|
Institution |
Activity |
|---|---|
|
Ferdinand-Braun-Institute, Berlin (Dr. J. Würfl) |
Normally-off GaN HEMTs for inverters |
|
Inst. of Quantum Electronics and Photonics, EPFL Lausanne (Prof. N. Grandjean, Dr. J.-F. Carlin) |
Technology of InAlN/GaN HEMTs |
|
Research Center for Integrated Quantum Electronics, Sapporo, Hokkaido University (Prof. T. Hashizume) |
Highly safe normally-off GaN HEMTs |
|
Research Center Jülich (Dr. M. Mikulics) |
III-V nanostructures |
|
University of Crete (Prof. A. Georgakilas) |
InN-channel HEMTs |
|
Epigan NV (Dr. M. Germain) |
MOCVD of GaN heterostructures |
|
Institute of Physics AS CR, v.v.i. (Prof. E. Hulicius) |
GaN MOCVD |
|
Wroclaw University of Technology, Wroclaw (Prof. M. Tlaczala) |
III-V MOCVD |
|
FEEIT STU Bratislava (Prof. A. Šatka) |
GaN-based mixed-signal electronics |
