Topic: Study of transport properties of Ga2O3 transistors for applications in kV range
Supervisor: : Ing. M. Ťapajna, PhD. (Department of III-V Semiconductors)
Co-advisor: Ing. Ondrej Pohorelec, PhD.
Description: Gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG, Eg=4.8–5.3 eV) semiconductor material, recently recognized as a highly promising for high-voltage (HV) and high-power applications. This material can enable solid-state diodes and transistors with unprecedented blocking voltages, far exceeding the capabilities of mature technologies based on main competing compound semiconductors, i.e. GaN and SiC. Ga2O3 devices can thus enable development of systems for transportation utilising electric drive (cars, trains, ships, aircrafts) or transformation for high-voltage DC power distribution networks. Currently, great research effort is focused on growth of Ga2O3 and development of related electronic devices for power applications.
The aim of the work will be the study and detailed characterization of the electrical breakdown of transistors and diodes based on heteroepitaxial Ga2O3 layers prepared at the Institute of Electrical Engineering SAS using chemical vapor deposition methods. The work will be focused on identification of the electrical breakdown modes and description of the breakdown mechanisms in order to propose an optimal design for increasing the blocking voltage of the studied devices. In addition, standard reliability tests (HTRB, HTGB) of the prepared devices will be carried out in order to identify the parasitic instabilities of the electrical device parameters. These results will contribute to the understanding of the specific degradation modes in Ga2O3 power devices and their mitigation.