Article list
Time: February 26, 2026 on 10,00 a.m. Place: ElÚ SAV, v.v.i. (meeting room 101) Program:
The Selection Committee for the election of the Director of the Institute of Electrical Engineering Slovak Academy of Sciences (IEE SAS) and the Scientific Board of IEE SAS invite you all to the presentation of the candidate for the position of Director of the IEE SAS – Ing. Milan Ťapajna, PhD., which will take place on November…
The Institute of Electrical Engineering, Slovak Academy of Sciences (IEE SAS, v. v. i.) cordially invites you to an IEEE Distinguished Lecture by Prof. Dr. Tuo-Hung (Alex) Hou from the National Yang Ming Chiao Tung University (NYCU), Taiwan Date: November 24, 2025Time: 9:00 a.m.Venue: Conference Room 101, Institute of Electrical Engineering SAS,Dúbravská cesta 9, Bratislava…
Highly Si-doped gallium nitride (n++ GaN) layers play a key role in developing reliable high-electron-mobility transistors (HEMTs) for power and communication electronics. Our researchers from the group of III-V semiconductors investigated their growth using metal-organic chemical vapor deposition (MOCVD) at 800 °C and optimized the silicon precursor flow (SiH₄) to improve both electrical and structural…
Time: October 17, 2025 on 10,00 a.m. Place: ElÚ SAV, v.v.i. (meeting room 101) Program:
Time: October 10, 2025 on 10,00 a.m. Place: ElÚ SAV, v.v.i. (meeting room 101) Program:
Institute of Electrical Engineering invites you to a lecture by Dr. Gábor Méhes (Waseda University, Japan) on 8 October, 2025 at 9:30 a.m. in the IEE SAS Meeting Room 101 at Dúbravská Cesta 9 in Bratislava. Title of the lecture: Advancements in the fields of organic electronics and bioelectronics through research in Japan, Sweden, and the US. Dr. Gábor Méhes is…
Applicant will deal with the growth and processing of epitaxial III-N quantum structures prepared by metal-organic chemical-vapor deposition. Main emphasize will be given to heterostructure quantum wells containing In(Al)N compounds for future ultra-fast transistors, mixed-signal electronics as well as GaN-based vertical switches. Material study will include several techniques for structural, electrical and optical investigations. Finally,…
InN has been recognized as a far-reaching candidate for ultra-high-speed electronics since almost two decades ago. Indeed, very recently these expectations were supported by us extracting the electron drift velocity of 1 ×108 cm/s in 775-nm thick InN, the highest ever reported value in any semiconductor material. We report proof-of-concept N-polar InN/In0.61Al0.39N heterostructures. 20-nm thick…
Institute of Electrical Engineering SAS is opening a technical personnel position from October 2025, specialized on design and preparation of printed circuit boards for memristor arrays. Degree required: Highschool with graduation exam Experience required: min. 3 years in the field Salary based on the law no. 553/2003 Z.z., starting 1200 EUR. Application deadline: 30.9.2025 Contact: Ing….