Projects

International projects

Current

AGAMI_EURIGAMI - European Innovative GaN Advanced Microwave Integration
Duration:	15. 12. 2022 - 14. 12. 2026
Evidence number:	101102983
Program:	EDF
Project leader:	Ing. Kuzmík Ján, DrSc.
Partner countries:	Belgium, Croatia, Finland, France, Germany, Greece, Italy, Lithuania, Netherlands, Spain, Sweden
Project website:	https://ec.europa.eu/info/funding-tenders/opportunities/portal/screen/opportunities/projects-details/44181033/101102983/EDF

NANOMAT - Heterogeneous Material and Technological Platform for a New Domain of Power Nanoelectronics
Duration:	1. 12. 2022 - 30. 11. 2025
Evidence number:	Horizont Európa-101091433
Program:	Horizont Európa
Project leader:	Ing. Kuzmík Ján, DrSc.
Partner countries:	Germany, Greece, Italy, Romania, Spain, Sweden, United Kingdom
Project website:	https://doi.org/10.3030/101091433

European Network for Innovative and Advanced Epitaxy
Duration:	1. 11. 2021 - 30. 10. 2025
Evidence number:	CA20116
Program:	COST
Project leader:	Ing. Kuzmík Ján, DrSc.
Partner countries:	Austria, Belgium, Bosnia and Herzegovina, Bulgaria, Croatia, Cyprus, Czech Republic, Denmark, Estonia, Finland, Germany, Greece, Hungary, Ireland, Israel, Italy, Latvia, Lithuania, Luxembourg, Moldova, Netherlands, Norway, Poland, Portugal, Romania, Serbia, Spain, Sweden, Switzerland, Turkey, United Kingdom
Project website:	https://www.cost.eu/actions/CA20116/#tabs+Name:Description

CUBES - Central-European (Ultra)Wide Bandgap Expertise Cluster
Duration:	1. 1. 2024 - 1. 6. 2025
Evidence number:	22320095
Program:	International Visegrad Fund (IVF)
Project leader:	Ing. Gucmann Filip, PhD.
Partner countries:	Hungary, Poland

Finished

SAFEMOST - Highly Safe GaN Metal-Oxide-Semiconductor Transistor Switch
Duration:	1. 10. 2015 - 30. 3. 2019
Evidence number:
Program:	International Visegrad Fund (IVF)
Project leader:	Ing. Kuzmík Ján, DrSc.
Partner countries:	Hungary, Japan, Poland
Project website:	http://www.safemost.sav.sk/

National projects

Current

InN: Breaking the Limits of Solid-State Electronics
Duration:	1. 11. 2023 - 30. 6. 2026
Evidence number:	09I01-03-V04 -00019
Program:	Plán obnovy EÚ
Project leader:	Ing. Kuzmík Ján, DrSc.
Annotation:	The InBreak project follows Horizon 2020 project NANOMAT. NANOMAT aims to inaugurate and establish a new domain of "Flexible (Conformal) Power RF Nanoelectronics" through an ambitious innovative heterogeneous technology platform including organic-based electronics and heat sinks, semiconductor monolithic wide band gap microwave integrated circuits (MMICs), radio frequency microelectromechanical actuators (RF MEMS) and acoustic sensors. In the InBreak project, InN as a unique semiconductor material will be grown as strained channel on a tailored N-polarity InAlN buffer layer. Conventional GaN buffer will be replaced by InAlN with an In molar fraction of 0.7-0.9. We expect that this approach, combined with a thin GaN interlayer between the InAlN barrier and the InN channel, will lead to excellent high-density 2-dimensional electron gas (2DEG) confinement in the epi-structures. Completion of the project will enable HEMTs higher working frequencies and the potential of approaching 6G technology in the (sub)THz band.

Nanoelsen - Nanostructured thin-film materials characterized by weak binding interactions for electronic and sensoric applications
Duration:	1. 7. 2022 - 30. 6. 2026
Evidence number:	APVV-21-0278
Program:	APVV
Project leader:	RNDr. Gregušová Dagmar, DrSc.
SAS cosolvers:	Ing. Blaho Michal, PhD., RNDr. Gregušová Dagmar, DrSc., RNDr. Haščík Štefan, PhD., Mgr. Hrdá Jana, PhD., Ing. Pohorelec Ondrej, PhD., RNDr. Pribusová Slušná Lenka, PhD., Mgr. Sojková Michaela, PhD., Mgr. Vojteková Tatiana
Annotation:	The proposed project is focused on the basic research of the preparation processes and properties ofsemiconducting sulfides of transition metals such as Mo, W and Ni and selected combinations with their oxides inthe form of mixed sulfides and oxides, as well as the possibilities of their doping with noble metals (Pt, Au) for usein gas sensors as well as in supercapacitors. We also anticipate full utilization of semiconductormicroelectronic and micromechanical techniques and micro / nanotechnologies, which can significantly contributeto qualitatively improved detection properties, low operating power consumption of gas sensors as well asincreased energy efficiency and supercapacitor lifetime.

Lubrication challenge for ultra-thin advanced 2D-TMDC in extreme conditions
Duration:	1. 7. 2024 - 30. 6. 2026
Evidence number:	09I03-03-V04-00709
Program:	Plán obnovy EÚ
Project leader:	Mgr. Kozak Andrii, PhD.
Annotation:	The friction, stiction, adhesion, and wear are significantly influenced not only by the chemical and physical properties of the objects in relative motion but also by their shape, dimensions of the interacted area, and environment. Tightening the moving objects to the nanoscale make surface forces dominate the tribological behaviour, and the appearance of additional energy dissipation mechanisms can be observed, which can be critical for the lifetime and reliability of the devices. In turn, the environment renders multi-varied effects on the sliding interface, promoting the structural superlubricity or opposite extremally high friction caused by atomic interactions. The aim of this project is fabrication of low-friction wear-protected surfaces coating system applicable to advanced applications at the nano- and macroscale. Ultrathin coating of new 2D TMDs (PtSe2, MoSe2) will be formed with the aim to investigate their structure evolution during sliding in ambient air, vacuum environment as well as at elevated temperatures. The friction and wear processes on the surface of 2D materials and their interfaces will be systematically analysed by means of nanoscale and macroscale friction analysis. The gained knowledge will be then used to develop new ultrathin materials as a low-friction coating for different type of metal surfaces.

Transit2D - Transistors based on 2D Metal Chalcogenides Grown via Thermally Assisted Conversion
Duration:	1. 7. 2022 - 30. 6. 2026
Evidence number:	APVV-21-0231
Program:	APVV
Project leader:	Ing. Ťapajna Milan, PhD.
SAS cosolvers:	Mgr. Egyenes Fridrich, PhD., Ing. Eliáš Peter, Ing. Fedor Ján, PhD, Mgr. Feilhauer Juraj, PhD., RNDr. Gregušová Dagmar, DrSc., Ing. Gucmann Filip, PhD., Mgr. Hrdá Jana, PhD., Ing. Hrubišák Fedor, Ing. Hudec Boris, PhD., Dr. rer. nat. Hulman Martin, RNDr. Hušeková Kristína, Mgr. Hutár Peter, PhD., MSc. Keshtar Javad, Mgr. Laurenčíková Agáta, PhD., Ing. Pohorelec Ondrej, PhD., RNDr. Pribusová Slušná Lenka, PhD., Mgr. Sojková Michaela, PhD., Ing. Stoklas Roman, PhD., Ing. Ťapajna Milan, PhD., Mgr. Vojteková Tatiana
Annotation:	2D materials can form one-atom-thick sheets with extraordinary properties. One of the most promising classes of2D materials is the transition metal dichalcogenides (TMDs). The transition from an indirect to a direct bandgap,when the bulk materials is thinned down to a monolayer, results in unique electrical and optical properties of 2DTMDs. Post-transition metal chalcogenides (PTMCs) represents another interesting group of 2D materials. Thesematerials have wide band gap and, depending on the structure of the material, show anisotropic electrical andoptical properties. The aim of this project is the fabrication of field-effect transistors with metal-oxide-semiconductorgate (MOSFETs) based on selected TMDs and PTMCs compounds and detail analysis of their transport properties.We will focus on large-area few-layer PtSe2 and GaS/GaSe films grown by thermal assisted conversion, i.e.sulfurization and selenization. Based on the existing experiences, structural, chemical and electrical properties ofhorizontally-aligned PtSe2 films prepared by selenization will be optimized, targeting mobilities similar to thoseprepared by mechanical exfoliation. Then, MOSFET technology using both, top-gate as well as bottom-gateapproach will be developed and optimized. Atomic layer deposition and metal-oxide chemical vapor deposition(MOCVD) will be employed for gate oxide growth. GaS/GaSe few-layer films will be prepared by chalcogenization

Research of fabrication technology for low-cost oxide-based semiconductorelectronic devices for IoT and sensor applications
Duration:	1. 1. 2024 - 30. 6. 2026
Evidence number:	09I05-03-V02-00030
Program:	Plán obnovy EÚ
Project leader:	Ing. Ťapajna Milan, PhD.

Critical aspects of the growth for a new generation of III-N devices
Duration:	1. 1. 2022 - 31. 12. 2025
Evidence number:	2/0005/22
Program:	VEGA
Project leader:	Ing. Kuzmík Ján, DrSc.
SAS cosolvers:	Ing. Blaho Michal, PhD., doc. RNDr. Dobročka Edmund, CSc., Ing. Eliáš Peter, Ing. Hasenöhrl Stanislav, RNDr. Haščík Štefan, PhD., RNDr. Kučera Michal, PhD, Mgr. Laurenčíková Agáta, PhD., Mgr. Nádaždy Peter, PhD., Ing. Pohorelec Ondrej, PhD., Ing. Rosová Alica, CSc., Ing. Stoklas Roman, PhD., Mgr. Šichman Peter
Annotation:	Gallium Nitride (GaN) compounds are investigated for a new generation of high-frequency transistors, powerelectronics and post CMOS logic circuits. Flexibility in this area is given by a miscibility of In and Al with GaN,providing a wide spectra of semiconductors with a possibility of setting an energy band-gap from 0.65 eV to 6.2eV, with countless combinations of heterostructures. Basis of our project is given by study and mastering of thegrowth of unique material concepts using a metal-organic chemical-vapour deposition (MOCVD) technique. Weaim to investigate: i/ transistors with N-polar InN channel, ii/ MOS contacts on N-polar heterostructures, iii/transistors with a hole conduction, as well as iv/ vertical structures on GaN substrate. Part of the project will berepresented by characterisation activities, like investigation of the electron transport properties in N-polar InN, in MOS structures, study on the 2-dimensional hole gas as well as transient effect in C-doped vertical transistors.

Impact of substrate material on positive bias temperature instabilities in enhancement mode Al2O3/InAlN/GaN MOSHEMTs
Duration:	1. 7. 2024 - 31. 12. 2025
Evidence number:	24183001
Program:	PostdokGrant
Project leader:	Ing. Pohorelec Ondrej, PhD.

Modern electronic devices based on ultrawide bandgap semiconducting Ga2O3 for future high-voltage applications
Duration:	1. 7. 2021 - 30. 6. 2025
Evidence number:	20-0220
Program:	APVV
Project leader:	Ing. Gucmann Filip, PhD.
SAS cosolvers:	doc. RNDr. Dobročka Edmund, CSc., Mgr. Egyenes Fridrich, PhD., Ing. Fröhlich Karol, DrSc., RNDr. Gregušová Dagmar, DrSc., Ing. Hrubišák Fedor, RNDr. Hušeková Kristína, MTech. Chouhan Hemendra, MSc. Keshtar Javad, Mgr. Nádaždy Peter, PhD., Ing. Rosová Alica, CSc., Ing. Ťapajna Milan, PhD.
Annotation:	Wide bandgap (WBG) semiconductor devices represent one of the key technologies in development of high power and high frequency systems for electric power conversion and telecommunications owing to their fundamental benefit of higher breakdown electric fields, in some cases increased electron mobility, and possibility to form heterostructures and 2D electron gas. GaN and SiC, two typical WBG examples also benefit from moderate values of thermal conductivity allowing for more efficient sinking of generated waste heat, lower channel temperatures, and enhanced device reliability. New emerging semiconductor materials with even higher bandgap energies (Eg>3.4eV) referred to as ultrawide bandgap materials allow for further improvements in high power and high voltage handling solid-state electronic devices. Currently, semiconducting gallium oxide (Ga2O3) is under extensive study and expected to provide base material for rectifying Schottky -gate diodes and field-effect transistors for applications operating in kV range thanks to its good scalability, relatively simple synthesis, availability of native melt-grown substrates, and wide range of achievable n-type doping levels. The main aim of the proposed project constitutes material research and development of technology for epitaxial growth of epitaxial α -,β-, and ε-Ga2O3 layers and for processing of basic unipolar and bipolar electronic devices based on prepared Ga2O3 layers for future high voltage/power applications. Ga2O3 layers will be grown using liquid injection metalorganic chemical vapour deposition on sapphire, and higher thermal conductivity SiC substrates. We also aim to prepare Schottky diodes, FETs, and all-oxide Ga2O3 PN diodes using naturally p-type oxides (e.g. NiO, In2O3, CuO2). Comprehensive structural, electrical, optical, and thermal study of prepared epitaxial layers and devices will be conducted and numerous original, high-impact results are expected to be obtained.

NanoMemb-RF - Advanced GaAs-based nanomembrane heterostructures for highperformance RF devices
Duration:	1. 7. 2022 - 30. 6. 2025
Evidence number:	APVV-21-0365
Program:	APVV
Project leader:	RNDr. Gregušová Dagmar, DrSc.
SAS cosolvers:	Ing. Blaho Michal, PhD., Mgr. Egyenes Fridrich, PhD., Ing. Eliáš Peter, Ing. Fedor Ján, PhD, RNDr. Gregušová Dagmar, DrSc., Ing. Gucmann Filip, PhD., RNDr. Haščík Štefan, PhD., Mgr. Hrdá Jana, PhD., Ing. Hrubišák Fedor, MSc. Keshtar Javad, Ing. Pohorelec Ondrej, PhD., RNDr. Pribusová Slušná Lenka, PhD., Ing. Stoklas Roman, PhD., Ing. Ťapajna Milan, PhD.
Annotation:	The main aim of the proposed project is to expand the basic knowledge and to master the fabrication technology ofthe advanced nanomembrane AlGaAs/GaAs heterojunction devices for high-performance RF applications.Insufficient removal of the waste heat in electronic devices due to the Joule losses leading to overheating and earlydevice failure often requires foreign, high thermal conductivity substrates to be employed. As opposed to themainstream research of the GaN-based electronic devices prepared directly on sapphire or SiC, proposed GaAsbased devices will be fabricated upon self-supporting heterostructure nanomembranes transferred onto varioussubstrates. It is very timely, original, and desirable approach to extend the utilization of the GaAs-based devicesmaterial potential, as demonstrated by our preliminary results.

PEGANEL - p-GaN electronics for energy savings and beyond-CMOS circuits
Duration:	1. 7. 2022 - 30. 6. 2025
Evidence number:	APVV-21-0008
Program:	APVV
Project leader:	Ing. Kuzmík Ján, DrSc.
SAS cosolvers:	Ing. Blaho Michal, PhD., doc. RNDr. Dobročka Edmund, CSc., Mgr. Egyenes Fridrich, PhD., Ing. Eliáš Peter, RNDr. Gregušová Dagmar, DrSc., Ing. Gucmann Filip, PhD., Ing. Hasenöhrl Stanislav, RNDr. Haščík Štefan, PhD., Ing. Hudec Boris, PhD., RNDr. Kučera Michal, PhD, Ing. Kuzmík Ján, DrSc., Mgr. Laurenčíková Agáta, PhD., Mgr. Nádaždy Peter, PhD., Ing. Pohorelec Ondrej, PhD., Ing. Rosová Alica, CSc., Ing. Stoklas Roman, PhD., Mgr. Šichman Peter, Ing. Ťapajna Milan, PhD.
Annotation:	III-N semiconductors are probably the most versatile and promising semiconductor family, consisted of artificialcompounds made of GaN, AlN and InN. In the project proposal we describe new technological concepts withsufficient freedom to solve main problems of the III-N post-beyond CMOS age: in transistors co-existence of theparasitic n-channel along with the p-channel, as well as low hole gas density and mobility. Similarly, we aim todemonstrate scalable threshold voltage in the enhancement-mode p-doped power transistors, which are needed bythe industry for efficient, energy-saving convertors. In these aspects, our laboratories already showed verypromising results proving the competence to reach described targets. If successfully implemented, results of ourproposed project would represent a significant step forward not only from the world-wide point of view but is also infull agreement with the RIS3 SK (perspective areas of specialization of the Slovak economy), particularly in thefield of semiconductors for electric cars of automotive industry, as well as in information and communicationsciences.

Finished

Electronic and optoelectronic devices based on ultra-wide bandgap Ga2O3 semiconductor
Duration:	1. 1. 2021 - 31. 12. 2024
Evidence number:	2/0100/21
Program:	VEGA
Project leader:	Ing. Ťapajna Milan, PhD.
SAS cosolvers:	Mgr. Egyenes Fridrich, PhD., Ing. Fröhlich Karol, DrSc., Ing. Gucmann Filip, PhD., RNDr. Hušeková Kristína
Annotation:	Recently, great research effort has been devoted to ultra-wide bandgap semiconductors for the preparation ofhigh-performance electronic devices operating in the electric fields up to tens of kV and UV photodetectors. Thisproject aims the research of the growth of epitaxial layers and electronic as well as optoelectronic devices basedon Ga2O3. Based on preliminary results, we will investigate the growth of rhombohedral Ga2O3 with the highestbandgap energy. Epitaxial layers will be prepared by metal-organic chemical vapor deposition using liquid phaseprecursor injection. The layers will be used for preparation and research of electronic devices with a focus onSchottky diodes and switching MOSFET transistors. We will study the transport and thermal properties, parasiticeffects and breakdown mechanisms of the developed electronic devices as well as electro-optical properties ofp-n heterojunctions. We will also target exploratory research for improvements in thermal management of thepower transistors.

Photonic Lab-on-a-Chip: investigation and development of plasmonic sensor platform for immediate detection of composites in solutions
Duration:	1. 7. 2021 - 31. 12. 2024
Evidence number:	20-0437
Program:	APVV
Project leader:	doc. Ing. Novák Jozef, DrSc.

Nano-optical probes and sensors integrated on optical fiber
Duration:	1. 8. 2021 - 31. 12. 2024
Evidence number:	20-0264
Program:	APVV
Project leader:	doc. Ing. Novák Jozef, DrSc.

Contact engineering for advanced materials and devices
Duration:	1. 1. 2021 - 31. 12. 2024
Evidence number:	2/0068/21
Program:	VEGA
Project leader:	RNDr. Gregušová Dagmar, DrSc.
SAS cosolvers:	Ing. Blaho Michal, PhD., Ing. Eliáš Peter, Ing. Fedor Ján, PhD, Ing. Gucmann Filip, PhD., RNDr. Kučera Michal, PhD, Ing. Kúdela Róbert, CSc., Mgr. Laurenčíková Agáta, PhD., doc. Ing. Novák Jozef, DrSc.
Annotation:	Intensive research has so far been done into metallic contacts to semiconductors. However, new types ofconductivity, materials and devices, and new contact formation mechanisms require new insights into theformation of such contacts. Our aim is to determine the processes and physics behind metallization schemes fornormally-off InAlN-based heterostructure high electron mobility transistors with hole conductivity. InAlN with ahigh molar fraction of InN will be doped with Mg, and the ohmic and Schottky metallic stacks will be optimized. New transition metal dichalkogenide materials (TMDCs) are very promising for new device applications. However,metallization schemes for TMDCs are very challenging. TMDCs exhibit varying band gap widths in dependenceof their thickness. Our aim is to study metallization schemes for TMDCs, their topology, and explain differences between ex-foliated and grown samples, and differences between back-gated and top-gated devices in correlation with basic TMDCs properties.

Thermal transport properties of perspective future semiconductor materials and interfaces
Duration:	1. 1. 2022 - 31. 12. 2023
Evidence number:	SK-CN-21-0013
Program:	APVV
Project leader:	Ing. Gucmann Filip, PhD.

Development of silicon carbide and aluminum nitride interlayers for pn heterostructure based on gallium oxide and boron-doped nanodiamonds
Duration:	1. 1. 2023 - 31. 12. 2023
Evidence number:	APP0373
Program:	DoktoGrant
Project leader:	MSc. Keshtar Javad

Improvement of crystal quality of β-Ga2O3 grown on SiC using LI-MOCVD method
Duration:	1. 1. 2023 - 31. 12. 2023
Evidence number:	APP0424
Program:	DoktoGrant
Project leader:	Ing. Hrubišák Fedor

GaN-based heterostructure as a promising UV sensor for space application
Duration:	1. 1. 2019 - 31. 12. 2022
Evidence number:	2/0114/19
Program:	VEGA
Project leader:	Ing. Stoklas Roman, PhD.

Vertical GaN MOSFET for power switching applications
Duration:	1. 7. 2019 - 30. 6. 2022
Evidence number:	18-0054
Program:	APVV
Project leader:	Ing. Kuzmík Ján, DrSc.
Annotation:	Owing the ever growing demand for the energy volume, energy attainability represents one of the most important issues of today’s society. However, there are great reserves in the energy savings available. According to available analyses, more than 10% of all electricity is ultimately lost in the form of conversion losses. Clearly, even partial improvement in the conversion efficiency can have strong economic impact. As the most of energy is now used for the electronics, corresponding scale of the losses forms at the end-user side, where the electricity is converted into a form suitable for a particular appliance. The main effort towards the conversion efficiency improvements therefore targets the area of power AC/DC and DC/DC converters for consumer and industrial electronics. Significant improvement in the conversion efficiency can be achieved by using GaN based transistors, as they are capable to operate at much higher frequencies with almost three times lower switching losses compared to Si devices.The main goal of the project is the research and development of vertical GaN MOSFET without using p-doping, and gaining the original knowledge on electrical and physical properties of the developed devices. From the quantitative point of view, our proof-of-concept device will target RON<2 mOhm/cm2 and VBD>600 V. An original feature of the proposed concept is utilization of the semi-insulating (SI) GaN as a channel layer (instead of p-type GaN), which blocks the current flow through the transistor at zero gate voltage. To open the transistor channel, positive voltage applied to the gate will be needed to induce down bend-bending in the SI GaN, allowing electron injection from the source to the drift region (along the side walls of SI GaN). This concept therefore represents a unipolar enhancement-mode transistor, while drift region is formed of un-doped GaN with extremely low density of dislocation grown directly on GaN substrate.

Advanced III-N devices for energy and information transfer
Duration:	1. 1. 2018 - 31. 12. 2021
Evidence number:	2/0012/18
Program:	VEGA
Project leader:	Ing. Kuzmík Ján, DrSc.
Annotation:	Gallium Nitride (GaN) and related compounds commonly referred as III-N have significantly more flexible energy gap, higher breakdown electric field intensity, a large spontaneous polarization, high thermal and radiation resistance, but also the high mobility of electrons. Therefore there is an effort to develop III-N semiconductor devices, mainly HFETs, which have the potential to gradually replace Si, Si/SiGe, GaAs and InP devices in microwave and power applications, switches, switching amplifiers, logic circuits and mixed-signal electronics. Consequently, in this manner we aspire to develop HFETs with InN channel for ultra-fast information transfer, advanced GaN-based transistor switches for energy conversion, technology of GaN-based fast mixed-signal electronics, and GaN-based UV sensors for space applications.

Systematic investigation of Ohmic contacts for devices based on rhombohedral gallium oxide (alfa-Ga2O3)
Duration:	1. 1. 2021 - 31. 12. 2021
Evidence number:	APP0234
Program:	DoktoGrant
Project leader:	Mgr. Egyenes Fridrich, PhD.

SENAD - Semiconductor nanomembranes for hybrid devices
Duration:	1. 7. 2016 - 31. 12. 2019
Evidence number:	15-0243
Program:	APVV
Project leader:	Ing. Kúdela Róbert, CSc.
Annotation:	The project deals with GaAs and GaN-based nanomembranes, including their preparation, study of physical properties, application in new hybrid devices that cannot be effectively prepared with present monolithic technologies. A "GaAs-based (or GaN-based) nanomembrane" can be defined as a monocrystalline structure that was released from its original substrate, is either free-standing or bonded to a host substrate, and its thickness is up to hundreds nanometers and lateral dimensions are more than two orders magnitude larger. Thin organic films, which can modify properties of nanomembranes, will be deposited on some samples.

MioGaN - GaN Monolithic Integrated Circuits
Duration:	1. 7. 2016 - 30. 6. 2019
Evidence number:	15-0673
Program:	APVV
Project leader:	Ing. Kuzmík Ján, DrSc.

Transistors with InN channel for THz microwaves and logic
Duration:	1. 7. 2016 - 30. 6. 2019
Evidence number:	15-0031
Program:	APVV
Project leader:	Ing. Kuzmík Ján, DrSc.

Universal nanorod platform for interdisciplinary applications
Duration:	1. 7. 2015 - 31. 12. 2018
Evidence number:	14-0297
Program:	APVV
Project leader:	doc. Ing. Novák Jozef, DrSc.
Other cosolvers:	FEI STU