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| ATOPLOT – 3D ploter na báze nanášania po atómových vrstvách | |
| The atomic-layer 3D plotter | |
| Program: | Horizon 2020 |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Project webpage: | https://cordis.europa.eu/project/id/950785 |
| Duration: | 1.5.2020 – 30.4.2022 |
| TRANSCOE – Vývoj nových vodivých priehladných elektród pre organickú elektroniku | |
| Development of new designed transparent conductive electrodes for organic electronics | |
| Program: | Bilateral – other |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Annotation: | Subject of the proposed project is preparation of new transparent conductive electrodes with high transparency and low sheet resistance for organic photovoltaic\’s (OPVs) and organic light emitting diodes (OLEDs). The project will focus on five issues; i) electrode design ii) synthesis of conductive electrodes; iii) fabrication, characterization and optimization of transparent electrodes; iv) fabrication and characterization of OPVs and OLEDs to test the performance of the prepared transparent conductive electrodes; v) encapsulation. We will prepare OPVs and OLEDs with incorporated novel electrode design and test the performances of the devices when the electrode materials will be deposited on glass and/or flexible substrate. Transparent conductive electrodes will be based either on organic Ag-nanowire network -organic multilayered structure or on atomic layer deposited Al-doped ZnO films. The electrodes will be characterized and optimized by measuring the sheet resistance and light transmission. The sheet resistance of the electrode should be adjusted to below 12 Ω and 50 Ω sq−1 for organic and Al-doped ZnO films transparent electrodes, respectively. Finally, OPVs and OLEDs will be encapsulated using atomic layer deposited thin films and their performance will be examined. Proposed project includes two different approaches of transparent conducting electrodes preparation for OPVs and PLEDs. Evaluation of performance of these two types of electrodes presents important and unique output of the project. As a result of the project A step to commercialization of new transparent conductive electrodes, OPVs and OLEDs will be achieved through international collaboration. Funding of the proposed project will create seed for setting up a new research on flexible electronics, Organic Field Effect Transistors (OFETs), Organic Thin Film Transistors (OTFTs), and nanotechnology applications in electronic and photonics for both partners. |
| Duration: | 1.2.2017 – 31.1.2020 |
| HERALD – Zachytenie spoločného európskeho výskumu v nanášaní po atomárnych vrstvách | |
| Hooking together European research in atomic layer deposition | |
| Program: | COST |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Project webpage: | http://www.cost.eu/COST_Actions/mpns/Actions/MP1402 |
| Duration: | 4.12.2014 – 4.12.2018 |
| MORGaN – Materiály pre robustný nitrid gália | |
| Materials for Robust Gallium Nitride | |
| Program: | FP7 |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Duration: | 1.11.2008 – 31.10.2011 |
| Výskum dielektrických vlastností a prenikanie prúdov vRu/high-k (Ta2O5,(Hf,Ti)-dotované Ta2O5) kondenzátormi pre pokročilé sub-90 nm technológie uzlové aplikácie | |
| Investigation of dielectric properties and leakage currents in Ru/high-(Ta205,(hf,Ti)-doped Ta205)capacitors for advanced sub-90nm technology and applications | |
| Program: | Inter-institute agreement |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Annotation: | no description |
| Duration: | 1.1.2006 – 31.1.2009 |
| ULTRAGAN – Technológia InAlN(In)GaN heteroštruktúr pre mikrovlnný tranzistor s ultra vysokým výkonom | |
| InAlN/(In)GaN heterostructure technology for ultra-high power microwave transistor | |
| Program: | FP6 |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Annotation: | Next generation wireless network base stations, satellite communication systems and compact digital radar are just few examples where GaN-based devices can multiply the efficiency of amplifiers. However, improvements in GaN-based High Electron Mobility Transistors (HEMTs) are limited by the physics of already established AlGaN/GaN heterostructure system. ULTRAGAN project is aiming to explore new heterostructures using InAlN/(In)GaN alloys. The objective is to triple the HEMTs power density if compared to the state-of-the-art large periphery AlGaN/GaN HEMTs, InAlN/(In)GaN HEMTs are to demonstrate power densities of 30W/mm at 2 to 12 GHz. These parameters can be achieved primarily because of expected extremely high 2-dimensional electron gas density coupled with polarisation fields in the InAlN/(In)GaN heterojunction. The project gives to Europe an opportunity to come back at the edge of the microwave research, which is right now much stronger in the USA. and Japan. Research teams from pure academia to industrial application laboratories will be combined to secure high efficiency research. Molecular Beam Epitaxy (MBE) and Metallorganic Chemical Vapour Deposition (MOCVD) techniques will be explored to develop devices including InAlN/GaN single heterojunction (SH) and InAlN /(In)GaN/(In,Al)GaN double heterojunction (DH) systems. Better confinement in the DH is a very attractive approach to limit the role of deep electrical levels by reducing electron emission out of the channel. Moreover the chemistry of InAlN surface is expected to be different to GaN or AlGaN and more stable device surface might be discovered. A strong research will be carried out on the device passivation. In this way transistor I-V instabilities such as drain lags might be eliminated. The project also involves physical and thermal simulation, device processing and a full AC/DC HEMT characterization for a thorough device optimization. The Consortium team is composed of scientists from Austria, France, Germany, Greece, Slovakia and Switzerland. |
| Project webpage: | http://www.ultragan.eu/ |
| Duration: | 17.10.2005 – 16.10.2008 |
| THIOX – Tenké vrstvy pre nové súčiastky na báze oxidov | |
| Thin films for novel oxide devices | |
| Program: | European Science Foundation (ESF) |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Annotation: | no description |
| Project webpage: | www.esf.org/esf_article.php?language=0&article=322&domain=1&activity=1 |
| Duration: | 1.6.2003 – 30.6.2008 |
| Tenké oxidové vrstvy pre využitie v nanoelektronike | |
| Thin oxide films for nanoelectric applications | |
| Program: | Inter-academic agreement |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Annotation: | no description |
| Duration: | 1.1.2006 – 31.12.2007 |
| INVEST – – | |
| Integration of very high-k dielectrics with silicon CMOS technology | |
| Program: | FP5 |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Duration: | 1.1.2001 – 31.12.2005 |
| Príprava tenkých vrstiev nanášaním z chemických roztokov | |
| Preparation of barriers, electrodes and oxide films for microelectronics | |
| Program: | COST |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Annotation: | no description |
| Duration: | 1.3.2001 – 1.9.2005 |
| MULTIMETOX – – | |
| Metal oxide multilayers obtained by cost-effective new CVD technologies for magnetoelectronic microsystems and nanotechnologies | |
| Program: | FP5 |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Duration: | 1.3.2000 – 28.2.2003 |
National
| Moderné elektronické súčiastky na báze ultraširokopásmového polovodiča Ga2O3 pre budúce vysokonapäťové aplikácie | |
| Modern electronic devices based on ultrawide bandgap semiconducting Ga2O3 for future high-voltage applications | |
| Program: | SRDA |
| Project leader: | Ing. Gucmann Filip, PhD. |
| Annotation: | Wide bandgap (WBG) semiconductor devices represent one of the key technologies in development of high power and high frequency systems for electric power conversion and telecommunications owing to their fundamental benefit of higher breakdown electric fields, in some cases increased electron mobility, and possibility to form heterostructures and 2D electron gas. GaN and SiC, two typical WBG examples also benefit from moderate values of thermal conductivity allowing for more efficient sinking of generated waste heat, lower channel temperatures, and enhanced device reliability. New emerging semiconductor materials with even higher bandgap energies (Eg>3.4eV) referred to as ultrawide bandgap materials allow for further improvements in high power and high voltage handling solid-state electronic devices. Currently, semiconducting gallium oxide (Ga2O3) is under extensive study and expected to provide base material for rectifying Schottky -gate diodes and field-effect transistors for applications operating in kV range thanks to its good scalability, relatively simple synthesis, availability of native melt-grown substrates, and wide range of achievable n-type doping levels. The main aim of the proposed project constitutes material research and development of technology for epitaxial growth of epitaxial α -,β-, and ε-Ga2O3 layers and for processing of basic unipolar and bipolar electronic devices based on prepared Ga2O3 layers for future high voltage/power applications. Ga2O3 layers will be grown using liquid injection metalorganic chemical vapour deposition on sapphire, and higher thermal conductivity SiC substrates. We also aim to prepare Schottky diodes, FETs, and all-oxide Ga2O3 PN diodes using naturally p-type oxides (e.g. NiO, In2O3, CuO2). Comprehensive structural, electrical, optical, and thermal study of prepared epitaxial layers and devices will be conducted and numerous original, high-impact results are expected to be obtained. |
| Duration: | 1.7.2021 – 30.6.2025 |
| Elektronické a optoelektronické súčiastky na báze ultra-širokopásmového Ga2O3 polovodiča | |
| Electronic and optoelectronic devices based on ultra-wide bandgap Ga2O3 semiconductor | |
| Program: | VEGA |
| Project leader: | Ing. Ťapajna Milan, PhD. |
| Annotation: | Recently, great research effort has been devoted to ultra-wide bandgap semiconductors for the preparation ofhigh-performance electronic devices operating in the electric fields up to tens of kV and UV photodetectors. Thisproject aims the research of the growth of epitaxial layers and electronic as well as optoelectronic devices basedon Ga2O3. Based on preliminary results, we will investigate the growth of rhombohedral Ga2O3 with the highestbandgap energy. Epitaxial layers will be prepared by metal-organic chemical vapor deposition using liquid phaseprecursor injection. The layers will be used for preparation and research of electronic devices with a focus onSchottky diodes and switching MOSFET transistors. We will study the transport and thermal properties, parasiticeffects and breakdown mechanisms of the developed electronic devices as well as electro-optical properties ofp-n heterojunctions. We will also target exploratory research for improvements in thermal management of thepower transistors. |
| Duration: | 1.1.2021 – 31.12.2024 |
| Tenkovrstvové štruktúry pre využitie v energetike | |
| Thin film structures for energy applications | |
| Program: | VEGA |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Annotation: | The project is aimed at preparation of thin film structures for energy applications. We will focus on preparationand study of properties of transparent conducting electrodes for organic photovoltaic cells and organic lightemitting diodes as well as on encapsulation of these devices in the first part. We will concentrate also onpreparation and study of properties metal-insulator-semiconductor structures suitable as photoanodes for watersplitting under sun light. The next part of the project will be devoted to study of thin film electrodes for energystorage in batteries and ton preparation of structures for supercapacitors. Thin film in these devices will beprepared by atomic layer deposition and liquid injection metal organic chemical vapour deposition. Preparedstructures will constitute a base for new advanced devices for energy applications. |
| Duration: | 1.1.2018 – 31.12.2021 |
| Fotoluminescenčné keramické materiály na báze oxynitridov kremíka | |
| Silicon oxynitride-based photoluminiscent ceramic materials | |
| Program: | SRDA |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Duration: | 1.7.2015 – 30.6.2019 |
| Štruktúry odporového prepínania pre rozpoznávanie vzorov | |
| Resistive switching structures for pattern recognition | |
| Program: | SRDA |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Duration: | 1.7.2015 – 30.6.2018 |
| Príprava tenkých vrstiev technológiou nanášania po atómových vrstvách | |
| Growth of thin films using Atomic Layer Deposition | |
| Program: | VEGA |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Duration: | 1.1.2014 – 31.12.2017 |
| Kompetenčné centrum pre nové materiály, pokročilé technológie a energetiku | |
| Center of competence for new materials, advanced technologies and energetics | |
| Program: | EU Structural Funds Research & Development |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Duration: | 1.8.2011 – 30.11.2015 |
| ReSwitch – Štruktúry kov-oxid-kov pre nanorozmerné pamäťové bunky na báze odporového prepínania | |
| Metal-oxide-metal structures for resistive switching based memory cells | |
| Program: | SRDA |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Duration: | 1.5.2011 – 30.4.2014 |
| Tenké vrstvy oxidov a ich uplatnenie v pokročilých elektronických súčiastkach | |
| Thin oxide films and their application in advanced electronic devices | |
| Program: | VEGA |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Duration: | 1.1.2011 – 31.12.2013 |
| ENERGOZ – Efektívne riadenie výroby a spotreby energie z obnoviteľných zdrojov | |
| Effective control of production and consumption of energy from renewable sources | |
| Program: | EU Structural Funds Research & Development |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Project webpage: | http://tisav.choma.sk/index.php?projekt=energoz&card=energoz |
| Duration: | 1.4.2010 – 1.3.2013 |
| CENTE II – Budovanie Centra Excelentnosti pre Nové Technológie v Elektrotechnike – II. etapa | |
| Center of Excellence for New Technologies in Electrical Engineering II. | |
| Program: | EU Structural Funds Research & Development |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Duration: | 1.3.2010 – 28.2.2013 |
| Vývoj univerzálnej HD video platformy pre aplikáciu v broadcastingu, vzdelávaní a výskume | |
| Development of HD video universal platform for application in broadcasting, education and research (HD Video) | |
| Program: | EU Structural Funds Research & Development |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Project webpage: | http://www.monogram.sk/projekty0.html |
| Duration: | 1.2.2010 – 31.1.2013 |
| CEKOODUV – Centrum komercializácie poznatkov a ochrany duševného vlastníctva Slovenskej akadémie vied | |
| Centre of knowledge commercialization and intellectual property rights management of the Slovak Academy of Sciences | |
| Program: | EU Structural Funds Research & Development |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Project webpage: | http://tisav.choma.sk/index.php?projekt=ceko |
| Duration: | 1.10.2009 – 31.3.2012 |
| Štruktúry kov-izolant-kov pre nanorozmerné pamäte typu DRAM | |
| Structure metal-insulator-metal for nanoscale DRAM memories | |
| Program: | SRDA |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Duration: | 1.9.2008 – 30.6.2011 |
| CENTE – Centrum excelentnosti pre nové technológie v elektrotechnike | |
| Center of Excellence for New Technologies in Electrical Engineering | |
| Program: | EU Structural Funds Research & Development |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Project webpage: | http://www.elu.sav.sk/cente/intro_sk.html |
| Duration: | 15.5.2009 – 14.5.2011 |
| Mikroštruktúra veľmi tenkých vrstiev pre modernú mikroelektroniku | |
| Microstructure of very thin films for advanced microelectronics | |
| Program: | VEGA |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Duration: | 1.1.2008 – 31.12.2010 |
| MORGAN – Materiály pre robustný gálium nitrid | |
| Materials for Robust Gallium Nitride | |
| Program: | Podpora MVTS z prostriedkov SAV |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Duration: | 16.7.2009 – 31.12.2009 |
| Tenké oxidové vrstvy pre GaN heteroštruktúry | |
| Thin oxide films for GaN heterostructures | |
| Program: | SRDA |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Duration: | 1.3.2007 – 30.11.2008 |
| MatNet – Vybudovanie výskumno-vývojovej a inovačnej siete pre oblasť materiálov a technológií ich spájania | |
| Creation of network for innovations, research & development in the field of advanced materials and technologies of their joining | |
| Program: | Európsky sociálny fond /ESF/ (MŠ SR, MPSVR SR) |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Project webpage: | http://www.matnet.sav.sk/ |
| Duration: | 1.4.2006 – 30.9.2008 |
| Tenké vrstvy oxidov pre pokročilé MOS štruktúry | |
| – | |
| Program: | SRDA |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Duration: | 1.2.2005 – 31.12.2007 |
| THIOX – Tenké vrstvy pre nové súčiastky na báze oxidov | |
| Thin oxide films for novel oxide devices | |
| Program: | Other projects |
| Project leader: | Ing. Fröhlich Karol, DrSc. |
| Duration: | 1.1.2003 – 31.12.2007 |