Applicant will deal with the growth and processing of epitaxial III-N quantum structures prepared by metal-organic chemical-vapor deposition. Main emphasize will be given to heterostructure quantum wells containing In(Al)N compounds for future ultra-fast transistors, mixed-signal electronics as well as GaN-based vertical switches. Material study will include several techniques for structural, electrical and optical investigations. Finally, applicant will process various test structures and innovative electronic devices. Applicant should have PhD degree related to semiconductor physics, knowledge of the materials science, and hands-on experience with epitaxial growth and device processing.
Experience required: min. 3 years in the field
Salary based on the law no. 553/2003 Z.z., starting 1800 EUR.
Application deadline: October 7, 2025
Contact: Ing. Ján Kuzmík, DrSc., tel. +421 2 5922 2363
jan.kuzmik@savba.sk