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| Príprava a charakterizácia pokročilých GaN nano-hetero-štruktur | |
| Advanced GaN nano-hetero-structures – preparation and characterization | |
| Program: | Inter-academic agreement |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.1.2017 – 31.12.2017 |
| ERG – Zelená energia pre spoločnosť | |
| Energy for a Green Society | |
| Program: | ENIAC |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.6.2011 – 31.5.2014 |
| Nová výkonná optika pre infračervenú oblasť založená na gáliumfosfide VGF GaP | |
| New power optics for infrared range based on gallium phosphide | |
| Program: | EUREKA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.3.2007 – 1.4.2010 |
| Supravodivé pásky a polovodičové kvantové bodky: nanoštruktúry pre súdobé informatické a energetické technológie | |
| Superconducting tapes and semiconductor quantum dots: nanostructures for todays information and energy technologies | |
| Program: | Bilateral – other |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.1.2008 – 31.12.2009 |
| Pokročilé nanoštruktúry a materiály pre využitie v informačných a energetických technológiách. Štrukturálne aspekty | |
| Advanced nanostructures and materials for applications in informations and energy Technologies. Structural and electrotechnical aspects | |
| Program: | Inter-academic agreement |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Annotation: | no description |
| Duration: | 1.1.2006 – 31.12.2007 |
| – | |
| Investigation of metal-insulator-semiconductor structures of GAN for high-frequency and high-power devices | |
| Program: | Inter-academic agreement |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Annotation: | no description |
| Duration: | 1.1.2005 – 31.12.2006 |
| Štúdium GaN heteroštruktúr (kov-izolant-polovodič) | |
| Investigation of metal-insulator-semiconductor structures of GAN for high-frequency and high-power devices | |
| Program: | Inter-academic agreement |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Annotation: | no description |
| Duration: | 1.1.2005 – 31.12.2006 |
| VGFGAPLED – Gálium fosfidové substráty pripravené metódou VGF pre použitie na prípravu luminiscenčných diód | |
| New gallium phosphide grown by vertical gradient freeze method for light emitting diodes | |
| Program: | FP6 |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.2.2002 – 1.8.2005 |
National
| Fotonické laboratórium na čipe: výskum a vývoj platformy plazmonického senzora pre okamžitú detekciu zložiek v roztokoch | |
| Photonic Lab-on-a-Chip: investigation and development of plasmonic sensor platform for immediate detection of composites in solutions | |
| Program: | SRDA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.7.2021 – 31.12.2024 |
| Nanooptické sondy a senzory integrované na optickom vlákne | |
| Nano-optical probes and sensors integrated on optical fiber | |
| Program: | SRDA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.8.2021 – 31.12.2024 |
| Výskum a vývoj kontaktov pre nové materiály a súčiastky | |
| Contact engineering for advanced materials and devices | |
| Program: | VEGA |
| Project leader: | RNDr. Gregušová Dagmar, DrSc. |
| Annotation: | Intensive research has so far been done into metallic contacts to semiconductors. However, new types ofconductivity, materials and devices, and new contact formation mechanisms require new insights into theformation of such contacts. Our aim is to determine the processes and physics behind metallization schemes fornormally-off InAlN-based heterostructure high electron mobility transistors with hole conductivity. InAlN with ahigh molar fraction of InN will be doped with Mg, and the ohmic and Schottky metallic stacks will be optimized. New transition metal dichalkogenide materials (TMDCs) are very promising for new device applications. However,metallization schemes for TMDCs are very challenging. TMDCs exhibit varying band gap widths in dependenceof their thickness. Our aim is to study metallization schemes for TMDCs, their topology, and explain differences between ex-foliated and grown samples, and differences between back-gated and top-gated devices in correlation with basic TMDCs properties. |
| Duration: | 1.1.2021 – 31.12.2024 |
| Fotonické nanoštruktúry pripravené laserovou 3D litografiou pre biosenzory | |
| Photonic nanostructures prepared by 3D laser lithography for biosensing | |
| Program: | SRDA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.7.2017 – 31.12.2020 |
| Moderné nanoštruktúry pripravené sofistikovanou MOVPE technológiou | |
| Advanced nanostructures prepared by sophisticated MOVPE technology | |
| Program: | VEGA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Annotation: | This project is focused on the preparation of advanced nanowires and nanocones prepared by MOVPEtechnology. The main goal of the project is to study the growth and properties of GaP and GaN based nanowiresprepared by vapour-liquid-solid (VLS) technique. In addition we will concentrate our efforts on improvements andenhancement of the most recent experience obtained within previous projects. Our research will be focused intothree areas: (i) stemming from the expected application a most suitable material system will be applied (ii) themodification of the growth conditions (mainly diameter of seeds, growth temperature andV/III ratio) with the aim tomodify mechanical dimension of the nanowires (i.e. transfer from nanowires to nanocones) (iii) acquire newknowledge on the deposition of the metallic nanograins on the top of the nanocones and nanowires with aim tooptimize their properties for the SERS experiments. |
| Duration: | 1.1.2017 – 31.12.2020 |
| Univerzálna nanoštrukturovaná platforma pre interdisciplinárne použitie | |
| Universal nanorod platform for interdisciplinary applications | |
| Program: | SRDA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.7.2015 – 31.12.2018 |
| Fotonické štruktúry pre integrovanú optoelektroniku | |
| Photonic structures for integrated optoelectronics | |
| Program: | SRDA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.10.2013 – 31.12.2016 |
| Nanoštruktúry a ich aplikácie v optoelektronických súčiastkach | |
| Advanced nanostructures for application in optoelectronic devices | |
| Program: | VEGA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.1.2013 – 31.12.2016 |
| Výskum prípravy moderného polovodičového materiálu a substrátov VGF GaP o priemere 100 mm pre potreby konverzie CO2 na užitočné chemikálie | |
| Research and development of advanced semiconductor material and substrates VGF GaP with 100 nm diameter for conversion of CO2 into value addeed chemicals | |
| Program: | EU Structural Funds Research & Development |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.2.2012 – 30.11.2015 |
| GRONA – Príprava nanodrôtov pre fotovoltaické aplikácie | |
| Growth of nanowires for photovoltaic applications | |
| Program: | SRDA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.5.2011 – 31.10.2014 |
| Moderné polovodičové súčiastky s precízne navrhnutou pásovou štruktúrou a povrchovými vlastnosťami | |
| Advanced semiconductor structures with tailored band-gap structure and surface properties | |
| Program: | VEGA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.1.2009 – 21.12.2012 |
| MOS HFET tranzistory na báze III-V polovodičov pre vysokoteplotné aplikácie | |
| MOS HFET transistors based on III-N semiconductors for high temperature applications | |
| Program: | SRDA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.9.2009 – 30.8.2012 |
| Syntéza nitridu hliníka AlN na báze PBN technológie | |
| AlN synthesis based on PBN technology | |
| Program: | SRDA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.9.2009 – 30.9.2011 |
| CENAMOST – Centrum excelencie NAno-/mikro-elektronických, optoelektronických a senzorických technológií | |
| Centre of Excellence in Nano-/Micro-electronic, Optoelectronic and Sensoric Technologies | |
| Program: | SRDA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.7.2008 – 30.6.2011 |
| Epi-ready substráty VGF GaP (S) | |
| Epi-ready substrates VGF GaP (S) | |
| Program: | SRDA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.6.2008 – 31.12.2010 |
| INFRALENS – Nová optika založená na VGFGaP pre infračervené senzory | |
| New power optics for infrared range based on gallium phosphide | |
| Program: | Podpora MVTS z prostriedkov SAV |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 16.7.2009 – 31.12.2009 |
| Nová výkonná optika pre infračervenú oblasť založená na gáliumfosfide VGF GaP | |
| New power optics for infrared range based on gallium phosphide | |
| Program: | SRDA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.2.2007 – 31.12.2009 |
| Výskum vzniku a vlastností pyrolytického nitridu bóru-PBN | |
| Research work on formation and properties of pyrolytic boron nitride | |
| Program: | SRDA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.1.2008 – 31.12.2009 |
| Nanorozmer a jeho vplyv na vlastnosti MOCVD polovodičových vrstiev a štruktúr | |
| Nanodimension and its influence on properties of movpe semiconductor layers and structures | |
| Program: | VEGA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.1.2006 – 1.12.2008 |
| Epitaxné heteroštruktúry pre luminiscenčné diódy s vysokou svietivosťou pripravené na základe substrátov GaP | |
| – | |
| Program: | SRDA |
| Project leader: | doc. Ing. Novák Jozef, DrSc. |
| Duration: | 1.2.2004 – 31.12.2006 |