Topic: Growth and properties of III-N quantum structures for fast electronic
Supervisor: : Ing. R. Stoklas, PhD. (Department of III-V Semiconductors)
Co-advisors: Ing. Michal Blaho, PhD, Ing. J. Kuzmík, DrSc.
Description: Topic of the work deals with the growth and investigation of epitaxial III-N quantum structures prepared by metal-organic chemical-vapor deposition (MOCVD). GaN, as a constituting member of III-N family, is a most dynamically developed material in semiconductor industry marked by a Nobel Prize for invention of blue/white LEDs. III-N materials are currently attracting a lot of interest also for applications in power, high frequency, and automotive electronics.
Compound semiconductors based on III-N materials (GaN, AlN, InN) and its combinations facilitate preparation of countless heterostructures showing quantum effects. In particular, 2-dimensional charge carrier gas with high density and mobility can be created; both these properties represent crucial aspects for future electronic devices. Similarly, InN represents the material with the highest electron drift velocity among all common semiconductors. Work will be focused on mastering the growth at the state-of-the-art AIXTRON MOCVD system. Main emphasize will be given to heterostructure quantum wells containing In(Al)N for future ultra-fast transistors, as well as preparation of the channel layer based on InN. Material study will include several techniques for structural, electrical and optical investigation. PhD study will be accomplished by processing and demonstration of test structures and innovative electronic devices.