., Mgr. Hrdá Jana, PhD., Ing. Krajčovičová Timea Ema, doc. RNDr. Moško Martin, DrSc., Ing. Precner Marián, PhD., RNDr. Pribusová Slušná Lenka, PhD., doc. Ing. Skákalová Viera, DrSc., Mgr. Sojková Michaela, PhD., RNDr. Španková Marianna, PhD, doc. Mgr. Ziman Mário, PhD.
Annotation:	One of the fundamental results of quantum mechanics in the 1920s was the derivation of relativistic equations formassive fermions (Dirac), massless fermions (Weyl) and fermions that are themselves antiparticles (Majorana).Since those times, particle physics has been searching for particles representing Weyl and Majorana\'s fermions.However, their search has not yet been successful.In the last twenty years, it has been shown that the band structure of some materials has such uniquecharacteristics that the charge carriers in them can behave according to the dynamics satisfying the Dirac or Weylrelativistic equations. Such materials include compounds from the group of transition metals dichalcogenides,which we will focus on in our project.We will work with very thin layers of selected materials from this group, such as PtSe2, MoTe2 and WTe2. The firststep in the implementation of the project will be the preparation of such layers by chalcogenisation of thin films oftransition metals. Their transport and optical properties will then be thoroughly investigated. Temperaturedependent transport measurements can show us transitions between different structures of the same material. We expect that a metal-insulator transition can be observed when the thickness of such thin films is varied. Some ofthese materials can go into a superconducting state at very low temperatures. We will also try to induce this state inclose proximity, i.e. when the thin layer is in contact with another superconductor.Optical measurements will be correlated with transport measurements. We derive essential frequency-dependentcharacteristics, such as optical conductivity, from the latter. We will look for characteristics theoretically predictedfor Dirac and Weyl fermions in the optical conductivity.

PIRADUNEW - Perspective ionizing radiation detectors for the uncovered neutron energy window
Duration:	1. 7. 2023 - 30. 6. 2027
Evidence number:	APVV-22-0382
Program:	APVV
Project leader:	Mgr. Zaťko Bohumír, PhD
SAS cosolvers:	RNDr. Boháček Pavol, CSc., Ing. Izsák Tibor, PhD., Ing. Kováčová Eva, MSc. Parsa Saeb Saviz, Mgr. Sekáčová Mária, Ing. Varga Marian, PhD.
Annotation:	The subject of the presented project is the optimization and preparation of semiconductor detection structuresbased on 4H-SiC and polycrystalline diamond suitable for neutron detection. As part of the project, single detectorswill be prepared and investigated, especially for neutron energies from 100 keV to several MeVs. There arecurrently few sensitive detectors in this area of neutron energy. The advantages of SiC and polycrystalline diamond are the high radiation and temperature resistance of structures. The high spectrometric capability of SiC detectors is also important, especially when detecting neutrons with energies below 1 MeV. Polycrystalline diamond is m ore affordable than SiC, and our first preliminary results show its promising detection properties, especially when detecting ionizing particles. Another advantage of both types of semiconductors is the low sensitivity to gamma radiation, which is almost always present in the event that neutrons are formed during a nuclear reaction. This gamma ray enhances the background and impairs the sensitivity of the detectors currently in use. Pixel sensors for the Timepix/Medipix reading chip will also be developed and investigated. Prototypes of the radiation camera will be tested and calibrated using a monoenergetic neutron source.

Thermal stability of superconducting coils and filamentized REBCO tapes
Duration:	1. 1. 2024 - 31. 12. 2026
Evidence number:	2/0098/24
Program:	VEGA
Project leader:	Mgr. Seiler Eugen, PhD
SAS cosolvers:	MSc. Dadhich Anang, PhD., Ing. Frolek Lubomír, doc. Ing. Gömöry Fedor, DrSc., MSc. Hussain Arif, Ing. Kucharovič Martin, PhD., Ing. Kujovič Tomáš, PhD., Ing. Mošať Marek, PhD., Mgr. Pardo Enric, PhD., Ing. Ries Rastislav, PhD., Mgr. Soloviov Mykola, PhD., Ing. Šouc Ján, CSc., Štefánik Stanislav, Tančár Juraj
Annotation:	The project investigates electro-thermal stability of filamentized superconducting REBCO tapes andsuperconducting coils at transporting the electric current. The goal is to develop theoretical models and numericalmethods allowing to determine the maximum transport current that can flow through a superconducting coil orthrough a filamentized tape without the risk of a rapid local heating. Characterization of tapes and coils will bebased on the standard measurement methods as well as on specially designed experiments, which will allow toincorporate the real parameters of available superconducting tapes into the models. In order to experimentallyverify the theoretical models of thermal stability of superconducting coils, specific model coils will be built,equipped with multiple voltage and temperature sensors for detailed monitoring of the electro-thermal stability.The outcomes of the theoretical models will subsequently be applied at manufacturing bigger coils, relevant forrealistic electric devices.

Enhanced safe materials for Li-ion batteries
Duration:	1. 1. 2025 - 31. 8. 2026
Evidence number:	09I05-03-V02-00028
Program:	Plán obnovy EÚ
Project leader:	Ing. Hudec Boris, PhD.

Development of Advanced Nano-structured Materials for Electrocatalysis using an Eco-friendly Deep Eutectic Solvents: A Sustainable Approach to Decarbonisation
Duration:	1. 1. 2025 - 31. 8. 2026
Evidence number:	09I05-03-V02-00006
Program:	Plán obnovy EÚ
Project leader:	Ing. Šoltýs Ján, PhD

InN: Breaking the Limits of Solid-State Electronics
Duration:	1. 11. 2023 - 30. 6. 2026
Evidence number:	09I01-03-V04 -00019
Program:	Plán obnovy EÚ
Project leader:	Ing. Kuzmík Ján, DrSc.
Annotation:	The InBreak project follows Horizon 2020 project NANOMAT. NANOMAT aims to inaugurate and establish a new domain of "Flexible (Conformal) Power RF Nanoelectronics" through an ambitious innovative heterogeneous technology platform including organic-based electronics and heat sinks, semiconductor monolithic wide band gap microwave integrated circuits (MMICs), radio frequency microelectromechanical actuators (RF MEMS) and acoustic sensors. In the InBreak project, InN as a unique semiconductor material will be grown as strained channel on a tailored N-polarity InAlN buffer layer. Conventional GaN buffer will be replaced by InAlN with an In molar fraction of 0.7-0.9. We expect that this approach, combined with a thin GaN interlayer between the InAlN barrier and the InN channel, will lead to excellent high-density 2-dimensional electron gas (2DEG) confinement in the epi-structures. Completion of the project will enable HEMTs higher working frequencies and the potential of approaching 6G technology in the (sub)THz band.

Memristive sensorics for post-digital electronics
Duration:	1. 9. 2023 - 30. 6. 2026
Evidence number:	09I03-03-V02-00044
Program:	Plán obnovy EÚ
Project leader:	Dehghan Mohammad
Annotation:	In-sensor computing is a new paradigm for 21st century electronics inspired by nature. In present-day electronics, all the noisy, unstructured data output by sensors needs to be digitised first for further processing. This may soon become a showstopper given the exponential rise in the amount of sensing devices and data they produce, both in consumer electronics like self-driving vehicles and in the Industrie 4.0 framework. On the other hand, in bio-inspired systems, the sensing and processing are not separate; instead, the sensing nodes directly form synaptic connections in the hardware neural network, where the external stimuli being sensed directly alter the synaptic weight matrix, allowing simple algorithms encoded in the neural network to process the signals into reasonable output in real-time. Under this thesis, the student will learn and understand how to build such a prototypical smart sensing system from scratch, i.e. by depositing, patterning and stacking ultra-thin (~nm) oxide and metal films into the simple sensor and memristor devices and arranging these building blocks into functional sensing neural network matrices on a chip. The expertise acquired will cover nano-fabrication methods with a focus on atomic layer deposition (ALD), material analyses and electrical characterisation techniques, and an understanding of the hardware neural networks based on emerging devices. The thesis will be a part of a wider project, and the student will become a part of our research team. We are looking for creative and dedicated team players, prior experience in related areas is a plus.

Nanoelsen - Nanostructured thin-film materials characterized by weak binding interactions for electronic and sensoric applications
Duration:	1. 7. 2022 - 30. 6. 2026
Evidence number:	APVV-21-0278
Program:	APVV
Project leader:	RNDr. Gregušová Dagmar, DrSc.
SAS cosolvers:	Ing. Blaho Michal, PhD., RNDr. Gregušová Dagmar, DrSc., RNDr. Haščík Štefan, PhD., Mgr. Hrdá Jana, PhD., Ing. Pohorelec Ondrej, PhD., RNDr. Pribusová Slušná Lenka, PhD., Mgr. Sojková Michaela, PhD., Mgr. Vojteková Tatiana
Annotation:	The proposed project is focused on the basic research of the preparation processes and properties ofsemiconducting sulfides of transition metals such as Mo, W and Ni and selected combinations with their oxides inthe form of mixed sulfides and oxides, as well as the possibilities of their doping with noble metals (Pt, Au) for usein gas sensors as well as in supercapacitors. We also anticipate full utilization of semiconductormicroelectronic and micromechanical techniques and micro / nanotechnologies, which can significantly contributeto qualitatively improved detection properties, low operating power consumption of gas sensors as well asincreased energy efficiency and supercapacitor lifetime.

New semiconductor materials for pixel sensors with applications in digital radiography
Duration:	1. 1. 2024 - 30. 6. 2026
Evidence number:	09I05-03-V02-00073
Program:	Plán obnovy EÚ
Project leader:	Mgr. Zaťko Bohumír, PhD

Perspective ionizing radiation detectors for high-energy particles
Duration:	1. 7. 2024 - 30. 6. 2026
Evidence number:	09I03-03-V06-00108
Program:	Plán obnovy EÚ
Project leader:	Mgr. Zaťko Bohumír, PhD
Annotation:	The aim of the project is to procure a research infrastructure that will be used during the implementation of the project APVV-22-0382 and for conducting further independent research and development carried out by the organization.he knowledge gained will be used to develop new ultra-thin, low-friction coatings for various metal substrates based on 2D materials, suitable for use in vacuum environments.

Advanced 2D based hybrid supercapacitor devices
Duration:	1. 3. 2024 - 30. 6. 2026
Evidence number:	09I05-03-V02-00037
Program:	Plán obnovy EÚ
Project leader:	Mgr. Sojková Michaela, PhD.

Lubrication challenge for ultra-thin advanced 2D-TMDC in extreme conditions
Duration:	1. 7. 2024 - 30. 6. 2026
Evidence number:	09I03-03-V04-00709
Program:	Plán obnovy EÚ
Project leader:	Mgr. Kozak Andrii, PhD.
Annotation:	The friction, stiction, adhesion, and wear are significantly influenced not only by the chemical and physical properties of the objects in relative motion but also by their shape, dimensions of the interacted area, and environment. Tightening the moving objects to the nanoscale make surface forces dominate the tribological behaviour, and the appearance of additional energy dissipation mechanisms can be observed, which can be critical for the lifetime and reliability of the devices. In turn, the environment renders multi-varied effects on the sliding interface, promoting the structural superlubricity or opposite extremally high friction caused by atomic interactions. The aim of this project is fabrication of low-friction wear-protected surfaces coating system applicable to advanced applications at the nano- and macroscale. Ultrathin coating of new 2D TMDs (PtSe2, MoSe2) will be formed with the aim to investigate their structure evolution during sliding in ambient air, vacuum environment as well as at elevated temperatures. The friction and wear processes on the surface of 2D materials and their interfaces will be systematically analysed by means of nanoscale and macroscale friction analysis. The gained knowledge will be then used to develop new ultrathin materials as a low-friction coating for different type of metal surfaces.

Smart gas and temperature sensors with neural-network-based low-level in-sensor data processing capability
Duration:	1. 1. 2024 - 30. 6. 2026
Evidence number:	09I05-03-V02-00058
Program:	Plán obnovy EÚ
Project leader:	Ing. Hudec Boris, PhD.

Study of TMD-based 2D heterostructures (TO-DO)
Duration:	1. 7. 2024 - 30. 6. 2026
Evidence number:	SK-AT-23-0021
Program:	APVV
Project leader:	Mgr. Sojková Michaela, PhD.

Transit2D - Transistors based on 2D Metal Chalcogenides Grown via Thermally Assisted Conversion
Duration:	1. 7. 2022 - 30. 6. 2026
Evidence number:	APVV-21-0231
Program:	APVV
Project leader:	Ing. Ťapajna Milan, PhD.
SAS cosolvers:	Mgr. Egyenes Fridrich, PhD., Ing. Eliáš Peter, Ing. Fedor Ján, PhD, Mgr. Feilhauer Juraj, PhD., RNDr. Gregušová Dagmar, DrSc., Ing. Gucmann Filip, PhD., Mgr. Hrdá Jana, PhD., Ing. Hrubišák Fedor, Ing. Hudec Boris, PhD., Dr. rer. nat. Hulman Martin, RNDr. Hušeková Kristína, Mgr. Hutár Peter, PhD., MSc. Keshtar Javad, Mgr. Laurenčíková Agáta, PhD., Ing. Pohorelec Ondrej, PhD., RNDr. Pribusová Slušná Lenka, PhD., Mgr. Sojková Michaela, PhD., Ing. Stoklas Roman, PhD., Ing. Ťapajna Milan, PhD., Mgr. Vojteková Tatiana
Annotation:	2D materials can form one-atom-thick sheets with extraordinary properties. One of the most promising classes of2D materials is the transition metal dichalcogenides (TMDs). The transition from an indirect to a direct bandgap,when the bulk materials is thinned down to a monolayer, results in unique electrical and optical properties of 2DTMDs. Post-transition metal chalcogenides (PTMCs) represents another interesting group of 2D materials. Thesematerials have wide band gap and, depending on the structure of the material, show anisotropic electrical andoptical properties. The aim of this project is the fabrication of field-effect transistors with metal-oxide-semiconductorgate (MOSFETs) based on selected TMDs and PTMCs compounds and detail analysis of their transport properties.We will focus on large-area few-layer PtSe2 and GaS/GaSe films grown by thermal assisted conversion, i.e.sulfurization and selenization. Based on the existing experiences, structural, chemical and electrical properties ofhorizontally-aligned PtSe2 films prepared by selenization will be optimized, targeting mobilities similar to thoseprepared by mechanical exfoliation. Then, MOSFET technology using both, top-gate as well as bottom-gateapproach will be developed and optimized. Atomic layer deposition and metal-oxide chemical vapor deposition(MOCVD) will be employed for gate oxide growth. GaS/GaSe few-layer films will be prepared by chalcogenization

Large-scale production and characterization of 2D materials
Duration:	1. 9. 2023 - 30. 6. 2026
Evidence number:	09I03-03-V02-00044
Program:	Plán obnovy EÚ
Project leader:	Mgr.Phil. Ahmad Faizan

Research of fabrication technology for low-cost oxide-based semiconductorelectronic devices for IoT and sensor applications
Duration:	1. 1. 2024 - 30. 6. 2026
Evidence number:	09I05-03-V02-00030
Program:	Plán obnovy EÚ
Project leader:	Ing. Ťapajna Milan, PhD.

SUPENKA - Superconducting energy cables
Duration:	1. 4. 2024 - 31. 3. 2026
Evidence number:	09I01-03-V04 -00020
Program:	Plán obnovy EÚ
Project leader:	doc. Ing. Gömöry Fedor, DrSc.
Annotation:	The SUPENKA project follows up the European SCARLET project, the aim of which is to develop a superconducting cable for direct current at medium voltage level of 25-50 kV, which results in the removal of the converter platform (around 10,000 tons of material). Such a solution can be advantageously used, for example, in transmission from a wind turbine farm, where direct current can be directly obtained in the turbine structure at the medium voltage level (25 to 100 kV).The proposed SUPENKA project aims to develop in more detail some aspects of the problem solved in the SCARLET project. In the scientific field, there are two main goals: • C1: Development of a methodology for including the inhomogeneity of superconducting properties in the analysis of the stability of current transmission by a superconducting cable • C2: Verification of the possibilities of cooling superconducting cables with non-traditional cooling media. The basic verification of the methodology on short samples has already taken place, therefore the starting level of the SUPENKA project is in the range of TRL 3-4, and the intention is to reach the level of TRL 5.The SUPENKA project will contribute to the fulfillment of the ambitious climate goals of the EC work program "Sustainable, secure and competitive energy supply" aimed at transforming the energy system and shifting energy supply towards climate neutrality within two areas of influence: • Leading position of European industry in key and new technologies for benefit of people • Affordable and clean energy

SPEARhydro - Harnessing the energy of rivers for everyone
Duration:	1. 10. 2024 - 31. 3. 2026
Evidence number:	09I04-03-V03-00001
Program:	Plán obnovy EÚ
Project leader:	Mgr. Soloviov Mykola, PhD.

Development of Electronic System Interface of Neuromorphic Arrays for In-Sensor Computing
Duration:	1. 1. 2025 - 31. 12. 2025
Evidence number:	APP0660
Program:	DoktoGrant
Project leader:	Dehghan Mohammad

Critical aspects of the growth for a new generation of III-N devices
Duration:	1. 1. 2022 - 31. 12. 2025
Evidence number:	2/0005/22
Program:	VEGA
Project leader:	Ing. Kuzmík Ján, DrSc.
SAS cosolvers:	Ing. Blaho Michal, PhD., doc. RNDr. Dobročka Edmund, CSc., Ing. Eliáš Peter, Ing. Hasenöhrl Stanislav, RNDr. Haščík Štefan, PhD., RNDr. Kučera Michal, PhD, Mgr. Laurenčíková Agáta, PhD., Mgr. Nádaždy Peter, PhD., Ing. Pohorelec Ondrej, PhD., Ing. Rosová Alica, CSc., Ing. Stoklas Roman, PhD., Mgr. Šichman Peter
Annotation:	Gallium Nitride (GaN) compounds are investigated for a new generation of high-frequency transistors, powerelectronics and post CMOS logic circuits. Flexibility in this area is given by a miscibility of In and Al with GaN,providing a wide spectra of semiconductors with a possibility of setting an energy band-gap from 0.65 eV to 6.2eV, with countless combinations of heterostructures. Basis of our project is given by study and mastering of thegrowth of unique material concepts using a metal-organic chemical-vapour deposition (MOCVD) technique. Weaim to investigate: i/ transistors with N-polar InN channel, ii/ MOS contacts on N-polar heterostructures, iii/transistors with a hole conduction, as well as iv/ vertical structures on GaN substrate. Part of the project will berepresented by characterisation activities, like investigation of the electron transport properties in N-polar InN, in MOS structures, study on the 2-dimensional hole gas as well as transient effect in C-doped vertical transistors.

Modification of properties of superconducting, ferromagnetic, oxide films and structures for advanced electronics
Duration:	1. 1. 2022 - 31. 12. 2025
Evidence number:	2/0140/22
Program:	VEGA
Project leader:	RNDr. Španková Marianna, PhD
Annotation:	We prepare and study oxide – ferromagnetic and dielectric perovskite thin films and micro- and nano structures as well as selected current superconducting films. YBa2Cu3Ox (YBCO) and La0.67Sr0.33MnO3 (LSMO) microstrips will be exposed different types of organic molecules to study their influence on the superconducting and ferromagnetic film properties. Following the results of the previous VEGA project, we will continue to study the superconductor S/ferromagnet F and S/F/S structures focusing on a creation of magnetic inhomogeneities with the aim to increase the triplet component of superconductivity and resolve the phenomenom of S/F thin films interaction (proximity effect). As part of the project, we will investigate the possibility of superconducting behavior of a two-dimensional MoS2 system deposited by pulsed laser deposition.

Raman and FTIR low-temperature study of PtSe2, MoTe2 and WTe2 thin films
Duration:	1. 7. 2024 - 31. 12. 2025
Evidence number:	APD0021
Program:	PostdokGrant
Project leader:	RNDr. Pribusová Slušná Lenka, PhD.

Growth and optical characterization of 2D materials: MoTe2, WTe2, PtTe2
Duration:	1. 1. 2023 - 31. 12. 2025
Evidence number:	2/0046/23
Program:	VEGA
Project leader:	RNDr. Pribusová Slušná Lenka, PhD.
SAS cosolvers:	Dr. rer. nat. Hulman Martin, Ing. Precner Marián, PhD., Mgr. Végsö Karol, PhD., Mgr. Vojteková Tatiana
Annotation:	Research of thin-film materials noticed a significant increase, especially since the discovery of graphene, when a wide range of 2D materials began to study. A significant group of 2D materials is transition metal dichalcogenides(TMDs), including MoTe2, WTe2, and PtTe2. These materials have unique optoelectronic properties that varydue to the thickness of the layer and the crystal structure. Electrical properties vary depending on structures, fromsemiconducting to metallic. The preparation of films by tellurization of molybdenum, tungsten, and platinum ismore difficult than sulfurization or selenization due to the weaker redox properties of tellurium. The challenge in thin films is the controlled preparation of the required crystal structure of homogenous large-arealayers. This project aims to contribute to the solution of preparing these materials, characterize their structure and orientation of the films concerning the substrate, and determine the optical parameters and electrical properties.

Superconducting joints of MgB2 wires for windings in persistent mode
Duration:	1. 1. 2022 - 31. 12. 2025
Evidence number:	2/0017/22
Program:	VEGA
Project leader:	Ing. Kováč Pavol, DrSc.
SAS cosolvers:	Ing. Berek Dušan , Ing. Búran Marek, PhD., Ing. Hušek Imrich, Mgr. Kováč Ján, PhD., Ing. Melišek Tibor, Ing. Rosová Alica, CSc.
Annotation:	The idea of this project is to make and optimize superconducting joints between the composite MgB2 wiresmanufactured by powder-in-tube method „PIT“ and by the infiltration or diffusion of magnesium into boronprocess „IMD“ and use it for winding working in „persistent mode“. It will be done dominantly for superconductingjoints of winding made by „wind and react“ technique, but joints for winding with already reacted MgB2 wiresmade by „react and wind“ process will be developed as well. The properties of manufactured superconductingMgB2 joints of different geometry and architecture will be subjected to mechanical and thermal treatments, which would reach the joint current around 50% of critical current measured for the reference MgB2 wire at external field 5 T.

REBCO superconductor tensile and compressive limits - methodology
Duration:	1. 7. 2024 - 31. 12. 2025
Evidence number:	APD0064
Program:	PostdokGrant
Project leader:	Ing. Kujovič Tomáš, PhD.

Ultra-thin conformal surface coatings of complex-morphology structures for improving battery performance using atomic layer deposition
Duration:	1. 1. 2022 - 31. 12. 2025
Evidence number:	2/0162/22
Program:	VEGA
Project leader:	Ing. Hudec Boris, PhD.
SAS cosolvers:	Ing. Fröhlich Karol, DrSc., RNDr. Hušeková Kristína, RNDr. Mošková Antónia, CSc., Ing. Rosová Alica, CSc., Seifertová Alena
Annotation:	Project is focused on the development and optimization of method of 3D deposition of conformal ultra-thincoatings using ALD (atomic layer deposition) on structures of complex morphology, such as micro-porous layersand powders. The method will subsequently be applied in preparation of new generation Li-based batteries, bypassivation and modification of micro-porous surfaces of cathode layers. Effect of ultra-thin ALD coatingsconformality at the nano-scale will be systematically evaluated by correlation of electron microscopy analyseswith electrochemical measurements of prepared batteries. Next step will be the modification of surfaces ofdiscrete metal and ceramic micro-particles and powders with the aim of their subsequent application in fabrication of novel ceramic and metal materials and also new materials for experimental battery electrodes.

Impact of substrate material on positive bias temperature instabilities in enhancement mode Al2O3/InAlN/GaN MOSHEMTs
Duration:	1. 7. 2024 - 31. 12. 2025
Evidence number:	24183001
Program:	PostdokGrant
Project leader:	Ing. Pohorelec Ondrej, PhD.

Fabrication of ferromagnetic nanostructures for magnonic crystal
Duration:	1. 7. 2024 - 31. 12. 2025
Evidence number:	24182002
Program:	PostdokGrant
Project leader:	Mgr. Vetrova Iuliia, PhD.

Modern electronic devices based on ultrawide bandgap semiconducting Ga2O3 for future high-voltage applications
Duration:	1. 7. 2021 - 30. 6. 2025
Evidence number:	20-0220
Program:	APVV
Project leader:	Ing. Gucmann Filip, PhD.
SAS cosolvers:	doc. RNDr. Dobročka Edmund, CSc., Mgr. Egyenes Fridrich, PhD., Ing. Fröhlich Karol, DrSc., RNDr. Gregušová Dagmar, DrSc., Ing. Hrubišák Fedor, RNDr. Hušeková Kristína, MTech. Chouhan Hemendra, MSc. Keshtar Javad, Mgr. Nádaždy Peter, PhD., Ing. Rosová Alica, CSc., Ing. Ťapajna Milan, PhD.
Annotation:	Wide bandgap (WBG) semiconductor devices represent one of the key technologies in development of high power and high frequency systems for electric power conversion and telecommunications owing to their fundamental benefit of higher breakdown electric fields, in some cases increased electron mobility, and possibility to form heterostructures and 2D electron gas. GaN and SiC, two typical WBG examples also benefit from moderate values of thermal conductivity allowing for more efficient sinking of generated waste heat, lower channel temperatures, and enhanced device reliability. New emerging semiconductor materials with even higher bandgap energies (Eg>3.4eV) referred to as ultrawide bandgap materials allow for further improvements in high power and high voltage handling solid-state electronic devices. Currently, semiconducting gallium oxide (Ga2O3) is under extensive study and expected to provide base material for rectifying Schottky -gate diodes and field-effect transistors for applications operating in kV range thanks to its good scalability, relatively simple synthesis, availability of native melt-grown substrates, and wide range of achievable n-type doping levels. The main aim of the proposed project constitutes material research and development of technology for epitaxial growth of epitaxial α -,β-, and ε-Ga2O3 layers and for processing of basic unipolar and bipolar electronic devices based on prepared Ga2O3 layers for future high voltage/power applications. Ga2O3 layers will be grown using liquid injection metalorganic chemical vapour deposition on sapphire, and higher thermal conductivity SiC substrates. We also aim to prepare Schottky diodes, FETs, and all-oxide Ga2O3 PN diodes using naturally p-type oxides (e.g. NiO, In2O3, CuO2). Comprehensive structural, electrical, optical, and thermal study of prepared epitaxial layers and devices will be conducted and numerous original, high-impact results are expected to be obtained.

NanoMemb-RF - Advanced GaAs-based nanomembrane heterostructures for highperformance RF devices
Duration:	1. 7. 2022 - 30. 6. 2025
Evidence number:	APVV-21-0365
Program:	APVV
Project leader:	RNDr. Gregušová Dagmar, DrSc.
SAS cosolvers:	Ing. Blaho Michal, PhD., Mgr. Egyenes Fridrich, PhD., Ing. Eliáš Peter, Ing. Fedor Ján, PhD, RNDr. Gregušová Dagmar, DrSc., Ing. Gucmann Filip, PhD., RNDr. Haščík Štefan, PhD., Mgr. Hrdá Jana, PhD., Ing. Hrubišák Fedor, MSc. Keshtar Javad, Ing. Pohorelec Ondrej, PhD., RNDr. Pribusová Slušná Lenka, PhD., Ing. Stoklas Roman, PhD., Ing. Ťapajna Milan, PhD.
Annotation:	The main aim of the proposed project is to expand the basic knowledge and to master the fabrication technology ofthe advanced nanomembrane AlGaAs/GaAs heterojunction devices for high-performance RF applications.Insufficient removal of the waste heat in electronic devices due to the Joule losses leading to overheating and earlydevice failure often requires foreign, high thermal conductivity substrates to be employed. As opposed to themainstream research of the GaN-based electronic devices prepared directly on sapphire or SiC, proposed GaAsbased devices will be fabricated upon self-supporting heterostructure nanomembranes transferred onto varioussubstrates. It is very timely, original, and desirable approach to extend the utilization of the GaAs-based devicesmaterial potential, as demonstrated by our preliminary results.

TREND - Optimization of round high-temperature supercnoducting cable for pulse magnetic field
Duration:	1. 7. 2021 - 30. 6. 2025
Evidence number:	20-0056
Program:	APVV
Project leader:	doc. Ing. Gömöry Fedor, DrSc.
Annotation:	The project is focused on an optimization of a cable made of high temperature superconducting tapes wound on acore in form of a tube with the possibility of cooling the cable by the coolant flowing through the former. Thepurpose of the optimization is a significant decrease of AC losses, which can be achieved through threemodifications of the cable. The first one is to reduce the width of the 4 mm superconducting tape down to 1 mmwith steps smaller than 0.2 mm. The tuning of the tape width should allow to prepare the cables with optimalpacking of the cable layers and with greater flexibility. The second modification is an additional narrowing of thesuperconductor width by striation scribing the superconducting layer along the tape with already optimized width.Both processes require a development of a suitable method for the cutting and scribing process of thesuperconducting tapes with minimal impact on their mechanical, structural and electrical properties. The thirdmodification is the innovation of the central former, which should fulfill requirement of significantly reduced electricalconductivity. Modified superconducting tapes and cables prepared from them will be characterized in terms ofmechanical and electromagnetic properties. Most of the experiments will be supported by computer modeling.

PEGANEL - p-GaN electronics for energy savings and beyond-CMOS circuits
Duration:	1. 7. 2022 - 30. 6. 2025
Evidence number:	APVV-21-0008
Program:	APVV
Project leader:	Ing. Kuzmík Ján, DrSc.
SAS cosolvers:	Ing. Blaho Michal, PhD., doc. RNDr. Dobročka Edmund, CSc., Mgr. Egyenes Fridrich, PhD., Ing. Eliáš Peter, RNDr. Gregušová Dagmar, DrSc., Ing. Gucmann Filip, PhD., Ing. Hasenöhrl Stanislav, RNDr. Haščík Štefan, PhD., Ing. Hudec Boris, PhD., RNDr. Kučera Michal, PhD, Ing. Kuzmík Ján, DrSc., Mgr. Laurenčíková Agáta, PhD., Mgr. Nádaždy Peter, PhD., Ing. Pohorelec Ondrej, PhD., Ing. Rosová Alica, CSc., Ing. Stoklas Roman, PhD., Mgr. Šichman Peter, Ing. Ťapajna Milan, PhD.
Annotation:	III-N semiconductors are probably the most versatile and promising semiconductor family, consisted of artificialcompounds made of GaN, AlN and InN. In the project proposal we describe new technological concepts withsufficient freedom to solve main problems of the III-N post-beyond CMOS age: in transistors co-existence of theparasitic n-channel along with the p-channel, as well as low hole gas density and mobility. Similarly, we aim todemonstrate scalable threshold voltage in the enhancement-mode p-doped power transistors, which are needed bythe industry for efficient, energy-saving convertors. In these aspects, our laboratories already showed verypromising results proving the competence to reach described targets. If successfully implemented, results of ourproposed project would represent a significant step forward not only from the world-wide point of view but is also infull agreement with the RIS3 SK (perspective areas of specialization of the Slovak economy), particularly in thefield of semiconductors for electric cars of automotive industry, as well as in information and communicationsciences.

GRaDe - Growth and Radiation Mechanisms in Diamond Hybrid Detectorsd Radiation Mechanisms in Diamond Hybrid Detectors
Duration:	1. 7. 2022 - 30. 6. 2025
Evidence number:	SK-CZ-RD_21/0016
Program:	APVV
Project leader:	Mgr. Zaťko Bohumír, PhD

Finished

Scholarships for excellent researchers threatened by the war conflict in Ukraine
Duration:	1. 4. 2022 - 31. 3. 2025
Evidence number:	09I03-03-V01-00006
Program:	Plán obnovy EÚ
Project leader:	RNDr. Kalmykova Tetiana, PhD.